Infineon IPB120N06NG Optimos power-transistor Datasheet

IPB120N06N G
IPP120N06N G
™
"%&$!"# Power-Transistor
Product Summary
Features
.(
V 9G
O >@50ABAE8
B
2 78=6 2 >=D4@B
4@A 0=3 AG=2 @42 B
858
2 0B
8>=
R + >=< 0F + &
O ' 2 70==4;4=70=2 4< 4=B =>@< 0;;4D4;
I
))&/
D4@A8
>=
X"
/-
I9
6
O R >? 4@0B
8=6 B
4< ? 4@0B
C@4
O D0;0=2 74 @0B
43
O ) 1 5@44 ;403 ? ;0B
8
=6 * >" + 2 >< ? ;8
0=B
O " 0;>64= 5@44 02 2 >@3 8
=6 B
> # Type
#) ) ' ' !
#) ' ' !
Package
E%HD**(%+%)
E%HD*.+%+%*
Marking
)*(C(.C
)*(C(.C
Maximum ratings, 0BT U R C=;4AA >B
74@E8A4 A? 42 8
5843
Parameter
Symbol Conditions
>=B
8=C>CA 3 @08= 2 C@@4=B
I9
T 8 R
/-
T 8
-+
R
)#
) C;A43 3 @08= 2 C@@4=B
I 9$[_W]P
T 8 R
D0;0=2 74 4=4@6G A8
=6;4 ? C;A4
E 6G
I 9 R =G "
*0(
* 4D4@A4 3 8
>3 4 3 v 'Ot
Ov 'Ot
I 9 V 9G - Oi 'Ot T A
T U$XLb R
.
!0B
4 A>C@2 4 D>;B
064
V =G
) >E4@ 3 8AA8? 0B
8>=
P ^Z^
( ? 4@0B
8=6 0=3 AB
>@064 B
4< ? 4@0B
C@4
T U T ]^R
)#
Unit
6
+((
T 8 R
# 2 ;8< 0B
82 2 0B
46>@G #' # * 4D
Value
X@
VI'p]
o*(
I
)-0
J
R
+ 44 586C@4 ? 064
IPB120N06N G
Parameter
IPP120N06N G
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&1-
Thermal characteristics
,74@< 0;@4A8
AB
0=2 4 9
C=2 B
8
>= 2 0A4
R ^S@8
+ & D4@A8>= 3 4D824 >= ) R ^S@6
< 8=8
< 0;5>>B
? @8=B
A'J
2 < * 2 >>;8
=6 0@40*#
%
%
,(
.(
%
%
*&)
+
,
%
(&()
)
%
)
)((
%
)(
)((
Y6
%
1&1
)*
X"
%
1&.
))&/
%
*
%
"
+.
/*
%
G
Electrical characteristics, 0BT U R C=;4AA >B
74@E8A4 A? 42 85843
Static characteristics
@08= A>C@2 4 1@40: 3 >E= D>;B
064
V "7F#9GG V =G
- I 9
<
!0B
4B
7@4A7>;3 D>;B
064
V =G"^S#
V 9G4V =G I 9 T /4@> 60B
4 D>;B
064 3 @08= 2 C@@4=B
I 9GG
V 9G - V =G
T U R
-
V 9G - V =G
T U R
-
!0B
4 A>C@2 4 ;40: 064 2 C@@4=B
I =GG
V =G - V 9G @08= A>C@2 4 >= AB
0B
4 @4A8AB
0=2 4
R 9G"ZY#
V =G
- I 9 -
V =G
- I 9 + & D4@A8
>=
!0B
4 @4A8AB
0=2 4
R=
H\LY]NZYO_N^LYNP
g Q]
*#
4D824 >= < < F < < F < < 4? >FG ) 2 >==42 B
8>= ) 8A D4@B
820;8= AB
8;;08@
* 4D
eV 9Ge5*eI 9eR 9G"ZY#XLb
I 9 *
* E8B
7 2 < >=4 ;0G4@ ? 064 I
p6
T< B
782: 2 >? ? 4@ 0@40 5>@ 3 @08=
IPB120N06N G
Parameter
IPP120N06N G
Values
Symbol Conditions
Unit
min.
typ.
max.
%
).((
*)((
%
,.(
.)(
Dynamic characteristics
#=? CB2 0? 02 8B
0=2 4
C T]]
V =G - V 9G f & " H
-
[<
( CB
? CB2 0? 02 8
B
0=2 4
C Z]]
* 4D4@A4 B
@0=A54@ 2 0? 02 8B
0=2 4
C \]]
%
)*(
)0(
,C@= >= 3 4;0G B
8< 4
t O"ZY#
%
),
*(
* 8A4 B
8
<4
t\
%
*/
,(
,C@= >553 4;0G B
8< 4
t O"ZQQ#
%
+,
-(
tQ
%
*.
+1
!0B
4B
> A>C@2 4 2 70@64
Q R]
%
1
)*
!0B
4 2 70@64 0BB
7@4A7>;3
Q R"^S#
%
-
.
!0B
4B
> 3 @08= 2 70@64
Q RO
%
*)
+*
+ E8B
2 78
=6 2 70@64
Q ]a
%
*.
+0
!0B
4 2 70@64 B
>B
0;
QR
%
,.
.*
!0B
4 ? ;0B
40C D>;B
064
V [WL^PL_
%
-&0
%
( CB
? CB2 70@64
Q Z]]
%
+(
,(
%
%
/-
%
%
+((
%
)
)&+
I
%
,-
.(
Y]
%
.,
0(
Y8
0;;B
8
<4
V 99 - V =G
-
I 9 R = "
Y]
!0B
4 70@R4 70@02 B
4@8
AB
82A+#
V 99 - I 9 V =G B
>
-
V 99 - V =G
-
Y8
I
Reverse Diode
8>3 4 2 >=B
8=>CA 5>@E0@3 2 C@@4=B
8>3 4 ? C;A4 2 C@@4=B
I G$[_W]P
8>3 4 5>@E0@3 D>;B
064
V G9
* 4D4@A4 @42 >D4@G B
8
<4
t \\
* 4D4@A4 @42 >D4@G 2 70@64
Q \\
+#
* 4D
IG
6
T 8 R
V =G - I < T U R
V F - I <4I G
Oi <'Ot TA
+ 44 586C@4 5>@ 60B
4 2 70@64 ? 0@0< 4B
4@ 3 458=8B
8>=
? 064 IPB120N06N G
2 Drain current
P ^Z^4Q"T 8#
I 94Q"T 8 V =G"
180
90
160
80
140
70
120
60
100
50
I D [A]
P tot [W]
1 Power dissipation
80
-
40
60
30
40
20
20
10
0
IPP120N06N G
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94Q"V 9G T 8 R D 4(
Z ^S@84Q"t [#
? 0@0< 4B
4@ t [
? 0@0< 4B
4@ D 4t ['T
103
100
TA
;8< 8B
43 1G >= AB
0B
4
\P]T]^LYNP
(&TA
102
TA
(&*
10
<A
1
Z thJC [K/W]
I D [A]
98
<A
(&)
10
-1
(&((&(*
(&()
10
10-1
10
10-2
-1
10
0
10
1
10
2
V DS [V]
* 4D
A8=6;4 ? C;A4
0
10-5
10-4
10-3
10-2
10-1
100
t p [s]
? 064 IPB120N06N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94Q"V 9G T U R
R 9G"ZY#4Q"I 9 T U R
? 0@0< 4B
4@ V =G
? 0@0< 4B
4@ V =G
IPP120N06N G
30
240
220
-
200
-
180
160
R DS(on) [m ]
I D [A]
140
120
-
20
-
-
100
-
10
-
80
60
-
-
40
-I
20
0
0
0
1
2
3
4
0
5
20
V DS [V]
40
60
80
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94Q"V =G IV 9Ge5*eI 9eR 9G"ZY#XLb
g Q]4Q"I 9 T U R
? 0@0< 4B
4@ T U
160
80
140
120
60
g fs [S]
I D [A]
100
80
40
60
40
20
20
R
R
4
5
0
0
0
1
2
3
6
7
* 4D
0
20
40
I D [A]
V GS [V]
? 064 IPB120N06N G
IPP120N06N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9G"ZY#4Q"T U I 9 V =G
V =G"^S#4Q"T U V =G4V 9G
-
? 0@0< 4B
4@ I 9
35
4
30
3.5
T
3
25
20
V GS(th) [V]
R DS(on) [m ]
T 2.5
15
2
1.5
^c[
10
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
11 Typ. capacitances
C 4Q"V 9G V =G
- f 60
100
140
180
T j [°C]
T j [°C]
12 Forward characteristics of reverse diode
& " H
I <4Q"V G9#
? 0@0< 4B
4@ T U
104
103
10
R 102
8T]]
R
3
I F [A]
C [pF]
8Z]]
101
R 10
8\]]
2
R
10
10-1
101
0
10
20
30
40
50
0
0.5
1
1.5
2
V SD [V]
V DS [V]
* 4D
0
? 064 IPB120N06N G
13 Avalanche characteristics
14 Typ. gate charge
I 6G4Q"t 6I R =G "
V =G4Q"Q RL^P I 9 ? C;A43
? 0@0< 4B
4@ T U"]^L\^#
? 0@0< 4B
4@ V 99
102
IPP120N06N G
12
R
R
-
10
-
10
R
8
V GS [V]
I AV [A]
1
6
4
2
100
0
100
101
102
103
0
10
t AV [µs]
30
40
50
Q gate [nC]
15 Drain-source breakdown voltage
V 7F"9GG#4Q"T U I 9
20
16 Gate charge waveforms
<
75
V =G
Qg
V BR(DSS) [V]
70
65
V R ]"^S#
60
55
Q R "^S#
Q ]a
Q R]
50
-60
-20
20
60
100
140
Q g ate
Q RO
180
T j [°C]
* 4D
? 064 IPB120N06N G
IPP120N06N G
PG-TO-263 (D²-Pak)
* 4D
? 064 IPB120N06N G
IPP120N06N G
PG-TO220-3: Outline
* 4D
? 064 IPB120N06N G
IPP120N06N G
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