AOSMD AO4812 Dual n-channel enhancement mode field effect transistor Datasheet

AO4812
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4812 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters. AO4812 is Pb-free (meets ROHS & Sony
259 specifications). AO4812L is a Green Product
ordering option. AO4812 and AO4812L are
electrically identical.
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 4.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D2
G2
S1
S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
ID
5.8
IDM
30
W
1.44
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
6.9
TA=70°C
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
48
74
35
°C
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
AO4812
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
20
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=6.9A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
0.004
1
10
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=6.9A
µA
100
nA
1.9
3
V
22.5
28
31.3
38
34.5
42
A
15.4
0.76
680
VGS=0V, VDS=15V, f=1MHz
Units
V
5
VGS=4.5V, ID=5.0A
IS
Max
TJ=55°C
VGS=10V, ID=6.9A
RDS(ON)
Typ
mΩ
mΩ
S
1
V
3
A
820
pF
102
pF
77
pF
3
3.6
Ω
13.84
17
nC
6.74
8.1
nC
Qgs
Gate Source Charge
1.82
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
4.6
7
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
ns
4.1
6.2
ns
20.6
30
ns
5.2
7.5
ns
IF=6.9A, dI/dt=100A/µs
16.5
20
Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
7.8
10
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
6V
5V
4.5V
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
8
10
125°C
4
VGS=3V
5
25°C
0
0
0
1
2
3
4
0
5
0.5
60
2
2.5
3
3.5
4
4.5
Normalized On-Resistance
1.6
50
RDS(ON) (mΩ)
1.5
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
40
30
20
VGS=10V
1.5
VGS=10V
ID=5A
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
70
60
1.0E+00
ID=5A
50
IS Amps
RDS(ON) (mΩ)
1
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
0.0
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=6.9A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
Crss
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
ID (Amps)
20
25
30
TJ(Max)=150°C
TA=25°C
30
100µs
10µs
10ms
0.1s
1
15
40
Power W
1ms
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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