AO4812 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812 is Pb-free (meets ROHS & Sony 259 specifications). AO4812L is a Green Product ordering option. AO4812 and AO4812L are electrically identical. VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V ID 5.8 IDM 30 W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6.9 TA=70°C TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4812 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=6.9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 0.004 1 10 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A µA 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 42 A 15.4 0.76 680 VGS=0V, VDS=15V, f=1MHz Units V 5 VGS=4.5V, ID=5.0A IS Max TJ=55°C VGS=10V, ID=6.9A RDS(ON) Typ mΩ mΩ S 1 V 3 A 820 pF 102 pF 77 pF 3 3.6 Ω 13.84 17 nC 6.74 8.1 nC Qgs Gate Source Charge 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 7 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω ns 4.1 6.2 ns 20.6 30 ns 5.2 7.5 ns IF=6.9A, dI/dt=100A/µs 16.5 20 Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 10 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 6V 5V 4.5V VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 10 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.6 50 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 1.5 VGS=10V ID=5A 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 70 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 0.0 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 ID (Amps) 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 10µs 10ms 0.1s 1 15 40 Power W 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000