isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 13 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ MAX UNIT 0.83 ℃/W 30 ℃/W ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-A Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF450 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN 500 V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance TYP MAX UNIT V 2 4 V VGS= 10V; ID= 7.2A 0.4 Ω ±100 nA IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 13A; VGS= 0 1.4 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 1800 pF 400 pF 100 pF ·SWITCHING CHARACTERISTICS (TC=25℃) PARAMETER TYP MAX UNIT 20 27 ns 40 66 ns Turn-off Delay Time 72 100 ns Fall Time 35 60 ns SYMBOL Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time isc website：www.iscsemi.cn PDF pdfFactory Pro CONDITIONS VDD=250V,ID=13A RG=6.2Ω 2 MIN isc & iscsemi is registered trademark www.fineprint.cn