2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features http://onsemi.com 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS − 115, 180 WATTS • High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* PNP Symbol Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Collector−Base Voltage 2N3055AG MJ15015G, MJ15016G VCBO Collector−Emitter Voltage Base Reversed Biased 2N3055AG MJ15015G, MJ15016G VCEV Emitter−Base Voltage VEBO Value Unit BASE 1 BASE 1 Vdc 60 120 EMITTER 2 EMITTER 2 Vdc CASE 100 200 Vdc 100 200 2 1 7.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7.0 Adc Total Device Dissipation @ TC = 25_C 2N3055AG MJ15015G, MJ15016G Derate above 25_C 2N3055AG MJ15015G, MJ15016G PD Operating and Storage Junction Temperature Range CASE 3 CASE 3 MAXIMUM RATINGS (Note 1) Rating NPN TO−204 (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAMS TJ, Tstg 115 180 W W 0.65 1.03 W/_C W/_C −65 to +200 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A) THERMAL CHARACTERISTICS Characteristics Symbol Max Max Unit Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W 2N3055AG AYWW MEX MJ1501xG AYWW MEX 2N3055A = Device Code MJ1501x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 7 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: 2N3055A/D 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 120 − − Vdc − − 0.7 0.1 − − 5.0 1.0 − − 30 6.0 − − 5.0 0.2 1.95 3.0 − − 10 20 5.0 70 70 − − − − 1.1 3.0 5.0 0.7 1.8 0.8 2.2 6.0 18 60 600 td − 0.5 ms tr − 4.0 ms ts − 3.0 ms tf − 6.0 ms OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N3055AG MJ15015G, MJ15016G Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) 2N3055AG MJ15015G, MJ15016G Collector Cutoff Current (Note 3) (VCEV = Rated Value, VBE(off) = 1.5 Vdc) 2N3055AG MJ15015G, MJ15016G Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) 2N3055AG MJ15015G, MJ15016G Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) 2N3055AG MJ15015G, MJ15016G IEBO Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non−repetitive) 2N3055AG (VCE = 60 Vdc) MJ15015G, MJ15016G IS/b ICEO ICEV mAdc ICEV mAdc mAdc mAdc SECOND BREAKDOWN (Note 3) Adc ON CHARACTERISTICS (Note 2 and 3) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS (Note 3) Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) 2N3055AG, MJ15015G MJ15016G Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cob MHz pF SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3) RESISTIVE LOAD Delay Time Rise Time Storage Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, tp = 25 ms Duty Cycle v 2% Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 3. Indicates JEDEC Registered Data. (2N3055A) http://onsemi.com 2 PD(AV), AVERAGE POWER DISSIPATION (W) 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) 200 150 MJ15015 MJ15016 100 2N3055A 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating 200 TJ = 150°C hFE , DC CURRENT GAIN 100 70 50 -55°C 30 20 25°C VCE = 4.0 V 10 7 5 3 2 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 2.8 TJ = 25°C 2.4 2 1.6 f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TC = 25°C V, VOLTAGE (VOLTS) 3 2.5 2 1.5 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0 0.2 0.3 0.5 0.7 1 2 3 5 7 8A 0.8 0.4 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 Figure 3. Collector Saturation Region 3.5 0.5 4A 1.2 Figure 2. DC Current Gain 1 IC = 1 A 10 20 10 MJ15016 5.0 2.0 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. “On” Voltages Figure 5. Current−Gain − Bandwidth Product http://onsemi.com 3 2.0 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) 10 7 5 VCC +30 V t, TIME (s) μ 7.5 W 25 ms SCOPE 30 W +13 V 3 0 2 tr 1 0.7 0.5 0.3 1N6073 -11 V VCC = 30 V IC/IB = 10 TJ = 25°C 0.2 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% -5 V 0.1 td 0.2 10 7 5 400 3 200 10 15 7 TJ = 25°C 2 ts tf 0.1 0.7 0.5 0.3 0.2 0.1 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 7. Turn−On Time C, CAPACITANCE (pF) t, TIME (s) μ Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) 0.3 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25°C 0.2 0.3 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 2N3055A MJ15015 MJ15016 Cib 100 50 Cob 30 7 10 20 1.0 15 Figure 8. Turn−Off Times 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://onsemi.com 4 500 1000 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) COLLECTOR CUT−OFF REGION NPN PNP 10,000 1000 VCE = 30 V 1000 IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ VCE = 30 V 100 TJ = 150°C 10 100°C 1.0 IC = ICES REVERSE 0.1 FORWARD 100 10 TJ = 150°C 1.0 100°C IC = ICES 0.1 REVERSE 0.01 FORWARD 25°C 25°C 0.01 +0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.001 -0.2 -0.5 Figure 10. 2N3055A, MJ15015 0 +0.1 +0.2 +0.3 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.5 Figure 11. MJ15016 20 20 0.1ms 30 ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) -0.1 10 100 ms 1 ms 5 100 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 2 1 dc 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 1.0ms 2.0 1.0 0.5 0.2 100 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 Figure 12. Forward Bias Safe Operating Area 2N3055A dc 30 20 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 120 Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. ORDERING INFORMATION Device 100ms Package Shipping 2N3055AG TO−204 (Pb−Free) 100 Units / Tray MJ15015G TO−204 (Pb−Free) 100 Units / Tray MJ15016G TO−204 (Pb−Free) 100 Units / Tray http://onsemi.com 5 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. 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