AP25N170I
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
VDS @ Tj,max.
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
280V
170mΩ
19A
G
S
Description
AP25N170 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
Symbol
Rating
Units
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V3
19
A
3
12
A
48
A
VDS
ID@TC=100℃
Parameter
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.2
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201408121
AP25N170I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance 2
VGS=0V, ID=250uA
VGS=10V, ID=5A
250
-
-
170
V
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=200V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
td(on)
Turn-on Delay Time
VDD=125V
-
9
-
ns
tr
Rise Time
ID=5A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=25V
-
225
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
140
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
800
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP25N170I
50
32
10V
9.0V
8.0V
7.0V
6.0V
ID , Drain Current (A)
40
o
10V
9.0V
8.0V
7.0V
6.0V
T C =150 C
ID , Drain Current (A)
T C =25 o C
30
20
V GS =5.0V
24
16
V GS =5.0V
8
10
0
0
0
8
16
24
0
32
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
2
I D =5A
V GS =10V
I D =1mA
2.4
1.2
.
0.8
Normalized RDS(ON)
Normalized BVDSS
1.6
2
1.6
1.2
0.8
0.4
0.4
0
0
-100
-50
0
50
100
150
-100
o
-50
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
10
I D =250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =150 o C
4
T j =25 o C
1.2
0.8
0.4
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP25N170I
f=1.0MHz
2400
I D =5A
V DS =200V
10
2000
8
1600
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
1200
4
800
2
400
0
0
0
8
16
24
C oss
C rss
32
0
40
80
120
160
200
240
280
320
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
.
1ms
1
10ms
100ms
1s
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
100
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
0.00001
1000
V DS , Drain-to-Source Voltage (V)
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
40
40
V DS =10V
PD , Power Dissipation (W)
ID , Drain Current (A)
T j =25 o C
30
T j =150 o C
20
10
0
30
20
10
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
0
50
100
T C , Case Temperature (
150
o
C)
Fig 12. Total Power Dissipation
4
AP25N170I
210
200
T j =25 o C
180
RDS(ON) (mΩ)
RDS(ON) (mΩ)
190
170
150
V G =5.0V
160
6.0V
7.0V
8.0V
9.0V
V G =10V
140
130
120
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I D , Drain Current (A)
o
T C , Case Temperature( C)
Fig 13. On-Resistance v.s. Gate Voltage
Fig 14. Typ. Drain-Source on State
Resistance
.
5
AP25N170I
MARKING INFORMATION
Part Number
25N170
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6