ON DTA114EET1 Pnp silicon surface mount transistors with monolithic bias resistor network Datasheet

DTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
Features
•
•
•
•
•
•
Pb−Free Packages are Available*
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation, FR−4 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation, FR−4 Board
(Note 2) @ TA = 25°C
Derate above 25°C
Symbol
Value
Unit
200
1.6
mW
mW/°C
600
°C/W
PD
RJA
PNP SILICON BIAS
RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
3
MARKING
DIAGRAM
2
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
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SC−75/SOT−416
CASE 463
STYLE 1
x
M
xM
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
RJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1
Publication Order Number:
DTA114EET1/D
DTA114EET1 Series
ORDERING INFORMATION AND RESISTOR VALUES
Marking
R1 (K)
R2 (K)
Package
Shipping†
DTA114EET1
6A
10
10
SC−75
3000 Tape & Reel
DTA124EET1
6B
22
22
SC−75
3000 Tape & Reel
DTA144EET1
6C
47
47
SC−75
3000 Tape & Reel
DTA114YET1
6D
10
47
SC−75
3000 Tape & Reel
DTA114TET1
6E
10
∞
SC−75
3000 Tape & Reel
DTA143TET1
6F
4.7
∞
SC−75
3000 Tape & Reel
DTA123EET1
6H
2.2
2.2
SC−75
3000 Tape & Reel
DTA123EET1G
6H
2.2
2.2
SC−75
(Pb−Free)
3000 Tape & Reel
DTA143EE
6J
4.7
4.7
SC−75
3000 Tape & Reel
DTA143EET1
6J
4.7
4.7
SC−75
3000 Tape & Reel
DTA143EET1G
6J
4.7
4.7
SC−75
(Pb−Free)
3000 Tape & Reel
DTA143ZET1
6K
4.7
47
SC−75
3000 Tape & Reel
DTA124XET1
6L
22
47
SC−75
3000 Tape & Reel
DTA124XET1G
6L
22
47
SC−75
(Pb−Free)
3000 Tape & Reel
DTA123JET1
6M
2.2
47
SC−75
3000 Tape & Reel
DTA115EET1
6N
100
100
SC−75
3000 Tape & Reel
DTA144WET1
6P
47
22
SC−75
3000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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2
DTA114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
DTA123EET1
DTA114TET1/DTA143TET1
(IC = 10 mA, IB = 1 mA)
DTA143ZET1/DTA124XET1
DTA143EET1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
VOL
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
DTA115EET1
DTA144WET1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
Resistor Ratio
Vdc
R1/R2
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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3
−
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
DTA114EET1 Series
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
RJA = 600°C/W
0
−50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
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4
10
100
1000
DTA114EET1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
100
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 6. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
Figure 5. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
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5
10
DTA114EET1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EET1
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 9. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 10. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 11. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 12. Input Voltage versus Output Current
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6
10
DTA114EET1 Series
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EET1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
−25°C
1
0.1
0.01
Figure 15. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 16. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 17. Input Voltage versus Output Current
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7
10
DTA114EET1 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
2
1
4
6
Figure 18. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
3.5
Cob , CAPACITANCE (pF)
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 20. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
10
+12 V
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
8
Figure 21. Output Current versus Input Voltage
10
25°C
75°C
TA=−25°C
Typical Application
for PNP BRTs
1
0.1
80 90 100
Figure 19. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
LOAD
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 22. Input Voltage versus Output Current
Figure 23. Inexpensive, Unregulated Current Source
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8
DTA114EET1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
−25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1
1000
75°C
TA = −25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
1
VO = 5 V
0
1
2
3
4
TA = −25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 27. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 28. Input Voltage versus Output Current
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9
20
DTA114EET1 Series
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 32. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 33. Input Voltage versus Output Current
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10
DTA114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−A−
S
2
3
D 3 PL
0.20 (0.008)
DIM
A
B
C
D
G
H
J
K
L
S
G −B−
1
M
B
0.20 (0.008) A
K
J
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
L
MILLIMETERS
MIN
MAX
0.70
0.90
1.40
1.80
0.60
0.90
0.15
0.30
1.00 BSC
−−−
0.10
0.10
0.25
1.45
1.75
0.10
0.20
0.50 BSC
H
SOLDERING FOOTPRINT*
0.53
0.020
1.10
0.043
0.53
0.020
0.50
0.020
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
INCHES
MIN
MAX
0.028 0.035
0.055 0.071
0.024 0.035
0.006 0.012
0.039 BSC
−−− 0.004
0.004 0.010
0.057 0.069
0.004 0.008
0.020 BSC
DTA114EET1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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