SavantIC Semiconductor Product Specification BUT76 BUT76A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply ·Motor control and relay driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BUT76 VCBO Collector-base voltage 400 Open base BUT76A VEBO Emitter-base voltage V 1000 BUT76 Collector-emitter voltage UNIT 850 Open emitter BUT76A VCEO VALUE V 450 Open collector 7 V IC Collector current 12 A ICM Collector current-peak 20 A IBM Base current-peak 6 A Ptot Total power dissipation 110 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX UNIT 1.13 K/W SavantIC Semiconductor Product Specification BUT76 BUT76A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICES PARAMETER Collector-emitter breakdown voltage CONDITIONS BUT76 Base-emitter saturation voltage Collector cut-off current TYP. MAX IC=500mA ;LC=125mH BUT76 UNIT 400 BUT76A Emitter-base breakdown voltage Collector-emitter saturation voltage MIN V 450 IE=1mA ;IC=0 6 V IC=6A ;IB=1.2A BUT76A IC=5A ;IB=1A BUT76 IC=6A ;IB=1.2A 1.5 V 1.6 V BUT76A IC=5A ;IB=1A BUT76 VCE=850V; VBE=0 Tj=150 0.5 2.0 BUT76A VCE=1000V; VBE=0 Tj=150 0.5 2.0 hFE DC current gain IC=8A ; VCE=3V COB Output capacitance IE=0 ;VCB=10V;f=1MHz fT Transition frequency IC=1A ;VCE=10V mA 3.2 150 pF 7 MHz Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT76 IC=6A ;IB1=-IB2=1.2A;VCE=150V For BUT76A IC=5A ;IB1=-IB2=1A;VCE=150V 2 1.0 µs 3.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 BUT76 BUT76A