Seme LAB BUR50 Silicon multi-epitaxial npn transistor Datasheet

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
•
High Pulse Power, Fast Switching.
•
Hermetic Metal TO3 Package.
•
Ideally suited for Motor Control
and Power Switching Circuits
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
200V
125V
10V
70A
100A
20A
350W
2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
0.5
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 6522
Issue 2
Page 1 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = 50mA
125
V(BR)EBO
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = 1.0mA
10
ICEO
Collector Cut-Off Current
VCE = 125V
IB = 0
1.0
ICBO
Collector Cut-Off Current
VCB = 200V
IE = 0
0.2
IEBO
Emitter Cut-Off Current
(1)
V(BR)CEO
(1)
VCE(sat)
VBE(sat)
hFE
(1)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Min.
Typ
Max.
Units
V
TC = 125°C
mA
2
VEB = 7V
IC = 0
0.2
IC = 35A
IB = 2A
1.0
IC = 70A
IB = 7A
IC = 35A
IB = 2A
IC = 70A
IB = 7A
IC = 5A
VCE = 4V
20
IC = 50A
VCE = 4V
15
IC = 1.0A
VCE = 5V
0.8
1.5
V
1.8
1.6
2
140
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
ton
Turn-On Time
ts
Storage Time
IC = 70A
tf
Fall Time
IB1 = -IB2 = 7A
10
16
MHz
f = 1.0MHz
IC = 70A
VCC = 60V
IB1 = 7A
VCC = 60V
0.5
1.2
0.82
2
0.1
0.5
µs
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 6522
Issue 2
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
MECHANICAL DATA
Dimensions in mm (inches)
3 9 .9 5 (1 .5 7 3 )
m a x .
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )
2
1
2 6 .6 7 (1 .0 5 0 )
m a x .
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )
7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )
2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 6522
Issue 2
Page 3 of 3
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