SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 • High Pulse Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 200V 125V 10V 70A 100A 20A 350W 2W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6522 Issue 2 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 50mA 125 V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = 1.0mA 10 ICEO Collector Cut-Off Current VCE = 125V IB = 0 1.0 ICBO Collector Cut-Off Current VCB = 200V IE = 0 0.2 IEBO Emitter Cut-Off Current (1) V(BR)CEO (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. Units V TC = 125°C mA 2 VEB = 7V IC = 0 0.2 IC = 35A IB = 2A 1.0 IC = 70A IB = 7A IC = 35A IB = 2A IC = 70A IB = 7A IC = 5A VCE = 4V 20 IC = 50A VCE = 4V 15 IC = 1.0A VCE = 5V 0.8 1.5 V 1.8 1.6 2 140 DYNAMIC CHARACTERISTICS fT Transition Frequency ton Turn-On Time ts Storage Time IC = 70A tf Fall Time IB1 = -IB2 = 7A 10 16 MHz f = 1.0MHz IC = 70A VCC = 60V IB1 = 7A VCC = 60V 0.5 1.2 0.82 2 0.1 0.5 µs Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6522 Issue 2 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 1 2 6 .6 7 (1 .0 5 0 ) m a x . 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6522 Issue 2 Page 3 of 3