WINNERJOIN MMDT5451 Multi-chip general purpose transistor (pnp and npn) Datasheet

RoHS
MMDT5451
MMDT5451 Multi-Chip General Purpose TRANSISTOR
D
T
,. L
SOT-363
(PNP and NPN)
FEATURES
Power dissipation
PCM:
200
mW (Tamb=25℃)
Collector current
ICM:
±200
mA
Collector-base voltage
V(BR)CBO:
180/-160
V
Operating and storage junction temperature range
IC
TJ, Tstg: -55℃ to +150℃
R
T
TR2
TR1
C
E
L
O
N
MAKING: KNM
TR2(NPN 5551) ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
E
Symbol
Test
C
O
unless otherwise specified)
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
160
V
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=120V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB=4V, IC=0
50
nA
J
E
Emitter-base breakdown voltage
W
DC current gain
VCE=5V, IC=1mA
hFE
VCE=5V, IC=10mA
VCE=5V, IC=50mA
Collector-emitter saturation voltage
VCE(sat)
Emitter-base saturation voltage
VBE(sat)
80
80
30
250
IC=10mA, IB=1mA
0.15
IC=50mA, IB=5mA
0.2
IC=10mA, IB=1mA
1
IC=50mA, IB=5mA
V
V
fT
VCE=10V, IC=10mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
6
pF
Noise Figure
NF
VCE=5V, IC=0.2mA, f=1KHz
8
dB
Transition frequency
WEJ ELECTRONIC CO.
Http:// www.wej.cn
100
MHz
E-mail:[email protected]
RoHS
MMDT5451
TR1(PNP 5401) ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Test
unless otherwise specified)
conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
-160
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA, IB=0
-150
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-120V, IE=0
Emitter cut-off current
IEBO
VEB=-3V, IC=0
DC current gain
hFE
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
Collector-emitter saturation voltage
VCE(sat)
Emitter-base saturation voltage
VBE(sat)
IC=-10mA, IB=-1mA
IC
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
N
VCE=-10V, IC=-10mA, f=100MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise Figure
NF
J
E
C
IC=-50mA, IB=-5mA
fT
Transition frequency
50
60
50
R
T
O
VCE=-5V, IC=-0.2mA, f=1KHz
TYP
MAX
D
T
,. L
V
V
V
O
-50
nA
-50
nA
240
-0.2
-0.5
-1
100
V
6
pF
8
dB
E
W
Http:// www.wej.cn
V
MHz
C
E
L
WEJ ELECTRONIC CO.
UNIT
E-mail:[email protected]
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