BRIGHT BL-PDB-JJS-C10 High brightness surface mount led Datasheet

AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Feature:
1. High brightness surface mount LED.
2. Based on GaN technology.
3. 120° viewing angle.
4. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm.
5. Qualified according to JEDEC moisture sensitivity Level 2.
6. Compatible to both IR reflow soldering and TTW soldering.
•
Package Dimension:
Solder Pad Design
V.2 Page: 1 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Optical Characteristics:
Part Number
BL-PDB-JJS-C10
•
BIN K1
•
BIN K2
•
BIN L1
•
BIN L2
BL-PDW-JJD-C10
•
•
•
•
BIN N1
BIN N2
BIN P1
BIN P2
Chip Technology / Viewing Luminous Intensity @ If = 20mA
Color
Angle Iv ( mcd )
7.2 … 18.0
GaN /
120
7.2 … 9.0
9.0 … 11.2
11.2 … 14.0
14.0 … 18.0
Blue, 466 nm
GaN /
120
28.5 … 71.5
White
28.5 …
35.5 …
45.0 …
56.0 …
35.5
45.0
56.0
71.5
NOTE:
1. Other luminous intensity groups are also available upon request.
2. Luminous intensity is measured with an accuracy of ±11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one
wavelength group is allowed for each reel.
4. An optional Vf binning is also available upon request. Binning scheme is as per following
table.
•
Absolute Maximum Ratings:
Parameter
Maximum Value
Unit
DC forward current.
20
mA
Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005)
200
mA
Forward voltage (IF=20mA)
4.55
V
Reverse voltage (IR=10 µA)
5
V
125
°C
Operating temperature.
-40 … +100
°C
Storage temperature.
-40 … +100
°C
LED junction temperature.
Power dissipation ( at room temperature )
85
mW
V.2 Page: 2 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Vf Binning:
Vf Bin @ 20mA
Forward voltage (V)
Standard
3.65 … 4.55
02
3.65 … 3.95
03
3.95 … 4.25
04
4.25 … 4.55
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
•
BL-PDW, White Color Grouping
GaN White Bin Structure
0.5
0.48
0.46
0.44
0.42
0.4
0.38
0.36
0.34
0.32
0.3
0.28
0.26
0.24
0.22
0.2
0.25
Y2
Y1
X2
X1
0.26
0.27
Bin
X1
X2
Y1
Y2
0.28
0.29
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.3
0.31
1
0.303
0.307
0.315
0.328
0.328
0.349
0.340
0.369
0.32
0.33
2
0.315
0.328
0.328
0.349
0.34
0.369
0.353
0.39
0.34
0.35
3
0.315
0.363
0.328
0.384
0.34
0.404
0.353
0.425
0.36
0.37
4
0.303
0.342
0.315
0.363
0.328
0.384
0.340
0.404
Color coordinate is measured with an accuracy of ±0.01
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AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Typical electro-optical characteristics curves:
Fig. 1 Relative luminous intensity vs. forward current.
Fig. 2 Forward current vs. forward voltage.
Forward Current (mA) vs. Forward Voltage
(GaN:Blue)
Intensity vs. DC Forward Current
Relative intensity. Normalized at 20 mA.
35
1.6
30
Forward Current (mA)
1.4
1.2
1.0
0.8
0.6
0.4
25
20
15
10
5
0.2
0
0.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
2.0
35.0
2.5
3.0
Fig. 3 Radiation pattern.
30°
10°
20°
4.5
5.0
Fig. 4 Maximum forward current vs. temperature.
25
20
Forward Current, If
0.8
0.6
50°
4.0
0°
1.0
40°
3.5
Forward Voltage (V)
FORWARD CURRENT (mA)
15
10
0.4
60°
5
70°
0.2
0
0
80°
10
20
30
40
50
60
70
80
90
Ambient Temperature
0
90°
Fig. 5 Relative Intensity vs. Wavelength
Relative Spectral Emission
1.0
0.9
Relative Intensity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400
450
500
550
600
650
700
Wavelength (nm)
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100
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
Fig. 6 Recommended IR-reflow Soldering Profile.
Fig. 7 Recommended TTW Soldering Profile.
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AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Taping And Orientation.
Reels come in quantity of 8000 units or 2000 units.
Reel diameters are 330 mm and 180 mm respectively.
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