BWTECH MSQ27N30 Dual n-channel 30-v (d-s) mosfet Datasheet

Preliminary MSQ27N30
Dual N-Channel 30-V (D-S) MOSFET
Features
• Low RDS(on) provides higher efficiency and
Extends battery life
• Low thermal impedance copper lead frame
• SOIC-8PP saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Application
• DC-DC converters
• Power management in portable
• Battery-powered products such as computers, Printers
PCMCIA cards, cellular and cordless telephones.
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MSQ27N30]
© Bruckewell Technology Corporation Rev. A -2014
Preliminary MSQ27N30
Dual N-Channel 30-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
20
V
Drain Current -Continuous (TA=25°C)
27
A
Drain Current -Continuous (TA=70°C)
22
A
50
A
2.3
A
ID
IDM
IS
PD
TJ,TSTG
Drain Current Pulsed
Continuous Source Current (Diode Conduction)
a
5
a
2.2
Power Dissipation (TA=25°C)
Power Dissipation (TA=70°C)
Operating and Storage Temperature Range
Thermal Resistance Characteristics
Symbol
RθJA
a
W
-55 to +150
Parameter
°C
Value
a
25
a
65
Maximum Junction-to-Ambient ( t<= 10 sec)
Maximum Junction-to-Ambient (Steady State)
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static
Symbol
Test Conditions
VGS(th)
VGS = VDS , ID=250uA
r
DS(on)
VGS = 10 V , ID = 10 A
IDSS
VGS = 4.5 V , ID = 8 A
VDS = 24 V , VGS = 0 V
VDS = 24 V , VGS = 0 V , Tj = 55°C
Min
Typ.
Max.
Units
1
--
--
V
--
--
--
--
4.6
5.5
1
5
mΩ
uA
IGSS
VGS = 20 V , VDS = 0 V
--
--
100
nA
ID(on)
VGS = 10 V , VDS = 5 V
40
--
--
A
VSD
VGS = 0 V , IS = 2.3 A
--
0.7
--
V
Gfs
VDS = 15 V , ID = 10 A
--
40
--
S
Min
Typ.
Max.
Units
--
15
--
ns
Dynamic Characteristics
Symbol
Test Conditions
td(on)
tr
VDD = 15 V, ID = 1 A , RL = 6 Ω
--
10
--
ns
td(off)
VGEN = 10 V
--
54
--
ns
--
26
--
ns
tf
Publication Order Number: [MSQ27N30]
© Bruckewell Technology Corporation Rev. A -2014
Preliminary MSQ27N30
Dual N-Channel 30-V (D-S) MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDS = 15 V,ID = 10 A,
VGS = 4.5 V
Qgd
Min
Typ.
Max.
Units
--
15
--
nC
--
3
--
nC
--
5
--
nC
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MSQ27N30]
© Bruckewell Technology Corporation Rev. A -2014
Preliminary MSQ27N30
Dual N-Channel 30-V (D-S) MOSFET
Disclaimer
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described in the product specification is suitable for use in a particular application. Parameters
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may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSQ27N30]
© Bruckewell Technology Corporation Rev. A -2014
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