CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03AQ8 BVDSS ID @VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 20A 4.4mΩ(typ) 5.8mΩ(typ) Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Symbol Outline MTB04N03AQ8 SOP-8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB04N03AQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB04N03AQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=20A, VDD=25V TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ VDS VGS Tj, Tstg 30 ±20 20 12.6 14 11 100 *1 20 400 *2 5 2 2.5 *3 1.6 *3 -55~+150 Symbol Rth,j-c Rth,j-a Value 25 50 *3 ID IDSM IDM IAS EAS PD PDSM Operating Junction and Storage Temperature Range Limits Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS RDS(ON) *1 Dynamic Ciss Coss Crss MTB04N03AQ8 Min. Typ. Max. Unit 30 1.0 - 2.0 37 4.4 5.8 2.5 ±100 1 25 6 8 V V S nA - 2394 494 281 - Test Conditions mΩ mΩ VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=18A VGS=±20 VDS =30V, VGS =0 VDS =30V, VGS =0, Tj=125°C VGS =10V, ID=18A VGS =4.5V, ID=12A pF VGS=0V, VDS=15V, f=1MHz μA CYStek Product Specification CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Min. - Typ. 46 26 8 13 11 12 43 17 1.5 Max. - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 0.81 36 16 10 40 1.2 - Unit Test Conditions nC VDS=15V, VGS=10V, ID=18A ns VDS=15V, ID=1A, VGS=10V, RGS=2.7Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IS=18A, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTB04N03AQ8 CYStek Product Specification Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V, 9V, 8V, 7V, 6V, 5V 140 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 160 120 100 VGS=4V 80 60 40 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=3V 20 0.4 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=3V VGS=4.5V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 1 0.2 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 90 ID=18A 80 70 60 50 40 30 20 10 2 VGS=10V, ID=18A 1.6 1.2 0.8 0.4 RDSON@Tj=25°C : 4.4mΩ typ. 0 0 0 MTB04N03AQ8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 100 0.1 1 10 VDS , Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 50 75 100 125 150 175 10 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=15V ID=18A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 Qg, Total Gate Charge(nC) 50 60 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 1000 ID, Maximum Drain Current(A) RDS(ON ID, Drain Current(A) 25 Gate Charge Characteristics 100 100 0 Tj, Junction Temperature(°C) ) Limit 10 10μs 100μs 1ms 10ms 1 TA=25°C, Tj=150°C VGS=10V, RθJA=50°C/W Single Pulse 0.1 100m DC 20 15 10 5 VGS=10V, RθJC=25°C/W 0 0.01 0.1 MTB04N03AQ8 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 100 100 VDS=10V 90 TJ(MAX) =150°C TA=25°C θJA=50°C/W 80 80 70 Power (W) ID, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 60 50 40 60 40 30 20 20 10 0 0.0001 0 0 1 2 3 4 VGS , Gate-Source Voltage(V) 5 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB04N03AQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB04N03AQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB04N03AQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 9/9 SOP-8 Dimension Marking: B04 N03A Device Name Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB04N03AQ8 CYStek Product Specification