NEC NE76100M General purpose gaas mesfet Datasheet

GENERAL PURPOSE
GaAs MESFET
FEATURES
• LG = 1.0 µm, WG = 400 µm
DESCRIPTION
NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76100 is suitable for a wide variety of commercial and
industrial applications.
4
24
3.5
21
3
18
Ga
2.5
15
2
12
9
1.5
6
1
NF
0.5
Associated Gain, GA (dB)
• HIGH ASSOCIATED GAIN:
GA = 12.0 dB typical at f = 4 GHz
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
Optimum Noise Figure, NFOPT (dB)
• LOW NOISE FIGURE:
NF = 0.8 dB typical at f = 4 GHz
NE76100
3
0
0
1
10
20
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NFOPT
1
PARAMETERS AND CONDITIONS
NE76100
00 (CHIP)
UNITS
MIN
TYP
MAX
1.4
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
dB
0.8
GA1
Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz
dB
12.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dBm
dBm
12.5
15.0
Gain at P1dB, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dB
dB
11.5
13.5
Saturated Drain Current at VDS = 3 V, VGS = 0
G1dB
IDSS
mA
30
60
100
VP
Pinch Off Voltage at VDS = 3 V, ID = 100 mA
V
-3.0
-1.1
-0.5
gm
Transconductance at VDS = 3 V, ID = 10 mA
mS
20
45
IGSO
Gate to Source Leak Current at VGS = -5 V
µA
RTH2
Thermal Resistance
°C/W
1.0
10
190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects
for 10 samples.
2. Chip mounted on an infinite heat sink.
California Eastern Laboratories
NE76100
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
5
VGD
Gate to Drain Voltage
V
-6
V
-5
mA
IDSS
VGS
Gate to Source Voltage
IDS
Drain Current
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
ΓOPT
FREQ.
NFOPT
GA
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
1.0
0.55
18.0
0.90
16
0.50
2.0
0.60
15.0
0.82
34
0.48
4.0
0.80
12.0
0.70
65
0.45
6.0
1.15
10.0
0.60
95
0.39
TCH
Channel Temperature
°C
175
8.0
1.60
8.5
0.52
122
0.38
TSTG
Storage Temperature
°C
-65 to +175
10.0
2.10
7.5
0.50
150
0.32
PT2
Total Power Dissipation
mW
350
12.0
2.60
7.0
0.50
171
0.27
Notes:
1. Operation in excess of anyone of these parameters may result in
permanent damage.
2. Mounted on an infinite heat sink.
Includes effects from wirebonds. See S-Parameter data for details.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE AND ASSOCIATED
GAIN vs. DRAIN CURRENT
VDS = 3 V, f = 4 GHz
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
GA
Infinite
Heat sink
250
200
150
100
14
2
13
12
11
1.5
NF
10
9
1
50
8
7
0.5
0
25
50
75
100
125
150
175
0
200
10
20
30
40
50
Ambient Temperature, TA (°C)
Drain Current, IDS (mA)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSCONDUCTANCE vs.
DRAIN CURRENT VDS = 3 V
60
75
Transconductance, gm (mS)
100
80
VGS
0
60
-0.2
40
-0.4
20
-0.6
0
-0.8
-1.0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
60
45
30
15
0
5
0
20
40
60
Drain Current, IDS (mA)
80
100
Associated Gain, GA (dB)
300
0
Drain Current, IDS (mA)
15
350
Noise Figure, NF (dB)
Total Power Dissipation, PT (mW)
400
NE76100
TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)
j50
+90˚
j25
+60˚
+120˚
j100
S11
20 GHz
+30˚
+150˚
j10
10
0
25
50
100
S11
.1 GHz
S22
.1 GHz
+180
˚
–
S12
.1 GHz
S21
.1 GHz
1
S22
20 GHz
-j10
S12
20 GHz
0˚
S21
20 GHz
2
-150˚
-30˚
3
4
-j25
-j100
-120˚
5
-90˚
-j50
-60˚
VDS = 3 V, lDS = 10 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
0.99
0.999
0.996
0.986
0.971
0.951
0.905
0.859
0.818
0.784
0.759
0.739
0.726
0.718
0.713
0.711
0.712
0.715
0.719
0.725
0.732
0.739
0.747
0.755
S21
ANG
-2.3
-4.5
-11.3
-22.5
-33.3
-43.9
-63.6
-81.4
-97.3
-111.4
-124.2
-135.6
-146.0
-155.4
-164.0
-172.0
-179.3
173.9
167.5
161.6
156.1
150.9
146.0
141.4
S12
MAG
ANG
MAG
ANG
3.782
3.779
3.763
3.707
3.619
3.505
3.233
2.941
2.662
2.411
2.190
1.999
1.833
1.688
1.562
1.449
1.349
1.259
1.177
1.102
1.033
0.968
0.908
0.851
178.2
176.3
170.9
161.9
153.1
144.7
128.9
114.6
101.9
90.3
79.8
70.1
61.1
52.7
44.7
37.2
29.9
23.0
16.4
10.0
3.8
-2.1
-7.8
-13.4
0.004
0.007
0.018
0.036
0.053
0.068
0.093
0.112
0.126
0.135
0.141
0.145
0.148
0.149
0.149
0.149
0.148
0.147
0.146
0.144
0.142
0.141
0.139
0.138
86.7
86.4
83.1
76.9
70.8
65.0
54.5
45.5
37.9
31.5
26.1
21.6
17.7
14.3
11.4
8.8
6.7
4.8
3.2
1.8
0.7
-0.2
-0.9
-1.5
S22
MAG
0.769
0.769
0.767
0.759
0.747
0.731
0.694
0.657
0.624
0.598
0.577
0.562
0.552
0.547
0.545
0.545
0.548
0.554
0.561
0.569
0.579
0.589
0.601
0.613
K
ANG
-1.2
-2.3
-5.7
-11.4
16.8
-22.0
-31.5
-39.7
-46.8
-53.1
-58.9
-64.2
-69.3
-74.2
-79.0
-83.7
-88.3
-92.9
-97.5
-102.1
-106.7
-111.2
-115.7
-120.1
0.052
0.037
0.045
0.076
0.110
0.145
0.214
0.281
0.347
0.410
0.470
0.526
0.578
0.626
0.669
0.708
0.741
0.770
0.793
0.811
0.824
0.831
0.833
0.830
S21
MAG1
(dB)
(dB)
11.6
11.5
11.5
11.2
11.4
10.9
10.2
9.4
8.5
7.6
6.8
6.0
5.3
4.5
3.9
3.2
2.6
2.0
1.4
0.8
0.3
-0.3
-0.8
-1.4
30.1
27.1
23.1
18.4
20.1
17.1
15.4
14.2
13.3
12.5
11.9
11.4
10.9
10.5
10.2
9.9
9.6
9.3
9.1
8.8
8.6
8.4
8.1
7.9
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2. S-parameters include bond wires as follows:
GATE:
TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN:
TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE:
0.0007" (17.8 µm) DIA. GOLD.
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE76100
TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)
j50
+90˚
+60˚
+120˚
j100
j25
S11
20 GHz
+30˚
+150˚
j10
10
0
25
50
100
S11
.1 GHz
S22
.1 GHz
+180
˚
–
S12
.1 GHz
S21
.1 GHz
1
S22
20 GHz
-j10
S12
20 GHz
0˚
S21
20 GHz
2
-150˚
-30˚
3
4
-j25
-j100
-120˚
-j50
5
-90˚
-60˚
VDS = 3 V, lDS = 20 mA
FREQUENCY
(GHz)
0.1
0.2
0.5
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
S11
MAG
0.999
0.999
0.995
0.983
0.965
0.943
0.893
0.845
0.805
0.774
0.752
0.736
0.726
0.720
0.717
0.717
0.719
0.722
0.727
0.733
0.739
0.746
0.754
0.761
S21
ANG
-2.5
-5.1
-12.7
-25.2
-37.3
-48.8
-70.1
-88.8
-105.2
-119.5
-132.1
-143.3
-153.3
-162.3
-170.6
-178.1
174.9
168.5
162.5
156.9
151.6
146.7
142.1
137.7
MAG
4.692
4.668
4.662
4.572
4.435
4.261
3.860
3.451
3.078
2.754
2.477
2.242
2.042
1.870
1.722
1.592
1.477
1.374
1.282
1.197
1.120
1.049
0.983
0.921
S12
ANG
178.0
176.1
170.3
160.7
151.5
142.6
126.5
112.3
99.7
88.6
78.5
69.2
60.6
52.5
44.9
37.7
30.7
24.1
17.7
11.5
5.6
-0.2
-5.7
-11.1
MAG
0.003
0.007
0.017
0.033
0.048
0.061
0.083
0.098
0.109
0.117
0.122
0.125
0.127
0.129
0.130
0.131
0.131
0.131
0.131
0.131
0.131
0.131
0.132
0.132
S22
ANG
86.5
86.2
82.7
76.2
69.8
63.8
53.3
44.7
37.8
32.2
27.7
23.9
20.8
18.2
16.1
14.2
12.7
11.4
10.3
9.4
8.6
7.9
7.4
6.9
MAG
0.713
0.712
0.710
0.701
0.686
0.669
0.629
0.592
0.560
0.536
0.519
0.507
0.500
0.497
0.497
0.500
0.505
0.511
0.519
0.529
0.539
0.551
0.563
0.575
ANG
-1.2
-2.5
-6.2
-12.2
-17.9
-23.3
-33.0
-41.1
-48.0
-54.1
-59.6
-64.8
-69.8
-74.7
-79.4
-84.2
-88.8
-93.5
-98.1
-102.7
-107.2
-111.7
-116.2
-120.6
K
0.053
0.038
0.047
0.081
0.117
0.154
0.227
0.299
0.368
0.434
0.496
0.554
0.606
0.654
0.696
0.732
0.762
0.787
0.805
0.816
0.823
0.823
0.818
0.808
S21
MAG1
(dB)
13.4
13.4
13.4
13.2
12.9
12.6
11.7
10.8
9.8
8.8
7.9
7.0
6.2
5.4
4.7
4.0
3.4
2.8
2.2
1.6
1.0
0.4
-0.1
-0.7
(dB)
31.4
28.4
24.4
21.4
19.7
18.4
16.7
15.4
14.5
13.7
13.1
12.5
12.0
11.6
11.2
10.9
10.5
10.2
9.9
9.6
9.3
9.0
8.7
8.4
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2. S-parameters include bond wires as follows:
GATE:
TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN:
TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE:
0.0007" (17.8 µm) DIA. GOLD.
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE76100
TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)
j50
+90˚
+60˚
+120˚
j100
j25
S11
20 GHz
+30˚
+150˚
j10
10
0
25
50
100
S11
.1 GHz
S22
.1 GHz
+180
˚
–
S12
.1 GHz
S21
.1 GHz
1
S22
20 GHz
-j10
S12
20 GHz
0˚
S21
20 GHz
2
-150˚
-30˚
3
4
-j25
-j100
-120˚
-60˚
5
-90˚
-j50
VDS = 3 V, lDS = 30 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.1
0.2
0.5
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
0.999
0.999
0.995
0.982
0.963
0.939
0.887
0.840
0.802
0.773
0.752
0.738
0.730
0.725
0.723
0.723
0.726
0.730
0.735
0.740
0.747
0.754
0.761
0.768
-2.7
-5.4
-13.4
-26.6
-39.3
-51.4
-73.4
-92.5
-109.0
-123.3
-135.8
-146.8
-156.6
-165.5
-173.5
179.1
172.4
166.1
160.3
154.8
149.7
144.9
140.4
136.1
MAG
5.142
5.137
5.104
4.995
4.827
4.619
4.146
3.676
3.256
2.896
2.594
2.340
2.125
1.941
1.783
1.646
1.524
1.417
1.320
1.232
1.151
1.077
1.009
0.945
S12
ANG
178.0
176.0
169.9
160.1
150.6
141.5
125.2
111.0
98.6
87.6
77.6
68.6
60.1
52.2
44.7
37.6
30.8
24.3
18.0
11.9
6.0
0.4
-5.1
-10.4
S22
MAG
ANG
0.003
0.006
0.016
0.031
0.045
0.058
0.078
0.092
0.102
0.108
0.113
0.116
0.118
0.120
0.121
0.122
0.123
0.124
0.124
0.125
0.126
0.127
0.128
0.129
86.5
86.1
82.5
75.7
69.2
63.2
52.7
44.4
37.8
32.6
28.5
25.1
22.4
20.2
18.4
16.8
15.6
14.5
13.6
12.9
12.2
11.7
11.2
10.8
MAG
0.694
0.693
0.690
0.680
0.665
0.647
0.606
0.569
0.538
0.516
0.500
0.490
0.485
0.483
0.484
0.487
0.493
0.500
0.508
0.518
0.529
0.541
0.553
0.566
K
ANG
-1.3
-2.5
-6.3
-12.5
-18.3
-23.7
-33.3
-41.2
-48.0
-53.9
-59.4
-64.5
-69.5
-74.3
-79.1
-83.8
-88.5
-93.2
-97.8
-102.5
-107.0
-111.6
-116.1
-120.5
0.054
0.039
0.049
0.083
0.120
0.158
0.233
0.307
0.378
0.445
0.508
0.565
0.618
0.664
0.705
0.739
0.766
0.787
0.802
0.810
0.812
0.808
0.800
0.787
S21
MAG1
(dB)
(dB)
14.2
14.2
14.2
14.0
13.7
13.3
12.4
11.3
10.3
9.2
8.3
7.4
6.5
5.8
5.0
4.3
3.7
3.0
2.4
1.8
1.2
0.6
0.1
-0.5
32.0
29.0
25.0
22.0
20.3
19.0
17.3
16.0
15.1
14.3
13.6
13.1
12.6
12.1
11.7
11.3
10.9
10.6
10.3
9.9
9.6
9.3
9.0
8.7
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2. S-parameters include bond wires as follows:
GATE:
TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN:
TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE:
0.0007" (17.8 µm) DIA. GOLD.
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE76100
TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)
j50
+90˚
j25
+60˚
+120˚
j100
S11
20 GHz
+30˚
+150˚
j10
0
10
25
50
100
S11
.1 GHz
S22
.1 GHz
+180
˚
–
S12
.1 GHz
S21
.1 GHz
1
S22
20 GHz
-j10
S12
20 GHz
0˚
S21
20 GHz
2
-150˚
-30˚
3
4
-j25
-j100
-120˚
-j50
VDS = 3 V, lDS
FREQUENCY
-60˚
5
-90˚
= 40 mA
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
0.999
0.999
0.995
0.981
0.961
0.937
0.885
0.838
0.800
0.773
0.753
0.741
0.733
0.728
0.727
0.728
0.731
0.734
0.739
0.745
0.751
0.758
0.765
0.772
S21
ANG
-2.8
-5.6
-13.9
-27.5
-40.6
-53.0
-75.5
-94.8
-111.3
-125.6
-138.0
-148.9
-158.6
-167.3
-175.2
177.6
170.9
164.7
159.0
153.6
148.6
143.9
139.4
135.2
S12
S22
MAG
ANG
MAG
ANG
MAG
5.433
5.428
5.391
5.267
5.079
4.846
4.325
3.815
3.365
2.984
2.666
2.400
2.176
1.985
1.821
1.679
1.554
1.442
1.343
1.252
1.170
1.094
1.024
0.959
177.9
175.9
169.7
159.6
150.0
140.8
124.4
110.2
97.8
86.9
77.1
68.1
59.8
51.9
44.5
37.5
30.7
24.3
18.0
12.0
6.2
0.5
-4.9
-10.2
0.003
0.006
0.015
0.030
0.044
0.055
0.074
0.087
0.096
0.102
0.107
0.110
0.112
0.114
0.115
0.117
0.118
0.119
0.120
0.121
0.123
0.124
0.125
0.127
86.4
86.0
82.3
75.5
69.0
62.9
52.6
44.4
38.1
33.2
29.4
26.3
23.9
21.9
20.3
18.9
17.8
16.9
16.2
15.5
14.9
14.4
13.9
13.5
0.685
0.684
0.681
0.671
0.655
0.637
0.596
0.559
0.530
0.508
0.494
0.484
0.480
0.479
0.480
0.484
0.490
0.497
0.506
0.516
0.527
0.538
0.551
0.563
K
ANG
-1.3
-2.5
-6.3
-12.5
-18.3
-23.7
-33.1
-40.8
-47.4
-53.2
-58.5
-63.6
-68.6
-73.4
-78.2
-82.9
-87.7
-92.4
-97.1
-101.7
-106.3
-110.9
-115.4
-119.9
0.054
0.039
0.049
0.085
0.123
0.162
0.239
0.313
0.385
0.453
0.516
0.573
0.625
0.670
0.709
0.740
0.765
0.784
0.795
0.800
0.799
0.793
0.782
0.767
S21
MAG1
(dB)
(dB)
14.7
14.7
14.6
14.4
14.1
13.7
12.7
11.6
10.5
9.5
8.5
7.6
6.8
6.0
5.2
4.5
3.8
3.2
2.6
2.0
1.4
0.8
0.2
-0.4
32.4
29.4
25.4
22.4
20.7
19.4
17.7
16.4
15.4
14.7
14.0
13.4
12.9
12.4
12.0
11.6
11.2
10.8
10.5
10.1
9.8
9.5
9.1
8.8
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2. S-parameters include bond wires as follows:
GATE:
TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN:
TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE:
0.0007" (17.8 µm) DIA. GOLD.
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE76100
NE76100 LINEAR MODEL
SCHEMATIC
LG
0.235
GATE
RG
CDG
RD
1.2
2
GGS
1E-6
CGS
CDC
0.085
g
t
f=200GHz
RDS
CDS
0.079
RI
3
RS
2
LS
0.025
SOURCE
BIAS DEPENDANT MODEL PARAMETERS
Parameters
3 V, 10 mA
3 V, 20 mA
3 V, 30 mA
3 V, 40 mA
g
48 mS
63 mS
70 mS
76 mS
t
5 pSec
4.5 pSec
4.5 pSec
4 pSec
350 ohms
260 ohms
240 ohms
230 ohms
RDS
CGS
0.45 pF
0.52 pF
0.57 pF
0.61pF
CDG
0.07 pF
0.068 pF
0.065 pF
0.061 pF
UNITS
Parameter
capacitance
inductance
resistance
conductance
time
frequency
MODEL RANGE
Units
picofarads
nanohenries
ohms
millisiemans
picoseconds
gigahertz
Frequency:
Bias:
Date:
0.1 to 20 GHz
VDS = 3 V, ID = 10, 20, 30, 40 mA
10/23/96
LD
0.04
DRAIN
NE76100
OUTLINE DIMENSIONS (Units in µm)
NE76100 (CHIP)
500
40
102
58
47
90
S
S
76
76
D
133
D
360
90
70
205
G
45
Chip Thickness: 140 µm
Note:
All dimensions are typical unless otherwise specified.
ORDERING INFORMATION
PART NUMBER
IDSS SELECTION
NE76100
30 to 100 mA (Standard)
NE76100N
30 to 60
NE76100M
60 to 100
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
12/02/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE