Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO n General Description n Features The AME8803 family of positive, linear regulators feature low quiescent current (30µA typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23-6 package is attractive for "Pocket" and "Hand Held" applications. l l l l l These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the "Worst" of operating conditions. l l l An additional feature is a "Power Good" detector, which pulls low when the output is out of regulation. In applications requiring a low noise, regulated supply, place a 1000pF capacitor between Bypass and ground. l l l l The AME8803 is stable with an output capacitance of 2.2µF or greater. l Very Low Dropout Voltage Guaranteed 300mA Output Accurate to within 1.5% 30µA Quiescent Current Over-Temperature Shutdown Current Limiting Short Circuit Current Fold-back Noise Reduction Bypass Capacitor Power Good Detector Power-Saving Shutdown Mode Space-Saving SOT-26 (SOT-23-6) Factory Pre-set Output Voltages Low Temperature Coefficient n Applications l l l n Functional Block Diagram l l l IN OUT Overcurrent Shutdown l Instrumentation Portable Electronics Wireless Devices Cordless Phones PC Peripherals Battery Powered Widgets Electronic Scales n Typical Application Thermal Shutdown EN IN EN BYP PG V ref PG AME8803 IN BYP GND OUT OUT R1 x110% AMP 5V C1 C2 1µF 1nF C3 2.2µF R2 V ref x90% V ref =1.215V GND 1 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 n Pin Configuration AME8814 SOT-26 W Top View AME8803 SOT-26 Top View 6 1 5 2 6 4 3 4. PG 5. BYP 6. VOUT 1. VIN 2. GND 3. EN 1 5 2 4 3 n Ordering Information 2 Output Package Operating Temp. Part Number Marking AME8803AEEY AAPww 3.3V SOT-26 -40OC to +85OC AME8803BEEY AAQww 3.0V SOT-26 -40OC to +85OC AME8803CEEY AARww 2.8V SOT-26 -40OC to +85OC AME8803DEEY AASww 2.5V SOT-26 -40OC to +85OC AME8803EEEY AATww 3.8V SOT-26 -40OC to +85OC AME8803FEEY ABQww 3.6V SOT-26 -40OC to +85OC AME8803GEEY ACHww 3.5V SOT-26 -40OC to +85OC AME8803HEEY AGKww 2.7V SOT-26 -40OC to +85OC AME8803IEEY AEQww 3.4V SOT-26 -40OC to +85OC AME8803JEEY AGSww 2.85V SOT-26 -40OC to +85OC AME8803KEEY AHUww 3.7V SOT-26 -40OC to +85OC AME8803LEEY AJKww 1.5V SOT-26 -40OC to +85OC AME8803MEEY AJLww 1.8V SOT-26 -40OC to +85OC AME8803NEEY ALAww 2.9V SOT-26 -40OC to +85OC AME8803OEEY ALBww 3.1V SOT-26 -40OC to +85OC 1. EN 2. GND 3. BYP 4. VOUT 5. GND 6. VIN Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO n Ordering Information Part Number Marking Output Package Operating Temp. AME8814AEEY AIEww 3.3V SOT-26 -40OC to +85OC AME8814BEEY AIFww 3.0V SOT-26 -40OC to +85OC AME8814CEEY AIGww 2.8V SOT-26 -40OC to +85OC AME8814DEEY AIHww 2.5V SOT-26 -40OC to +85OC AME8814EEEY AIIww 3.8V SOT-26 -40OC to +85OC AME8814FEEY AIJww 3.6V SOT-26 -40OC to +85OC AME8814GEEY AIKww 3.5V SOT-26 -40OC to +85OC AME8814HEEY AILww 2.7V SOT-26 -40OC to +85OC AME8814IEEY AIMww 3.4V SOT-26 -40OC to +85OC AME8814JEEY AINww 2.85V SOT-26 -40OC to +85OC AME8814KEEY AIOww 3.7V SOT-26 -40OC to +85OC AME8814LEEY AJDww 1.5V SOT-26 -40OC to +85OC AME8814MEEY AJEww 1.8V SOT-26 -40OC to +85OC AME8814NEEY AKYww 2.9V SOT-26 -40OC to +85OC AME8814OEEY AKZww 3.1V SOT-26 -40OC to +85OC Please consult AME sales office or authorized Rep./Distributor for other output voltage and package type availability. 3 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 n Absolute M aximum Ratings: Parameter Maximum Unit 8 V Output Current P D / (V IN - V O ) mA Output Voltage GND - 0.3 to V IN + 0.3 V Input Voltage ESD Classification B n Recommended operating Conditions: Parameter Rating Unit Ambient Temperature Range -40 to +85 o C Junction Temperature -40 to +125 o C n T hermal Information Parameter Thermal Resistance (θja) Package Maximum SOT-26 260 Unit o Thermal Resistance (θja) Internal Power Dissipation (P D ) (∆ T = 100oC) Internal Power Dissipation (P D ) (∆ T = 100oC) Maximum Junction Temperature SOT-26W 260 SOT-26 380 C/W mW SOT-26W 380 150 o Maximum Lead Temperature ( 10 Sec) 4 C 300 Caution: Stress above the listed absolute rating may cause permanent damage to the device Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO n Electrical Specifications TA = 25 o C unless otherwise noted Parameter Symbol Input Voltage V IN Output Voltage Accuracy VO Dropout Voltage V DROPOUT Test Condition Min IO=1mA Typ Max Units Note 1 7 V -1.5 1.5 % 1.2V<V O(NOM)<=2.0V IO =300mA V O=V ONOM -2.0% 1300 See chart 2.0V<V O(NOM)<=2.8V 2.8V<V O(NOM) Output Current 400 mV 300 IO V O>1.2V 300 Current Limit ILIM V O>1.2V 300 Short Circuit Current ISC V O<0.8V 150 300 mA Quiescent Current IQ IO=0mA 30 50 µA Ground Pin Current IGND IO=1mA to 300mA 35 Line Regulation Load Regulation REGLINE REGLOAD Over Temerature Shutdown IO=1mA V IN =V O+1 to V O+2 V O < 2.0V -0.15 2.0V<=V O < 4.0V -0.1 4.0V <= Vo IO=1mA to 300mA mA 450 % 0.02 0.1 % -0.4 0.2 0.4 % -1 0.2 1 150 o OTH 30 V O Temperature Coefficient TC 30 PSRR Output Voltage Noise eN CO=2.2µF f=10Hz to 100kHz IO=10mA % o Over Temerature Hysterisis Power Supply Rejection µA 0.15 OTS f=1kHz 50 f=10kHz 20 f=100kHz 15 Co=2.2µF 30 IO =100mA mA C C ppm/ oC dB µVrms V EH V IN =2.7V to 7V 2.0 Vin V V EL V IN =2.7V to 7V 0 0.4 V IEH V EN =V IN , V IN =2.7V to 7V 0.1 µA IEL V EN =0V, V IN =2.7V to 7V 0.5 µA Shutdown Supply Current ISD V IN =5V, V O=0V, V EN <V EL 1 µA Shutdown Output Voltage V O,SD IO=0.4mA, V EN <V EL 0.4 V Output Under Voltage V UV Output Over Voltage V OV EN Input Threshold EN Input Bias Current 0.5 0 2.5V <=Vo <= 5.0V 85 1.2V <= Vo < 2.5V 75 2.5V <=Vo <= 5.0V 115 1.2V <= Vo < 2.5V 125 %V O(NOM) %V O(NOM) PG Leakage Current ILC V PG =7V 1 µA PG Voltage Rating V PG V O in regulation 7 V PG Voltage Low V OL ISINK=0.4mA 0.4 V Note1:V IN(min)=V OUT+V DROPOUT 5 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 n Detailed Description The AME8803 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, thermal shutdown, and Power Good detection circuitry. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or the current exceeds 300mA. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. A third capacitor can be connected between the BYPASS pin and GND. This capacitor can be a low cost Polyester Film variety between the value of 0.001 ~ 0.01µF. A larger capacitor improves the AC ripple rejection, but also makes the output come up slowly. This "Soft" turn-on is desirable in some applications to limit turn-on surges. All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection. n Enable The Enable pin normally floats high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much like an electronic switch. The AME8803 switches from voltage mode to current mode when the load exceeds the rated output current. This prevents over-stress. The AME8803 also incorporates current foldback to reduce power dissipation when the output is short circuited. This feature becomes active when the output drops below 0.8volts, and reduces the current flow by 65%. Full current is restored when the voltage exceeds 0.8 volts. n Power Good n External Capacitors The AME8803 includes the Power Good feature. Normally, Pin 4 is "Floating", however, when the output is not within ±10% of the specified voltage, it pulls low. This can occur under the following conditions: The AME8803 is stable with an output capacitor to ground of 2.2µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect. 6 1) 2) 3) 4) Input Voltage too low. During Over-Temperature. During Over-Current. If output is pulled up. Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO Load Step ( 1mA-300mA) Ground Current vs. Input Voltage Vo(5mV/DIV) 45 35 85 O C 30 Output C L =2.2µF C I N =2.2µF 25 25 O C 20 IL(200mA/DIV) µA) Ground Current (µ 40 15 10 5 IL o a d 0 0 0 1 2 3 4 5 6 7 TIME( 20mS/DIV) 8 Input Voltage (V) C L =2µF R L =10Ω C B Y P =1000pF Enable (2V/DIV) Chip Enable Transient Response Output (1V/DIV) 0 C L =2µF R L =10Ω 0 Output (1V/DIV) Enable (2V/DIV) Chip Enable Transient Response 0 0 TIME ( 1mS/DIV) TIME ( 1mS/DIV) Drop Out Voltage vs Load Current Drop Out Voltage vs Output Voltage 250 Dropout Voltage (mV) Drop Out Voltage (mV) 300 250 200 IL O A D= 3 0 0 m A 150 IL O A D = 2 0 0 m A 100 IL O A D = 1 0 0 m A 50 Top to bottom V O U T =2.5V V O U T =2.8V V O U T =3.0V V O U T =3.3V V O U T =3.5V V O U T =3.8V 200 150 100 50 0 0 2.5 2.75 3 3.25 3.5 Output Voltage (V) 3.75 4 0 50 100 150 200 Load Current (mA) 250 300 7 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 Power Supply Rejection Ratio Power Supply Rejection Ratio -20 0 -30 -20 -40 1mA -50 PSRR (dB) PSRR (dB) -10 100mA C L =2.2µF Tantalum C B Y P =1000pF 100mA -60 100mA C L =2.2µF Tantalum C B Y P =0 -30 -40 -50 10mA 100mA -60 10mA -70 100µA -80 1.0E+01 -70 1.0E+03 1.0E+05 -80 1.0E+01 1.0E+07 Frequency (Hz) Power Supply Rejection Ratio -40 C BYP = 0 C B Y P = 100 pF -30 C L = 10 µF Tantalum I L = 100 mA -40 C B Y P = 100 pF C L = 5.6 µF Ceramic I L = 100 mA -50 -60 C B Y P = 1 nF C B Y P = 1 nF -70 -70 C B Y P = 10 nF -80 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 -80 1.0E+01 C B Y P = 10 nF 1.0E+02 1.0E+03 1.0E+04 1.0E+05 Frequency (Hz) Overtemperature Shutdown I OUT (200mA/DIV) Short Circuit Response ILOAD (400mA/DIV) C BYP = 0 -20 Frequency (Hz) R L O A D =100Ω R S H O R T =0.1Ω 0 R L O A D =6.6Ω VOUT (1V/DIV) VOUT (1V/DIV) 0 0 0 TIME (2mS/DIV) 8 1.0E+07 Power Supply Rejection Ratio -50 -60 1.0E+05 -10 PSRR ( dB) PSRR ( dB) -30 1.0E+03 Frequency (Hz) -10 -20 1mA 100 µA 100 µA 100µA TIME (0.5Sec/DIV) Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO Noise Measurement IOUT (200mA/DIV) Current Limit Response R L O A D =3.3Ω Vo (1mV/ DIV) 0 VOUT (1V/DIV) CL = 2.2µF NO FILTER 0 TIME (2mS/DIV) TIME (20mS/DIV) Transient Line Response VO (1mV/DIV) VIN DC = 5.0V CL = 2.2µF Output Current (mA) VIN (1V/DIV) Safe Operating Area 300 SOT-23-5 100 10 0.1 TIME (2mS/DIV) 1.0 8.0 Input-Output Voltage Differential (V) 9 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 Stability vs. ESR vs I LOAD 10000 Stability vs. ESR vs I LOAD 10000 Unstable Region Unstable Region 1000 1000 C L =1µF 10 Stable Region 1 C L =2µF 100 Ω) ESR (Ω Ω) ESR (Ω 100 10 Stable Region 1 0.1 0.1 Untested Region 0 50 100 150 Untested Region 0.01 0.01 0 200 50 10000 Unstable Region Unstable Region 1000 1000 Ω) ESR (Ω Stable Region 1 C L =10µF 100 C L =3µF 100 Ω) ESR (Ω 200 Stability vs. ESR vs I LOAD Stability vs. ESR vs I LOAD 10000 10 Stable Region 1 0.1 0.1 0.01 Untested Region 0.01 0 50 100 ILOAD (mA) 10 150 ILOAD (mA) ILOAD (mA) 10 100 150 Untested Region 0.001 200 0 50 100 ILOAD (mA) 150 200 Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO Load Regulation vs. Temp. 35 0.58 34 0.56 Load Regulation (%) Quiescent Current @ 5V (uA) Quiescent Current vs. Temp. 33 32 31 30 29 28 27 0.54 0.52 0.50 0.48 0.46 0.44 0.42 0.40 -45 -5 25 55 85 -45 Temperature (0C) EN pin LO bias current (uA) Shut Down Current (uA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 55 0 -0.30 -0.35 -0.40 -0.45 -0.50 -5 85 0.45 210 0.40 PG VOL @ 0.4mA (V) 220 190 180 170 160 55 85 PG VOL vs. Temp. Dropout Voltage vs. Temp. 200 25 Temperature (0C) Temperature ( C) Dropout Voltage @ 300mA (mV) 85 -0.25 -45 25 55 -0.20 0.0 -5 25 EN pin LO bias Current vs. Temp. Shut Down Current vs. Temp. -45 -5 Temperature (0C) 0.35 0.30 0.25 0.20 0.15 150 -45 -5 25 55 0 Temperature ( C) 85 -45 -5 25 55 85 Temperature (0C) 11 Analog Microelectronics, Inc. 300mA CMOS LDO AME8803/8814 n Package Dimension SOT-26 SYM BOLS A A1 A2 b C D E e H L θ1 S1 M ILLIM ETERS M IN M AX 1.00 1.40 0.00 0.15 0.70 1.25 0.35 0.50 0.08 0.25 2.70 3.10 1.40 1.80 1.90 BSC INCHES M IN M AX 0.0394 0.0551 0.0000 0.0591 0.0276 0.0492 0.0138 0.0197 0.0031 0.0098 0.1063 0.1220 0.0551 0.0709 0.0748 BSC 2.60 0.35 0.1024 0.0138 ° 0 0.85 3.00 ° 9 1.05 ° 0 0.0335 0.1181 ° 9 0.0413 SOT-26 (Wide) SYMBOLS A A1 A2 b C D E e H L θ1 S1 12 MILLIMETERS MIN MAX 1.00 1.30 0.00 0.10 1.00 1.40 0.35 0.50 0.10 0.25 2.70 3.10 1.60 2.00 2.60 3.00 0.37 ° ° 1 9 0.85 1.05 INCHES MIN MAX 0.0937 0.0512 0.000 0.0039 0.0937 0.0551 0.0138 0.0197 0.0039 0.0098 0.1063 0.1220 0.0630 0.0787 0.1024 0.1181 0.0146 ° ° 1 9 0.0335 0.0413 www.analogmicro.com E-Mail: [email protected] Life Support Policy: These products of Analog Microelectronics, Inc. are not authorized for use as critical components in lifesupport devices or systems, without the express written approval of the president of Analog Microelectronics, Inc. Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. Analog Microelectronics, Inc., August 2001 Document: 2006-DS8803/8814-E Corporate Headquarters Asia Pacific Headquarters Analog Microelectronics, Inc. AME, Inc. 3100 De La Cruz Blvd. Suite 201 Santa Clara, CA. 95054-2046 2F, 187 Kang-Chien Road, Nei-Hu District Taipei 114, Taiwan, R.O.C. Tel : (408) 988-2388 Fax: (408) 988-2489 Tel : 886 2 2627-8687 Fax : 886 2 2659-2989