Samsung K6X8016T3B-TF55 512kx16 bit low power full cmos static ram Datasheet

K6X8016T3B Family
CMOS SRAM
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No. History
Draft Date
Remark
0.0
Initial draft
October 31, 2002
Preliminary
0.1
Revised
- Deleted 44-TSOP2-400R package type.
December 11, 2002
Preliminary
1.0
Finalized
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 45mA to 30mA
- Changed ISB1(industrial) from 30µA to 15µA
- Changed ISB1(Automotive) from 40µA to 25µA
September 16, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
512Kx16 bit Low Power Full CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state outputs
• Package Type: 44-TSOP2-400F
The K6X8016T3B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
various operating temperature range for user flexibility of system design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
K6X8016T3B-F
Industrial(-40~85°C)
K6X8016T3B-Q
Automotive(-40~125°C)
Vcc Range
2.7~3.6V
Speed
Standby
(ISB1, Max)
551)/70ns
15µA
70ns
25µA
Operating
(ICC2, Max)
30mA
PKG Type
44-TSOP2-400F
1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-TSOP2
Forward
FUNCTIONAL BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
A9
A10
A11
A12
A13
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Addresses
I/O1~I/O8
Row
select
Data
cont
Memory array
1024 rows
512×16 columns
I/O Circuit
Column select
Data
cont
I/O9~I/O16
Data
cont
Name
Function
Name
Function
Column Addresses
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O9~16)
Address Inputs
LB
Lower Byte(I/O1~8)
A0~A18
I/O1~I/O16 Data Inputs/Outputs
CS
OE
WE
Control Logic
UB
LB
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K6X8016T3B-TF55
K6X8016T3B-TF70
Automotive Temperature Products(-40~125°C)
Function
1)
Part Name
44-TSOP2-F, 55ns, Low Low Power
44-TSOP2-F, 70ns, Low Low Power
K6X8016T3B-TQ70
Function
44-TSOP2-F, 70ns, Low Power
1. Operating voltage range is 3.0~3.6V
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
I/O1~8
I/O9~16
Mode
Power
H
X
X
X
X
High-Z
High-Z
Deselected
Standby
L
H
H
X
X
High-Z
High-Z
Output Disabled
Active
H
High-Z
High-Z
Output Disabled
Active
H
Dout
High-Z
Lower Byte Read
Active
L
X
X
H
L
L
H
L
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
L
L
L
Din
Din
Word Write
Active
Note: X means don′t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN,VOUT
-0.2 to VCC+0.3 (max. 3.9V)
V
-
Voltage on Vcc supply relative to
VCC
-0.2 to 3.9
V
-
Power Dissipation
PD
1.0
W
-
TSTG
-65 to 150
°C
-
-40 to 85
°C
K6X8016T3B-F
-40 to 125
°C
K6X8016T3B-Q
Storage temperature
Operating Temperature
TA
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Symbol
Min
Typ
Max
Unit
Supply voltage
Item
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.32)
V
Input low voltage
VIL
-0.33)
-
0.6
V
Note:
1. Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width ≤30ns.
3. Undershoot: -3.0V in case of pulse width ≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Symbol
Test Condition
Min
Max
Unit
Input capacitance
Item
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS=VIL, WE=VIH, VIN=VIH or VIL
-
-
2
mA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V, VIN≤0.2V or
VIN≥VCC-0.2V
-
-
3
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, VIN=VIL or VIH
-
-
30
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
Average operating current
Standby Current(CMOS)
ISB1
CS≥Vcc-0.2V, Other inputs=0~Vcc
4
-
-
0.4
mA
K6X8016T3B-F
-
-
15
µA
K6X8016T3B-Q
-
-
25
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL=50pF+1TTL
CL1)
1.Including scope and jig capacitance
AC CHARACTERISTICS (VCC=2.7~3.6V, Industrial product:TA=-40 to 85°C, Automotive product:TA=-40 to 125°C)
Speed Bins
Parameter List
Symbol
55ns
Min
Read
Write
Units
70ns
1)
Max
Min
Max
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
LB, UB enable to low-Z output
tBLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
25
ns
Output Disable to High-Z Output
tOHZ
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
ns
LB, UB valid to data output
tBA
-
25
-
35
ns
UB, LB disable to high-Z output
tBHZ
0
20
0
25
ns
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
55
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
25
ns
Data to write time overlap
tDW
20
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
LB, UB valid to end of write
tBW
45
-
60
-
ns
1. Voltage range is 3.0V~3.6V for industrial product.
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR
CS≥Vcc-0.2V
Data retention current
IDR
Vcc=1.5V, CS≥Vcc-0.2V
Data retention set-up time
tSDR
Recovery time
tRDR
See data retention waveform
5
Min
Typ
Max
Unit
1.5
-
3.6
V
K6X8016T3B-F
-
-
6
µA
K6X8016T3B-Q
-
-
10
0
-
-
5
-
-
ms
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO
CS
tHZ
tBA
UB, LB
tBHZ
tOE
OE
Data out
High-Z
tOLZ
tBLZ
tLZ
tOHZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tWR(4)
tCW(2)
CS
tAW
tBW
UB, LB
tWP(1)
WE
tAS(3)
tDW
Data in
High-Z
tDH
tWHZ
Data out
High-Z
Data Valid
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
tWC
Address
tAS(3)
tCW(2)
tWR(4)
CS
tAW
tBW
UB, LB
tWP(1)
WE
tDW
Data Valid
Data in
Data out
tDH
High-Z
High-Z
7
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
tWC
Address
tCW(2)
tWR(4)
CS
tAW
tBW
UB, LB
tAS(3)
tWP(1)
WE
tDW
Data Valid
Data in
Data out
tDH
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
tSDR
Data Retention Mode
tRDR
2.7V
2.2V
VDR
CS≥VCC - 0.2V
CS
GND
8
Revision 1.0
September 2003
K6X8016T3B Family
CMOS SRAM
PACKAGE DIMENSIONS
Unit: millimeters(inches)
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0~8°
0.25
(
)
0.010
#44
#23
10.16
0.400
0.45 ~0.75
0.018 ~ 0.030
11.76±0.20
0.463±0.008
( 0.50 )
0.020
#1
#22
1.00±0.10
0.039±0.004
1.20
MAX.
0.047
( 0.805 )
0.032
0.35± 0.10
0.014±0.004
0.80
0.0315
0.05
MIN.
0.002
18.81
MAX.
0.741
18.41±0.10
0.725±0.004
9
0
+ 0.1
5
- 0.0
04
.0
+0
02
.006 - 0.0
0.15
0
0.10
0.004 MAX
Revision 1.0
September 2003
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