Fast Recovery Diodes (FRD) MA3D690 Silicon planar type Unit : mm For high-frequency rectification 4.6 ± 0.2 15.0 ± 0.5 ■ Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end 2.9 ± 0.2 3.0 ± 0.5 9.9 ± 0.3 2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 0.55 ± 0.15 5.08 ± 0.5 2.54 ± 0.3 ■ Absolute Maximum Ratings Ta = 25°C 1 Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 200 V Non-repetitive peak reverse surge voltage VRSM 200 V Average forward current IF(AV) 5 A Non-repetitive peak forward surge current* IFSM 30 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Internal Connection 1 2 Note) * : Half sine-wave; 10 ms/cycle ■ Electrical Characteristics Ta = 25°C Parameter Symbol Repetitive peak reverse current Conditions Typ Max Unit IRRM1 VRRM = 200 V, TC = 25°C 20 µA IRRM2 VRRM = 200 V, Tj = 150°C 2 mA Forward voltage (DC) VF IF = 5 A, TC = 25°C Reverse recovery time* trr IF = 1 A, IR = 1 A Thermal resistance Min 0.98 V 45 ns Rth(j-c) 3 °C/W Rth(j-a) 63 °C/W Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg × cm 3. * : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3D690 Fast Recovery Diodes (FRD) IF V F 100°C 25°C Ta = 150°C IR VR 10 000 Ta = 150°C 1.4 −20°C 1 000 Forward voltage VF (V) 1 Forward current IF (A) VF Ta 1.6 0.1 0.01 Reverse current IR (nA) 10 1.2 1.0 IF = 5 A 0.8 2.5 A 0.6 1A 0.4 100°C 100 10 25°C 1 0.001 0.2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.1 0 1 120 160 Ambient temperature Ta 200 (°C) IF(AV) TC Average forward current IF(AV) (A) 6 t0 / t1 = 1/2 5 1/3 DC 1/6 4 3 2 1 t0 t1 0 20 40 60 80 100 120 140 160 Case temperature TC (°C) 2 0 40 80 120 160 200 240 Reverse voltage VR (V) PD(AV) IF(AV) 12 200 100 0 80 200 f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) Reverse current IR (µA) 10 40 160 Ct VR 100 0 120 300 VR = 200 V 100 V 10 V 1 000 0.1 −40 80 Ambient temperature Ta (°C) IR T a 10 000 40 0 50 100 150 200 250 Reverse voltage VR (V) 300 Average forward power PD(AV) (W) 0.000 1 t0 t1 10 8 t0 / t1 = 1/6 6 1/3 1/2 DC 4 2 0 0 1 2 3 4 5 6 Average forward current IF(AV) (A)