Diotec BCP54 Surface mount si-epitaxial planartransistor Datasheet

BCP 54, BCP 55, BCP 56
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
±0.2
6.5
±0.1
3
1.65
0.7
2.3
2
±0.2
3.5
±0.3
7
1
1.3 W
Plastic case
Kunststoffgehäuse
4
3
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
NPN
SOT-223
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCP 54
BCP 55
BCP 56
Collector-Emitter-voltage
B open
VCE0
45 V
60 V
80 V
Collector-Base-voltage
E open
VCB0
45 V
60 V
100 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
1.3 W 1)
Collector current – Kollektorstrom (DC)
IC
1A
Peak Collector current – Koll.-Spitzenstrom
ICM
1.5 A
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
ICB0
–
–
100 nA
IE = 0, VCB = 30 V, Tj = 125/C
ICB0
–
–
10 :A
IEB0
–
–
100 nA
–
–
500 mV
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
1
VCEsat
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
26
01.11.2003
General Purpose Transistors
BCP 54, BCP 55, BCP 56
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 2 V, IC = 150 mA
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 500 mA
BCP 5x-6
hFE
40
–
100
BCP 5x-10
hFE
63
–
160
BCP 5x-16
hFE
100
–
250
hFE
BCP 54...
BCP56 hFE
63
–
–
40
–
–
VBEon
–
–
1V
fT
–
130 MHz
–
hFE1'hFE2
–
–
1.6
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 2 V, IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
DC current gain ratio of the complement. pairs
Verhältnis der Stromverst. complement. Paare
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
RthA
95 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
RthS
14 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCP 51, BCP 52, BCP 53
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
27
Similar pages