MMBFJ309 / MMBFJ310 J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR 1 D N-CHANNEL 3 For VHF/UHF Applications G S 2 1 2 3 DEVICE MARKING MMBFJ309 = B9J; MMBFJ310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Symbol Value Units Drain to Source Voltage V DS 25 V Gate to Source Voltage V GS 25 V IG 10 mAdc Gate Current THERMAL RATINGS Symbol Value Units Pd 225 mW R JA 556 °C/W Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Rating Power Dissipation (Note 1) Thermal Resistance - Junction to Ambient (Note 1) Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout 9/19/2005 Page 1 www.panjit.com MMBFJ309 / MMBFJ310 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) OFF CHARACTERISTICS Parameter Min Typical Max Units -25 - - V - - -1.0 nA VGS = -15Vdc TJ =125°C - - -1.0 µA VDS = 10Vdc I DS = 1.0nAdc -1.0 - -4.0 V -2.0 - -6.5 V Conditions Min Typical Max Units VDS = 10Vdc VGS = 0Vdc 12 - 30 mA 24 - 60 mA VGS(f) I G = 1.0 mA, VDS = 0 - - 1.0 V Symbol Conditions Min Typical Max Units 8.0 - 18 mmhos - - 250 µmhos - - 5.0 pF - - 2.5 pF - 10 - nV / Hz Symbol Gate-Source Breakdown Voltage V(BR)GSS Gate Reverse Current I GSS Conditions I G = -1.0 µA, VDS = 0 VGS = -15Vdc Gate-Source Cutoff Voltage MMBFJ309 VGS (off) MMBFJ310 ON CHARACTERISTICS Parameter Symbol Zero Gate Current Drain Current I DSS MMBFJ309 MMBFJ310 Gate-Source Forward Voltage SMALL-SIGNAL CHARACTERISTICS Parameter Forward Transfer Admittance Yfs Output Admittance y os Input Capacitance C iss Reverse Transfer Capacitance C rss Equivalent Short-Circuit Input Noise Voltage 9/19/2005 en I D = 10 mA, VDS = 10 V f = 1.0 kHz I D = 10 mA, VDS = 10 V f = 1.0 kHz V GS = -10V, VDS = 0V f = 1.0 MHz V GS = -10V, VDS = 0V f = 1.0 MHz I D = 10 mA, VDS = 10 V f = 100 Hz Page 2 www.panjit.com MMBFJ309 / MMBFJ310 PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT 9/19/2005 Page 3 www.panjit.com