MOTOROLA MC74HCXXXADW Highâ performance siliconâ gate cmo Datasheet

SEMICONDUCTOR TECHNICAL DATA
High–Performance Silicon–Gate CMOS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
The MC54/74HC245A is identical in pinout to the LS245. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
The HC245A is a 3–state noninverting transceiver that is used for 2–way
asynchronous communication between data buses. The device has an
active–low Output Enable pin, which is used to place the I/O ports into
high–impedance states. The Direction control determines whether data
flows from A to B or from B to A.
1
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
1
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 308 FETs or 77 Equivalent Gates
A2
A3
A
DATA
PORT
A4
A5
A6
A7
A8
DIRECTION
OUTPUT ENABLE
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
1
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
LOGIC DIAGRAM
A1
Ceramic
Plastic
SOIC
PIN ASSIGNMENT
2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
B1
DIRECTION
1
20
VCC
B2
A1
2
19
OUTPUT ENABLE
A2
3
18
B1
B3
B4
B5
B
DATA
PORT
B6
B7
B8
1
19
A3
4
17
B2
A4
5
16
B3
A5
6
15
B4
A6
7
14
B5
A7
8
13
B6
A8
9
12
B7
10
11
B8
GND
PIN 10 = GND
PIN 20 = VCC
FUNCTION TABLE
Control Inputs
Output
Enable
Direction
L
L
Data Transmitted from Bus B to Bus A
L
H
Data Transmitted from Bus A to Bus B
H
X
Buses Isolated (High–Impedance State)
X = don’t care
10/95
 Motorola, Inc. 1995
1
Operation
REV 6
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MC54/74HC245A
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
VI/O
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
II/O
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
v
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
DC Supply Voltage (Referenced to GND)
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
VOH
Vin = VIH or VIL |Iout|
|Iout|
VOL
Iin
IOZ
6.0 mA
7.8 mA
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
Maximum Input Leakage Current
Vin = VIH or VIL |Iout|
6.0 mA
|Iout|
7.8 mA
Vin = VCC or GND, Pin 1 or 19
6.0
± 0.1
± 1.0
± 1.0
µA
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND, I/O Pins
6.0
± 0.5
± 5.0
± 10
µA
Maximum Three–State
Leakage Current
V
Vin = VCC or GND
6.0
4
40
160
µA
Iout = 0 µA
NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
ICC
MOTOROLA
Maximum Quiescent Supply
Current (per Package)
2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC245A
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tPLH,
tPHL
Maximum Propagation Delay, A to B, B to A
(Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Direction or Output Enable to A or B
(Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to A or B
(Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
Cin
Maximum Input Capacitance (Pin 1 or Pin 19)
—
10
10
10
pF
Maximum Three–State I/O Capacitance
(I/O in High–Impedance State)
—
15
15
15
pF
Symbol
Cout
Parameter
Unit
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Transceiver Channel)*
pF
40
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
VCC
50%
DIRECTION
GND
VCC
tr
OUTPUT
ENABLE
tf
INPUT
A OR B
VCC
90%
50%
10%
GND
tPZL
GND
tPLH
tPHL
A OR B
90%
50%
10%
OUTPUT
B OR A
50%
tPHZ
50%
10%
VOL
90%
VOH
HIGH
IMPEDANCE
tTHL
tTLH
HIGH
IMPEDANCE
50%
tPZH
A OR B
tPLZ
Figure 1.
Figure 2.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
* Includes all probe and jig capacitance
Figure 3.
High–Speed CMOS Logic Data
DL129 — Rev 6
1 kΩ
Figure 4.
3
MOTOROLA
MC54/74HC245A
EXPANDED LOGIC DIAGRAM
A1
2
18
A2
3
17
A3
15
OUTPUT ENABLE
MOTOROLA
B6
B7
9
11
DIRECTION
B5
8
12
A8
B
DATA
PORT
7
13
A7
B4
6
14
A6
B3
5
A
DATA
PORT
A5
B2
4
16
A4
B1
B8
1
19
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC245A
OUTLINE DIMENSIONS
20
11
1
10
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
A
L
C
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
N
H
G
D
J
K
M
MILLIMETERS
MIN
MAX
23.88
25.15
6.60
7.49
3.81
5.08
0.38
0.56
1.40
1.65
2.54 BSC
0.51
1.27
0.20
0.30
3.18
4.06
7.62 BSC
0_
15 _
0.25
1.02
INCHES
MIN
MAX
0.940
0.990
0.260
0.295
0.150
0.200
0.015
0.022
0.055
0.065
0.100 BSC
0.020
0.050
0.008
0.012
0.125
0.160
0.300 BSC
0_
15_
0.010
0.040
SEATING
PLANE
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
DIM
A
B
C
D
E
F
G
J
K
L
M
N
K
SEATING
PLANE
M
N
E
G
F
J
D
0.25 (0.010)
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
High–Speed CMOS Logic Data
DL129 — Rev 6
K
SEATING
PLANE
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
5
MOTOROLA
MC54/74HC245A
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USA/EUROPE: Motorola Literature Distribution;
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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] –TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MOTOROLA
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CODELINE
6
*MC54/74HC245A/D*
MC54/74HC245A/D
High–Speed CMOS Logic Data
DL129 — Rev 6
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