Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 1/9 CYStech Electronics Corp. 30V N-Channel Enhancement Mode MOSFET MTN007N03LS3 Features • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package Symbol BVDSS ID RDSON@VGS=4.5V, ID=400mA RDSON@VGS=2.5V,ID=250mA RDSON@VGS=1.8V,ID=150mA 30V 780mA 310mΩ(typ) 440mΩ(typ) 580mΩ(typ) Outline MTN007N03LS3 SOT-323 D G：Gate S：Source D：Drain G S Ordering Information Device MTN007N03LS3-0-T1-G MTN007N03LS3 Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Limits 30 ±8 780 620 3.5 0.35 ID IDM PD ESD susceptibility Operating Junction and Storage Temperature Tj, Tstg Unit V mA A W 0.003 1000 (Note 4) -55~+150 W/°C V °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10 seconds. 4. Human body model, 1.5kΩ in series with 100pF. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Symbol Limit Unit Rth,ja 360 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤10 seconds. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss MTN007N03LS3 Min. Typ. Max. Unit 30 0.5 - 0.02 0.75 310 440 580 1.2 1.0 ±5 1 10 400 600 750 - V V/°C V - 58 10 6 - Test Conditions S VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0 (Tj=70°C) VGS=4.5V, ID=400mA VGS=2.5V, ID=250mA VGS=1.8V, ID=150mA VDS=5V, ID=400mA pF VDS=15V, VGS=0, f=1MHz μA mΩ CYStek Product Specification CYStech Electronics Corp. td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD - 6 7 14 4 1.4 0.2 0.5 - - 0.74 1.2 Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 3/9 ns VDS=15V, ID=400mA, VGS=4.5V, RG=6Ω nC VDS=24V, ID=780mA, VGS=4.5V V VGS=0V, IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN007N03LS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 3.5 5V 4.5V 4V VGS=3.5V 2.5 VGS=3V 2.0 VGS=2.5V 1.5 1.0 ID=250μA, VGS=0V BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 3.0 VGS=2V 1.2 1 0.8 0.5 VGS=1.5V 0.0 0 1 2 3 VDS, Drain-Source Voltage(V) 4 0.6 -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1600 1 Tj=25°C 1200 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1400 VGS=1.8V VGS=2.5V 1000 800 600 400 200 VGS=0V 0.8 0.6 Tj=150°C 0.4 0.2 VGS=4.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, Drain Current(A) 0.8 0.9 0 1 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2 900 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=400mA 800 700 600 500 400 300 200 100 1.8 VGS=4.5V, ID=400mA 1.6 1.4 1.2 1 0.8 0.6 0.4 0 0 MTN007N03LS3 1 2 3 4 VGS, Gate-Source Voltage(V) 5 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance---(pF) 100 VGS(th) , Normalized Threshold Voltage Capacitance vs Drain-to-Source Voltage Ciss C oss 10 Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Gate Charge Characteristics 10 20 VDS=24V Power (W) 15 VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=360°C/W 10 5 0 0.001 8 VDS=15V 6 4 2 ID=780mA 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.5 1 1.5 2 Qg, Total Gate Charge(nC) 2.5 3 Maximum Drain Current vs JunctionTemperature 10 1 1ms 10ms 0.1 TA=25°C, Tj=150°C, VGS=4.5V, RθJA=360°C/W Single Pulse 100ms DC 0.01 0.01 MTN007N03LS3 0.1 1 10 VDS, Drain-Source Voltage(V) ID, Maximum Drain Current(A) 0.9 100μs ID, Drain Current (A) VDS=10V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA=25°C, VGS=4.5V, RθJA=360°C/W 0.1 0 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.4 3.5 VDS=5V PD, Power Dissipation(W) ID, Drain Current (A) 3 2.5 2 1.5 1 Mounted on FR-4 board with 1 in² pad area 0.3 0.2 0.1 0.5 0 0 0 1 2 3 4 VGS , Gate-Source Voltage(V) 0 5 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=360 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Forward Transfer Admittance vs Drain Current GFS, Forward Transfer Admittance(S) 10 1 0.1 VDS =5V Ta=25°C Pulsed 0.01 0.001 MTN007N03LS3 0.01 0.1 ID, Drain Current(A) 1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN007N03LS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN007N03LS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C867S3 Issued Date : 2012.10.12 Revised Date : 2013.09.09 Page No. : 9/9 SOT-323 Dimension TE CH □□ Marking: Date Code 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN007N03LS3 CYStek Product Specification