INCHANGE Semiconductor MBR40H100WT Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT 100 V VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current (Rated VR)TC= 150℃ 20 A IFRM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz)TC= 145℃ 40 A 200 A Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs IFSM TJ Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MBR40H100WT Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W MAX UNIT 0.80 0.67 0.90 0.76 V 0.01 10.0 mA ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2.0%) SYMBOL PARAMETER CONDITIONS IF= 20A, TC= 25℃ VF Maximum Instantaneous Forward Voltage IF= 20A, TC=125℃ IF= 40A, TC= 25℃ IF= 40A, TC= 125℃ IR Maximum Instantaneous Reverse Current isc website：www.iscsemi.com Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 125℃ 2 isc & iscsemi is registered trademark