Freescale GJM1555C1H5R6DB01D Enhancement mode phemt technology (e-phemt) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MMG15241H
Rev. 0, 12/2010
Enhancement Mode pHEMT
Technology (E--pHEMT)
MMG15241HT1
High Linearity Amplifier
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain.
500--2800 MHz, 15.9 dB
24 dBm
E--pHEMT
Features
• Frequency: 500--2800 MHz
• Noise Figure: 1.6 dB @ 2140 MHz
• P1dB: 24 dBm @ 2140 MHz
• Small--Signal Gain: 15.9 dB @ 2140 MHz
• Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz
• Single 5 Volt Supply
• Supply Current: 85 mA
• 50 Ohm Operation (some external matching required)
• Low Cost SOT--89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
900
MHz
2140
MHz
2600
MHz
Unit
Noise Figure
NF
1.2
1.6
1.3
dB
Input Return Loss
(S11)
IRL
--11.8
--21.3
--16.9
dB
Output Return Loss
(S22)
ORL
--13.4
--16.2
--20.9
dB
Small--Signal Gain
(S21)
Gp
20.5
15.9
14.4
dB
Power Output @
1dB Compression
P1db
24
24
24
dBm
Third Order Input
Intercept Point
IIP3
18.2
23.5
26.2
dBm
Third Order Output
Intercept Point
OIP3
38.7
39.4
40.6
dBm
Characteristic
CASE 2142--01
SOT--89A
PLASTIC
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
130
mA
RF Input Power
Pin
13
dBm
Storage Temperature Range
Tstg
--65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VDD = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied
Symbol
Value (3)
Unit
RθJC
59
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG15241HT1
1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
14
15.9
—
dB
Input Return Loss (S11)
IRL
—
--21.3
—
dB
Output Return Loss (S22)
ORL
—
--16.2
—
dB
Power Output @ 1dB Compression
P1dB
—
24
—
dBm
IIP3
—
23.5
—
dBm
Third Order Output Intercept Point
OIP3
—
39.4
—
dBm
Reverse Isolation (S12)
|S12|
—
--22.5
—
dB
NF
—
1.6
—
dB
Supply Current (1)
IDD
65
85
105
mA
(1)
VDD
—
5
—
V
Characteristic
Third Order Input Intercept Point
Noise Figure
Supply Voltage
1. For reliable operation, the junction temperature should not exceed 150°C.
Table 5. Functional Pin Description
Pin
Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
2
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
2 (Minimum)
Machine Model (per EIA/JESD 22--A115)
B (Minimum)
Charge Device Model (per JESD 22--C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG15241HT1
2
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
10
TC = 25°C
21
0
S11
--40°C
S11, S22 (dB)
Gp, SMALL--SIGNAL GAIN (dB)
25
85°C
17
13
--10
S22
--20
VDD = 5 Vdc
9
0
0.5
1
1.5
2
VDD = 5 Vdc
--30
2.5
3
0
0.5
1
1.5
2
2.5
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency(1)
Figure 3. Input/Output Return Loss versus
Frequency(1)
3
1. Test fixture characteristics have been mathematically removed from the graphical data.
MMG15241HT1
RF Device Data
Freescale Semiconductor
3
50 OHM APPLICATION CIRCUIT: 2140 MHz
VSUPPLY
C5
Z4
C4
C1
RF
INPUT
Z1
L1
Z2
Z3
DUT
Z5
RF
OUTPUT
Z7
Z6
C3 C6
C2
Z1
Z2
Z3
Z4
0.026″ x 0.021″ Microstrip
0.168″ x 0.021″ Microstrip
0.030″ x 0.044″ Microstrip
0.200″ x 0.042″ Microstrip
Z5
Z6
Z7
0.030″ x 0.044″ Microstrip
0.172″ x 0.021″ Microstrip
0.353″ x 0.021″ Microstrip
Figure 4. MMG15241HT1 Test Circuit Schematic
Table 8. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.5 pF Chip Capacitor
GJM1555C1H1R5CB01D
Murata
C2
0.8 pF Chip Capacitor
GJM1555C1HR80BB01D
Murata
C3
0.7 pF Chip Capacitor
GJM1555C1HR70BB01D
Murata
C4
56 pF Chip Capacitor
GRM188RC1H560GA01D
Murata
C5
0.1 μF Chip Capacitor
GRM188R71H104KA93D
Murata
C6
5.6 pF Chip Capacitor
GJM1555C1H5R6DB01D
Murata
L1
30 nH Chip Inductor
0603CS--30NXJLW
Coilcraft
PCB
0.010″, εr = 3.38, Multilayer
IS680--338
Isola
MMG15241HT1
4
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2140 MHz
RFOUT
RFIN
C1
C6
C2
C3
L1
SOT--89--3B
Rev. 0
C4
C5
VDD
Figure 5. MMG15241HT1 Test Circuit Component Layout
Table 8. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.5 pF Chip Capacitor
GJM1555C1H1R5CB01D
Murata
C2
0.8 pF Chip Capacitor
GJM1555C1HR80BB01D
Murata
C3
0.7 pF Chip Capacitor
GJM1555C1HR70BB01D
Murata
C4
56 pF Chip Capacitor
GRM188RC1H560GA01D
Murata
C5
0.1 μF Chip Capacitor
GRM188R71H104KA93D
Murata
C6
5.6 pF Chip Capacitor
GJM1555C1H5R6DB01D
Murata
L1
30 nH Chip Inductor
0603CS--30NXJLW
Coilcraft
PCB
0.010″, εr = 3.38, Multilayer
IS680--338
Isola
(Component Designations and Values table repeated for reference.)
MMG15241HT1
RF Device Data
Freescale Semiconductor
5
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
--8
17
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
TC = --40°C
16
85°C
25°C
15
14
--12
TC = --40°C
25°C
--16
--20
VDD = 5 Vdc
13
2000
2075
2150
2225
2300
2150
2225
f, FREQUENCY (MHz)
Figure 6. Small--Signal Gain (S21) versus
Frequency
Figure 7. Input Return Loss (S11) versus
Frequency
2300
P1dB, 1 dB COMPRESSION POINT (dBm)
25
--10
TC = --40°C
--15
85°C
--20
25°C
VDD = 5 Vdc
--25
2000
2075
2150
2225
24
TC = --40°C
23
85°C
25°C
22
VDD = 5 Vdc
21
2040
2300
2090
2140
2190
2240
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Output Return Loss (S22) versus
Frequency
Figure 9. P1dB versus Frequency
41
2.4
TC = 25°C
40
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
2075
f, FREQUENCY (MHz)
--5
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
VDD = 5 Vdc
85°C
--24
2000
85°C
39
--40°C
38
2
TC = 85°C
1.6
25°C
1.2
--40°C
VDD = 5 Vdc
37
2040
2090
2140
2190
2240
0.8
2000
2075
VDD = 5 Vdc
2150
2225
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 10. Third Order Output Intercept
Point versus Frequency
Figure 11. Noise Figure versus Frequency
2300
MMG15241HT1
6
RF Device Data
Freescale Semiconductor
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
--15
--25
VDD = 5 Vdc, f = 2140 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
--40°C
--35
TC = 85°C
25°C
--45
--55
14
16.5
19
21.5
24
Pout, OUTPUT POWER (dBm)
Figure 12. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG15241HT1
RF Device Data
Freescale Semiconductor
7
50 OHM APPLICATION CIRCUIT: 900 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z2
Z1
Z3
C2
0.041″ x 0.058″ Microstrip
0.112″ x 0.058″ Microstrip
Z3
Z4
RF
OUTPUT
Z4
L2
C1
Z1
Z2
DUT
C5
0.090″ x 0.058″ Microstrip
0.085″ x 0.058″ Microstrip
Figure 13. MMG15241HT1 Test Circuit Schematic
Table 9. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
3.9 pF Chip Capacitor
GQM1885C2A3R9CB01
Murata
C2
0.6 pF Chip Capacitor
GQM1885C2AR60CB01
Murata
C3, C5
56 pF Chip Capacitors
GRM188RC1H560GA01D
Murata
C4
0.1 μF Chip Capacitor
GRM188R71H104KA93D
Murata
L1
30 nH Chip Inductor
0603CS--30NXJLW
Coilcraft
L2
6.8 nH Chip Inductor
0603CS--6N8XJLW
Coilcraft
R1
0 Ω, 1 A Chip Resistor
ERJ3GEY0R00V
Panasonic
PCB
0.031″, εr = 4.1
Getek Grade ML200C
GE Electromaterials
R1
C4
C3
L2
C1
L1
C5
C2
SOT--89--3A
Rev. 0
Figure 14. MMG15241HT1 Test Circuit Component Layout
MMG15241HT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
--3
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
22
21
20
19
VDD = 5 Vdc
18
750
900
975
--12
VDD = 5 Vdc
750
1050
825
900
975
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 15. Small--Signal Gain (S21) versus
Frequency
Figure 16. Input Return Loss (S11) versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
--12
--16
--20
VDD = 5 Vdc
825
900
975
25
24
23
VDD = 5 Vdc
22
800
1050
850
900
950
1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 17. Output Return Loss (S22) versus
Frequency
Figure 18. P1dB versus Frequency
40
2
39
1.5
38
37
1
0.5
VDD = 5 Vdc
36
800
1050
26
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
--9
--15
825
--8
--24
750
--6
850
900
950
1000
VDD = 5 Vdc
0
750
825
900
975
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 19. Third Order Output Intercept
Point versus Frequency
Figure 20. Noise Figure versus Frequency
1050
MMG15241HT1
RF Device Data
Freescale Semiconductor
9
50 OHM APPLICATION CIRCUIT: 2600 MHz
VSUPPLY
C5
Z3
C4
RF
INPUT
C1
L1
Z1
Z2
DUT
Z4
Z7
Z6
Z5
C3
Z1
Z2
Z3
Z4
0.149″ x 0.021″ Microstrip
0.030″ x 0.044″ Microstrip
0.200″ x 0.042″ Microstrip
0.030″ x 0.044″ Microstrip
Z5
Z6
Z7
RF
OUTPUT
C2
C6
0.166″ x 0.021″ Microstrip
0.088″ x 0.021″ Microstrip
0.215″ x 0.021″ Microstrip
Figure 21. MMG15241HT1 Test Circuit Schematic
Table 10. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.0 pF Chip Capacitor
GJM1555C1H1R0CB01D
Murata
C2
0.4 pF Chip Capacitor
GJM1555C1HR40BB01D
Murata
C3
0.2 pF Chip Capacitor
GJM1555C1HR20BB01D
Murata
C4
56 pF Chip Capacitor
GRM188RC1H560GA01D
Murata
C5
0.1 μF Chip Capacitor
GRM188R71H104KA93D
Murata
C6
10 pF Chip Capacitor
GJM1555C1H100JB01D
Murata
L1
30 nH Chip Inductor
0603CS--30NXJLW
Coilcraft
PCB
0.010″, εr = 3.38, Multilayer
IS680--338
Isola
MMG15241HT1
10
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2600 MHz
RFOUT
RFIN
C1
C2
C6
C3
L1
C4
SOT--89--3B
Rev. 0
C5
VDD
Figure 22. MMG15241HT1 Test Circuit Component Layout
Table 10. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.0 pF Chip Capacitor
GJM1555C1H1R0CB01D
Murata
C2
0.4 pF Chip Capacitor
GJM1555C1HR40BB01D
Murata
C3
0.2 pF Chip Capacitor
GJM1555C1HR20BB01D
Murata
C4
56 pF Chip Capacitor
GRM188RC1H560GA01D
Murata
C5
0.1 μF Chip Capacitor
GRM188R71H104KA93D
Murata
C6
10 pF Chip Capacitor
GJM1555C1H100JB01D
Murata
L1
30 nH Chip Inductor
0603CS--30NXJLW
Coilcraft
PCB
0.010″, εr = 3.38, Multilayer
IS680--338
Isola
(Component Designations and Values table repeated for reference.)
MMG15241HT1
RF Device Data
Freescale Semiconductor
11
50 OHM TYPICAL CHARACTERISTICS: 2600 MHz
--10
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
15
14.5
14
13.5
VDD = 5 Vdc
13
2450
2525
2600
2675
--16
VDD = 5 Vdc
2525
2600
2675
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 23. Small--Signal Gain (S21) versus
Frequency
Figure 24. Input Return Loss (S11) versus
Frequency
2750
25
P1dB, 1 dB COMPRESSION POINT (dBm)
ORL, OUTPUT RETURN LOSS (dB)
--14
--18
2450
2750
--16
--18
--20
--22
VDD = 5 Vdc
--24
2450
2525
2600
2675
24.25
23.5
22.75
VDD = 5 Vdc
22
2500
2750
2550
2600
2650
2700
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 25. Output Return Loss (S22) versus
Frequency
Figure 26. P1dB versus Frequency
42
2
40.5
1.75
NF, NOISE FIGURE (dB)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
--12
39
37.5
1.5
1.25
VDD = 5 Vdc
36
2500
2550
2600
2650
VDD = 5 Vdc
2700
1
2450
2525
2600
2675
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 27. Third Order Output Intercept
Point versus Frequency
Figure 28. Noise Figure versus Frequency
2750
MMG15241HT1
12
RF Device Data
Freescale Semiconductor
1.90
3.00
2X
45°
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 29. PCB Pad Layout for SOT--89A
MG241H
YYWW
Figure 30. Product Marking
MMG15241HT1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
MMG15241HT1
14
RF Device Data
Freescale Semiconductor
MMG15241HT1
RF Device Data
Freescale Semiconductor
15
MMG15241HT1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2010
Description
• Initial Release of Data Sheet
MMG15241HT1
RF Device Data
Freescale Semiconductor
17
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MMG15241HT1
Document Number: MMG15241H
Rev. 0, 12/2010
18
RF Device Data
Freescale Semiconductor
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