SYNSEMI BR1001 Silicon bridge rectifier Datasheet

BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
BR10
PRV : 50 - 1000 Volts
Io : 10 Amperes
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
FEATURES :
*
*
*
*
*
*
0.77 (19.56)
0.73 (18.54)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
* Pb / RoHS Free
0.75 (19.1)
Min.
MECHANICAL DATA :
0.30 (7.62)
0.25 (6.35)
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc=55°C
IF(AV)
10
A
IFSM
300
A
Current Squared Time at t < 8.3 ms.
I 2t
160
A2S
Maximum Forward Voltage per Diode at IF = 5 A
VF
1.0
V
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
RθJC
2.5
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
12
10
8
6
4
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x8.2cm x 0.3cm ) Al.-PLATE
2
250
T J = 50 °C
200
150
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
50
0
0
0
25
50
75
100
125
150
175
1
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
4
6
10
20
40
60 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
FORWARD CURRENT, AMPERES
2
NUMBER OF CYCLES AT 60Hz
Pulse W idth = 300 µs
1 % Duty Cycle
10
1.0
T J = 25 °C
0.1
PER DIODE
10
T J = 100 °C
1.0
T J = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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