BZX85C3V3 - BZX85C 5 6 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix “C” Hermetically sealed by glass sleeve body Mechanical Data Case: Glass sleeve DO-41 Lead: Axial leads, solderable per MIIL-STD-202, Method 2025 Polarity: Color band denotes cathode end Mounting position: Any Weight: 310 mg (approx.) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol Pd RθJA TJ, TSTG Value 1.3 130 -55 to + 175 Notes: 1. Measured with pulses tp=5ms 2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of 10 mm from case.. 3. f = 1KHz. Version: C08 Units W O C /W O C ELECTRICAL CHARACTERISTICS (TA=25OC Device Zener Voltage Range (Note 1) Vz @ Izt Min V Max unless otherwise noted) Dynamic Resistance fZT (Note 3) Ohm IZK mA fZT (Note 3) Ohms Temperature Coefficient of Zener Voltage mA O Min% / CMax IZT VZ @ IZ= IZT Admissible Zener Reverse Leakage Current Current (Note 2) IZ IR VR uA V mA BZX85C3V3 3.1 3.5 <20 80 <400 1 -0.08 -0.05 <40 1.0 300 BZX85C3V6 3.4 3.8 <20 60 <500 1 -0.08 -0.05 <20 1.0 290 BZX85C3V9 3.7 4.1 <15 60 <500 1 -0.07 -0.02 <10 1.0 280 BZX85C4V3 4 4.6 <13 50 <500 1 -0.05 0.01 <3 1.0 250 BZX85C4V7 4.4 5.0 <13 45 <600 1 -0.03 0.04 <3 1.0 215.0 BZX85C5V1 4.8 5.4 <10 45 <500 1 -0.01 0.04 <1 1.5 200.0 BZX85C5V6 5.2 6 <7 45 <400 1 0 0.045 <1 2.0 190.0 BZX85C6V2 5.8 6.6 <4 35 <300 1 0.01 0.055 <1 3.0 170.0 BZX85C6V8 6.4 7.2 <3.5 35 <300 1 0.015 0.06 <1 4.0 155.0 BZX85C7V5 7 7.9 <3 35 <200 0.5 0.02 0.065 <1 4.5 140.0 BZX85C8V2 7.7 8.7 <5 25 <200 0.5 0.03 0.07 <1 6.2 130.0 BZX85C9V1 8.5 9.6 <5 25 <200 0.5 0.035 0.075 <1 6.8 120.0 BZX85C10 9.4 10.6 <7 25 <200 0.5 0.04 0.08 <0.5 7.5 105.0 BZX85C11 10.4 11.6 <8 20 <300 0.5 0.045 0.08 <0.5 8.2 97.0 BZX85C12 11.4 12.7 <9 20 <350 0.5 0.045 0.085 <0.5 9.1 88.0 BZX85C13 12.4 14.1 <10 20 <400 0.5 0.05 0.085 <0.5 10 79.0 BZX85C15 13.8 15.6 <15 15 <500 0.5 0.055 0.09 <0.5 11 71.0 BZX85C16 15.3 17.1 <15 15 <500 0.5 0.055 0.09 <0.5 12 66.0 BZX85C18 16.8 19.1 <20 15 <500 0.5 0.06 0.09 <0.5 13 62.0 BZX85C20 18.8 21.2 <24 10 <600 0.5 0.06 0.09 <0.5 15 56.0 BZX85C22 20.8 23.3 <25 10 <600 0.5 0.06 0.095 <0.5 16 52.0 BZX85C24 22.8 25.6 <25 10 <600 0.5 0.06 0.095 <0.5 18 47.0 BZX85C27 25.1 28.9 <30 8 <750 0.25 0.06 0.095 <0.5 20 41.0 BZX85C30 28 32 <30 8 <1000 0.25 0.06 0.095 <0.5 22 36.0 BZX85C33 31 35 <35 8 <1000 0.25 0.06 0.095 <0.5 24 33.0 BZX85C36 34 38 <40 8 <1000 0.25 0.06 0.095 <0.5 27 30.0 BZX85C39 37 41 <50 6 <1000 0.25 0.06 0.095 <0.5 30 28.0 BZX85C43 40 46 <50 6 <1000 0.25 0.06 0.095 <0.5 33 26.0 BZX85C47 44 50 <90 4 <1500 0.25 0.06 0.095 <0.5 36 23.0 BZX85C51 48 54 <115 4 <1500 0.25 0.06 0.095 <0.5 39 21.0 BZX85C56 52 60 <120 4 <2000 0.25 0.06 0.095 <0.5 43 19.0 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300us pulse width, period = 5ms. 3. f = 1KHz. Version: C08 RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES) FIG.1- PULSE THERMAL RESISTANCE VS PULSE DURATION FIG.3- DYNAMIC RESISTANCE VS ZENER CURRENT FIG.5- ADMISSIBLE POWER DISSIPATION VS FIG.2- DYNAMIC RESISTANCE VS ZENER CURRENT FIG.4- THERMAL RESISTANCE VS LEAD LENGTH FIG.6- DYNAMIC RESISTANCE VS ZENER CURRENT AMBIENT TEMPERATURE Version: B08 RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES) FIG.7- BREAKDOWN CHARACTERISTICS FIG.8- BREAKDOWN CHARACTERISTICS Version: C08