CET CED6336 N-channel enhancement mode field effect transistor Datasheet

CED6336/CEU6336
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 25A , RDS(ON) = 41mΩ @VGS = 10V.
RDS(ON) = 55mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
60
Units
V
VGS
±20
V
ID
25
A
IDM
100
A
40
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
S
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
0.06
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
3.2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Jan
http://www.cetsemi.com
CED6336/CEU6336
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 12.5A
1
33
41
mΩ
VGS = 4.5V, ID = 10A
41
55
mΩ
Dynamic Characteristics c
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, ID = 25A
VDS = 30V, VGS = 0V,
f = 1.0 MHz
10
S
750
pF
110
pF
70
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1Ω
16
32
ns
5
10
ns
38
76
ns
Turn-Off Fall Time
tf
6
12
ns
Total Gate Charge
Qg
22.2
29.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 30V, ID = 5.3A,
VGS = 10V
3.2
nC
4.7
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 12.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
25
A
1.2
V
6
CED6336/CEU6336
25
50
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,5V
VGS=4.0V
15
10
5
40
30
20
25 C
10
TJ=125 C
0
0.0
0.5
1.0
1.5
2.0
0
2.5
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
400
Coss
200
Crss
0
6
12
18
24
30
5.0
2.0
1.7
ID=25A
VGS=10V
1.4
1.1
0.8
0.5
0.2
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
4.0
Figure 2. Transfer Characteristics
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
3.0
Figure 1. Output Characteristics
800
1.2
2.0
VGS, Gate-to-Source Voltage (V)
1000
1.3
1.0
VDS, Drain-to-Source Voltage (V)
1200
0
0.0
-55 C
-25
0
25
50
75
100
125
150
VGS=0V
10
2
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10 V =30V
DS
ID=5.3A
10
8
6
4
2
0
0
2
100us
1ms
10ms
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED6336/CEU6336
4
8
12
16
20
24
10
1
100ms
DC
10
0
10
-1
10
-2
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-2
10
-5
t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
2
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