ON MCH6602-TL-E N-channel power mosfet Datasheet

Ordering number : EN6445D
MCH6602
N-Channel Power MOSFET
http://onsemi.com
30V, 0.35A, 3.7Ω, Dual MCPH6
Features
•
•
•
•
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
30
V
±10
V
0.35
A
PW≤10μs, duty cycle≤1%
1.4
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.8
W
150
°C
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-006
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
4
Marking
0 to 0.02
1
2
TL
3
0.65
0.3
0.85
FB
LOT No.
0.25
Packing Type : TL
LOT No.
0.07
MCH6602-TL-E
0.15
2.1
1.6
0.25
2.0
Electrical Connection
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
6
5
4
1
2
3
82813 TKIM TC-00002986/71112 TKIM/12407 TIIM TC-00000415/70306/ No.6445-1/6
42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509
MCH6602
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
VGS(off)
| yfs |
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
Ratings
min
typ
Unit
max
30
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
VDS=10V, ID=80mA
0.15
V
1
μA
±10
μA
1.3
0.22
V
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Ciss
Ω
7.0
pF
Output Capacitance
Coss
5.9
pF
Reverse Transfer Capacitance
Crss
2.3
pF
Turn-ON Delay Time
td(on)
tr
19
ns
65
ns
155
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
120
ns
1.58
nC
0.26
nC
0.31
IS=150mA, VGS=0V
0.87
nC
1.2
V
Switching Time Test Circuit
4V
0V
VDD=15V
VIN
PW=10μs
D.C.≤1%
ID=80mA
RL=187.5Ω
VIN
VOUT
D
G
P.G
50Ω
MCH6602
S
Ordering Information
Device
MCH6602-TL-E
Package
Shipping
memo
MCPH6
3,000pcs./reel
Pb-Free
No.6445-2/6
MCH6602
ID -- VGS
0.30
0.10
0.08
VGS=1.5V
0.06
0.04
°C
Ta=
--
0.20
75
°C
3.0
0.25
Drain Current, ID -- A
0.12
V
2.0
V
3.5V
4.0V
6.0
V
Drain Current, ID -- A
0.14
25°
C
2.
5V
VDS=10V
25
ID -- VDS
0.16
0.15
0.10
0.05
0.02
0
0
0
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
0
1.0
1.0
1.5
2.0
2.5
Ta=25°C
VGS=4V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
8
7
6
80mA
5
ID=40mA
4
3
2
1
2
3
4
5
7
6
8
9
Gate to Source Voltage, VGS -- V
10
25°C
--25°C
2
2
3
5
7
2
0.1
3
Drain Current, ID -- A
3
2
1
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT00035
7
2
0.1
3
5
IT00032
RDS(on) -- ID
VGS=1.5V
3
2
10
Ta=75°C
7
5
--25°C
3
25°C
2
2
3
5
7
0.01
2
3
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
=2
GS
V
40
=4.0
I D=
, VGS
A
80m
I D=
4
5
5
IT00034
| yfs | -- ID
1.0
.5V
,V
mA
3
IT00033
6
5
2
5
1.0
0.001
5
RDS(on) -- Ta
7
--25°C
2
7
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
1.0
0.01
25°C
3
100
7
3
Ta=75°C
Drain Current, ID -- A
VGS=2.5V
5
5
IT00031
RDS(on) -- ID
10
7
1.0
0.01
0
1
IT00030
RDS(on) -- ID
10
9
0
3.0
Gate to Source Voltage, VGS -- V
RDS(on) -- VGS
10
0.5
IT00029
VDS=10V
7
5
25°C
3
Ta=
2
C
--25°
75°C
0.1
7
5
3
2
0.01
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
5
IT00036
No.6445-3/6
MCH6602
IS -- VSD
1.0
7
Switching Time, SW Time -- ns
25
--2
5°C
°C
75
°C
2
Ta
=
Source Current, IS -- A
3
7
5
3
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
3
td (off)
tf
2
100
7
tr
5
3
td(on)
2
Gate to Source Voltage, VGS -- V
3
2
Ciss
Coss
5
3
Crss
2
5
7
2
0.1
IT00038
VGS -- Qg
VDS=10V
ID=150mA
9
7
3
Drain Current, ID -- A
10
5
10
2
IT00037
f=1MHz
7
Ciss, Coss, Crss -- pF
5
10
0.01
1.2
Ciss, Coss, Crss -- VDS
100
VDD=15V
VGS=4V
7
5
0.1
SW Time -- ID
1000
VGS=0V
8
7
6
5
4
3
2
1
1.0
0
0
2
4
6
8
10
12
14
16
18
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
1m
s
7
10m
ID=0.35A
s
2
0.1
7
5
3
2
0.01
DC
100
ms
ope
rat
Operation in
this area is
limited by RDS(on).
ion
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
1.0
2
3
5
7
0.4
0.6
10
2
Drain to Source Voltage, VDS -- V
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
IDP=1.4A(PW≤10μs)
3
0.2
1.6
IT00040
PD -- Ta
1.0
1.0
5
0
IT00039
ASO
3
2
20
W
0.8
he
nm
ou
nte
do
0.6
nc
era
mi
cs
0.4
ub
str
ate
(90
0m
m2
✕0
.8m
0.2
m)
1u
nit
0
3
5
IT01117
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT01118
No.6445-4/6
MCH6602
Outline Drawing
MCH6602-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.6445-5/6
MCH6602
Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6445-6/6
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