CJ818B SOT-23-6L Plastic-Encapsulate Transistors CJ818B TRANSISTOR (PNP) DESCRIPTIONS The device is manfactured in low voltage PNP Planar T echnology with “Base Island ” layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. SOT-23-6L FEATURE Very low collector to emitter saturation voltage APPLICATIONS z Power management in portable equipments z Switching regulator in battery charge applications MARKING: 6 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Dissipation 0.35 W RθJA Thermal Resistance from Junction to Ambient 357 ℃/W Ptot Total Dissipation at TC = 25℃ 1.2 W RθJC Thermal Resistance from Junction to case (note 1) 104.2 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Note 1：Package mounted on FR4 pcb 25mm x 25mm. [email protected] www.zpsemi.com 1 of 3 CJ818B ELECTRICAL CHARACTERISTICS (Ta =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA ,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE IC=-0.5A,IB=-5mA -0.15 V IC=-1.2A,IB=-12mA -0.45 V IC=-2A,IB=-20mA -0.8 V IC=-0.5A,IB=-5mA -1.1 V IC=-1.2A,IB=-12mA -1.1 V IC=-2A,IB=-20mA -1.2 V IC=-0.5A, VCE=-2V -1.1 V Collector-emitter saturation voltage Bade-emitter saturation voltage Base-emitter on voltage * VCE(sat)* * VBE(sat) VBE(on)* VCE=-1V, IC=-0.5A 100 VCE=-3V, IC=-2.5A 100 *Pulse test: Pulse width≤300us,duty cycle≤2.0%. [email protected] www.zpsemi.com 2 of 3 CJ818B hFE Static Characteristic -900 -1000 COMMON EMITTER Ta=25℃ 3.0mA Ta=100℃ hFE 2.4mA 2.1mA -600 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 2.7mA IC —— 1.8mA 1.5mA 1.2mA -300 0.9mA Ta=25℃ -100 0.6mA COMMON EMITTER VCE=-1V IB=0.3mA -0 -10 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.2 —— VCE -6 -1 (V) -10 -100 COLLECTOR CURRENT IC VCEsat -10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0 -1.0 -0.8 Ta=25℃ -0.6 Ta=100℃ -0.4 -1000 IC -3000 (mA) IC —— -1 Ta=100℃ -0.1 Ta=25℃ β=100 β=100 -0.2 -0.01 -1 -10 -100 COLLECTOR CURRENT IC -3000 -1000 IC -1 -3000 -100 COLLECTOR CURRENT (mA) VBE —— -10 1000 Cob/ Cib —— -1000 IC VCB/ VEB COMMON EMITTER VCE=-2V -1000 -3000 (mA) f=1MHz IE=0/IC=0 (pF) Ta=100℃ Ta=25℃ -10 100 Cob -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 BASE-EMMITER VOLTAGE PC 400 COLLECTOR POWER DISSIPATION PC (mW) Cib C -100 CAPACITANCE COLLCETOR CURRENT IC (mA) Ta=25℃ —— VBE -1.0 -1.2 10 -0.1 -1 REVERSE VOLTAGE (V) -10 V -20 (V) Ta 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE [email protected] 100 Ta 125 150 (℃ ) www.zpsemi.com 3 of 3