NSD350H High Voltage Switching Diode The NSD350H is a high voltage switching diode in a SOD−323 surface mount package. Features www.onsemi.com • Small Footprint Package, SOD−323 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−free Device, Halogen Free/BFR Free and are RoHS Compliant 1 CATHODE 2 ANODE MARKING DIAGRAM Typical Applications • • • • • Flat Panel TVs Power Supply Industrial Wireless Handsets Automotive Modules SOD−323 CASE 477 STYLE 1 AJ = Specific Device Code M = Date Code G = Pb−Free Package MAXIMUM RATINGS Single Diode (TA = 25°C) Symbol Max Unit Reverse Voltage VR 350 V Forward Current (DC) IF 200 mA Rating Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 10 s t = 100 s t = 1 ms t = 10 ms IFSM A 12 5 2 1.5 Symbol (Note: Microdot may be in either location) ORDERING INFORMATION Device NSD350HT1G NSVD350HT1G Package Shipping† SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic AJ MG G Max Unit 250 2 mW mW/°C Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction to Ambient RJA (Note 1) 500 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 100 mm2 2 oz Cu PCB © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 0 1 Publication Order Number: NSD350H/D NSD350H Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Symbol Min V(BR)R 350 Typ Max Unit V Reverse Leakage (VR = 300 V) IR 150 nA Reverse Leakage (VR = 350 V) IR 5 A Forward Voltage (IF = 100 mA) VF 1.1 V Total Capacitance (VR = 0 V, f = 1.0 MHz) CT 5.0 pF Reverse Recovery Time (IF = IR = 10 mA, IR(rec) = 1.0 mA, Figure 1) trr 55 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2k 100 H 0.1 F IF tr 0.1 F tp T IF trr 10% T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 NSD350H TYPICAL CHARACTERISTICS 1E−04 IF, FORWARD CURRENT (mA) 150°C IR, LEAKAGE CURRENT (A) 1E−05 125°C 1E−06 85°C 1E−07 1E−08 25°C 1E−09 −55°C 1E−10 1E−11 150°C 100 125°C 10 85°C 1 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 −55°C 0.8 0.9 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 2. Reverse Leakage Current Figure 3. Forward Voltage 2.0 CT, TOTAL CAPACITANCE (pF) 0 25°C 1.8 TJ = 25°C f = 1 MHz 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance www.onsemi.com 3 25 30 1.0 1.1 NSD350H PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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