JIEJIE MICROELECTRONICS CO. , Ltd JST131 Series 1A TRIACs Rev.3.0 DESCRIPTION: JST131 series triacs with low holding and latching current are especially recommended for use on middle and small resistance type power load. 1 2 1 3 2 3 SOT-223 SOT-89 MAIN FEATURES Symbol Value Unit IT(RMS) 1 A ITSM 16 A VTM 1.7 V 13 2 TO-92 T2(2) T1(1) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40 - 150 ℃ Tj -40 - 125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM + 100 V Non repetitive peak reverse voltage VRSM VRRM + 100 V IT(RMS) 1 A ITSM 16 A I2t 1.28 A2s dI/dt 10 A/μs IGM 2 A PG(AV) 0.5 W Storage junction temperature range Operating junction temperature range TO-92 (TC=51℃) RMS on-state current SOT-89/ SOT-223 (TC=70℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com JST131 Series JieJie Microelectronics CO. , Ltd Peak gate power PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol Test Condition Quadrant Unit Ⅰ-Ⅱ-Ⅲ IGT Ⅳ VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ D 5 5 5 10 MAX mA ALL MAX 1.5 V ALL MIN 0.2 V Ⅰ-Ⅲ 5 5 8 10 MAX 5 7 mA MIN 15 20 V/μs Value(MAX) Unit Tj=25℃ 1.7 V Tj=25℃ 10 μA Tj=125℃ 500 μA Value Unit IL IG=1.2IGT IH IT=200mA VD=2/3VDRM Gate Open Tj=125℃ dV/dt T Ⅱ-Ⅳ MAX mA STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=1.4A tp=380μs VD=VDRM VR=VRRM THERMAL RESISTANCES Symbol Rth(j-c) Parameter TO-92 60 SOT-89/ SOT-223 23 junction to case(AC) TEL：+86-513-83639777 - 2 / 5- ℃/W http://www.jjwdz.com JST131 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J ST 131 U -600 D T:IGT1-4≤5mA D:IGT1-3≤5mA IGT4≤10mA JieJie Microelectronics Co.,Ltd 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V TRIACs IT(RMS):1A U:TO-92 N:SOT-89 V:SOT-223 PACKAGE MECHANICAL DATA N N C Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.45 5.20 0.175 0.205 B 4.32 5.33 0.170 0.210 C 3.18 4.19 0.125 0.165 D 0.407 0.533 0.016 0.021 H F V Inches E 0.60 0.80 0.024 0.031 E F - 1.1 - - 0.043 - G - 1.27 - - 0.050 - H - 2.30 - - 0.091 - J 0.36 0.50 0.014 0.020 K 12.70 15.0 0.500 0.591 N 2.04 2.66 0.080 0.105 P 1.86 2.06 0.073 0.081 V - 4.3 - 0.169 A ax m M K P B Φ 5m 1. D J G TO-92 TEL：+86-513-83639777 - 3 / 5- http://www.jjwdz.com JST131 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions D B E J Ref. F1 B1 Inches Min. Typ. Max. Min. Typ. Max. A 1.5 1.6 1.8 0.059 0.063 0.071 A1 0.01 0.06 0.10 0.001 0.002 0.004 0.122 B 2.9 3.0 3.1 0.114 0.118 B1 0.6 0.7 0.8 0.024 0.028 0.031 C 0.22 0.26 0.32 0.009 0.010 0.013 D 6.3 6.5 6.7 0.248 0.256 0.264 E 3.3 3.5 3.7 0.130 0.138 0.146 F 4.6 0.181 F1 2.3 0.091 K C A A1 F Millimeters G H SOT-223 G 0.7 0.9 1.1 0.028 0.035 0.043 H 1.5 1.75 2 0.059 0.069 0.079 J 6.7 7.0 7.3 0.264 0.276 0.287 K 0.9 0.035 Ref. Millimeters Dimensions Min. E2 D D1 D2 A C H L E E1 B e e1 SOT-89 FIG.1 Maximum power dissipation versus RMS on-state current Inches Max. Min. Typ. A 1.40 1.60 0.055 0.063 0.40 0.52 0.016 0.020 C 0.35 0.41 0.014 0.016 D 4.40 4.60 0.173 0.181 D1 1.50 1.70 0.059 0.067 D2 1.30 1.50 0.051 0.059 E 2.40 2.60 0.094 0.102 0.087 2.20 E2 0.52 0.020 e 1.50 0.059 e1 3.00 0.118 F 5° 0.197° H 4.05 4.25 0.159 0.167 L 0.89 1.20 0.035 0.047 FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 1.2 P(w) 1.6 Max. B E1 F Typ. α=180° TO-92 1.0 1.2 SOT-89/ SOT-223 0.8 0.8 0.6 0.4 0.4 0.2 0 0 0.2 IT(RMS) (A) 0.4 0.6 TEL：+86-513-83639777 0.8 1.0 - 4 / 5- 0 0 TC (℃) 25 50 75 100 125 http://www.jjwdz.com JST131 Series JieJie Microelectronics CO. , Ltd FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 20 17.5 t=20ms One cycle 15 10 Tj=Tjmax 12.5 10 1 7.5 5 Tj=25℃ 2.5 0 1 Number of cycles 100 10 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms and 2 corresponding value of I t (dI/dt < 10A/μs) ITSM (A), I2 t (A2 s) dI/dt 1 VTM (V) 3 2 4 5 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.0 400 100 0.1 0 2.5 ITSM IGT4 2.0 1.5 10 IH&IL 1.0 0.5 1 0.01 2 It tp(ms) 0.1 1 10 20 0.0 -40 IGT1-3 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 20-May-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com