AVAGO ACPM-7833-BLK Dynamic bias control for low midpower idd Datasheet

ACPM-7833
CDMA1900 (PCS) Power Amplifier Module
Data Sheet
Description
Features
The ACPM-7833 is a fully matched CDMA Power
amplifier module. Designed around Avago
Technologies’ new Enhancement Mode pHEMT
process, the ACPM-7833 offers premium performance
in a very small form factor. Fully matched to 50 Ohms
on the input and output.
• Operating frequency: 1850– 1910 MHz
The amplifier has excellent ACPR and efficiency
performance at max Pout and low quiescent current
with a single bias control voltage. For even lower
quiescent current, a dynamic bias control circuit can
be used by varying the voltage on the Vcntl pin
between 1.2V to 2.5V.
Designed in a surface mount RF package, the ACPM7833 is cost and size competitive.
The ACPM-7833 is another key component of the
Avago Technologies CDMAdvantage RF chipset.
• 28.5 dBm linear output power @ 3.4V
• High efficiency: 40% PAE
• Dynamic bias control for low midpower Idd
• Very low quiescent current with single control
voltage
• Internal 50 ohm matching networks for both RF IN/
OUT
• 3.2– 4.2V linear operation
• cdma2000 1xRTT capable
• Only 3 SMT parts needed
• 4.0 x 4.0 x 1.1 mm SMT package
Applications
• CDMA handsets
• Datacards
• PDAs
Vdd1
Vbias
Vdd2
Bias Circuit
Input
Power
Input
Match
On Chip
Inter-stage
Match
Passive
Output
Match
Output
Vcntl
Single control bias setting for low Idq
and 40% PAE at Pout = 28.5 dBm
Maximum Ratings[1]
Parameter
Min.
Max.
Vdd Supply Voltage
6.0 V
Power Dissipation [2]
2.5 W
Bias Current
1.5 A
Control Voltage (Vcntl)
3.0 V
Amplifier Input RF Power
10 dBm
Junction Temperature
+150°C
Storage Temperature (case temperature)
-40°C
Thermal Resistance[2] θjc = 22.3°C/W
Recommended operating range of
Vdd = 3.2 to 4.2 V, Ta = -30 to +85°C
+100°C
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Tcase = 25°C
Package Marking and Dimensions
Vdd2
(Pin 10)
Agilent
ACPM-7833
YYWWDD
XXXX
Vdd1 (Pin 1)
Gnd
RFin
RFout
Gnd
Gnd
Gnd
4.0 mm (sq)
Vcntl
Gnd
Vbias
1.1 mm
Top View
Side View
Bottom View
Note:
YYWWDD: year – work week – day
XXXX: lot code
0.400±0.076
0.850±0.076
2.000±0.076
0.850±0.076
0.850±0.076
4.000±0.076
0.850±0.076
3.80±0.076
2.000±0.076
3.400±0.076
4.000±0.076
1.100±0.076
All units are in mm
2
Electrical Characterization Information
All tests are done in 50Ω system at Vdd1=Vdd2=Vbias = 3.4V, 25°C, unless noted otherwise.
Parameter
Units
Min
Typ
Max
Comments
MHz
1850
dB
25.5
27.5
29.5
Vcntl= 2.5V
24
26
28
Vcntl= 1.8V
PCS CDMA
Frequency Range
1910
Gain (Fixed Cntl Voltage)
Pout = 28.5 dBm
Pout = 16 dBm
Power Added Efficiency
Pout = 28.5 dBm
%
38
40
Vcntl= 2.5V
Pout = 16 dBm
%
7.5
8.5
Vcntl= 1.8V
Total Supply Current
mA
mA
mA
520
135
31
ACPR @ ± 1.25 MHz offset
dBc/30 kHz
-45
-48
Pout - 28.5 dBm
ACPR @ ± 1.98 MHz offset
dBc/30 kHz
-53
-55
Pout - 28.5 dBm
Quiescent Current
mA
mA
mA
Vcntl Current
mA
Input VSWR (Pout = 28.5 dBm)
3
550
156
Pout = 28.5 dBm, Vcntl= 2.5V
Pout =16 dBm, Vcntl= 1.8V
Pout = -5 dBm, Vcntl = 1.2V
62
47
25
80
60
Pout - 28.5 dBm, Vcntl= 2.5V
Vcntl = 1.8V
Vcntl = 1.2V
2.0
2.7
Vcntl = 2.5V
2.0:1
Noise Figure
dB
4.5
Noise Power @ 80 MHz offset in 1930– 1990 MHz
dBm/Hz
-141
Stability (Spurious): Load VSWR 5:1
dBc
-50
Harmonic Suppression: 2Fo
dBc
-30
-138
All phases
-38
Ω system,
Typical Performance, data measured in 50Ω
Vdd1=Vdd2=Vbias = 3.4V, Vcntl = 2.5V, T = 25°C and Freq = 1880 MHz unless noted otherwise.
50
40
30
29
28
26
25
24
23
21
0
20
10
-40
20
0
5
10
15
20
25
30
-20
Vcntl=2.5V
Vcntl=1.6V
Vcntl=1.2V
22
PAE (%)
GAIN (dB)
GAIN (dB)
40
20
27
0
30
0.4
0.8
1.2
1.6
2.0
2.4
0
2.8
0
5
10
Vcntl (V)
Pout (dBm)
Figure 1. Gain vs. Pout.
Figure 2. Gain vs. Vcntl.
20
25
30
Figure 3. PAE vs. Pout.
-40
160
500
15
Pout (dBm)
140
-45
300
200
ACPR1 (dBc)
120
Idd (mA)
Idd (mA)
400
100
80
60
Vcntl=2.5V
Vcntl=1.6V
Vcntl=1.2V
40
100
20
0
5
10
15
20
25
30
0
5
Pout (dBm)
15
20
-30
HARMONIC SUPPRESSION (dBc)
-55
-60
-65
-70
-75
-80
2nd
3rd
-35
-40
-45
-85
-90
0
5
10
15
20
25
30
Pout (dBm)
Figure 7. ACPR (1.98 MHz offset) vs. Pout.
4
-50
10
15
20
0
5
10
15
20
25
30
Figure 6. ACPR (1.25 MHz offset) vs. Pout.
Figure 5. Idd vs. Output Power.
-50
-65
Vcntl=1.2V
Vcntl=1.6V
Vcntl=2.5V
Pout (dBm)
Pout (dBm)
Figure 4. Idd vs. Output Power.
ACPR2 (dBc)
10
-55
-60
0
0
-50
25
Pout (dBm)
Figure 8. 2nd/3rd Harmonics vs. Pout.
30
Ordering Information
Part Number
No. of Devices
Container
ACPM-7833-BLK
10
Bulk
ACPM-7833-TR1
1000
7” Tape and Reel
Tape Dimensions and Orientation
0.30 ± 0.05
4.00 ± 0.10[2]
2.00 ± 0.05[1]
1.75 ± 0.10
φ1.55 ± 0.05
5.50 ± 0.05[3]
CL
12.00 ± 0.30
4.38 ± 0.10
4.38 ± 0.10
φ1.50 (MIN)
1.80 ± 0.10
8.00 ± 0.10
4.38 ± 0.10
Notes:
1. Measured from centerline of sprocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ±0.2 mm
3. All dimensions in millimeters unless otherwise stated.
Agilent
ACPM-7833
YYWWDD
XXXX
5
Reel Drawing
BACK VIEW
Shading indicates
thru slots
18.4 max.
178 +0.4
–0.2
50 min.
25
min wide (ref)
Slot for carrier tape
insertion for attachment
to reel hub (2 places 180 apart)
12.4 +2.0
–0.0
FRONT VIEW
1.5 min.
13.0±0.2
21.0±0.8
6
NOTES:
1. Reel shall be labeled with the following
information (as a minimum).
a. manufacturers name or symbol
b. Avago Technologies part number
c. purchase order number
d. date code
e. quantity of units
2. A certificate of compliance (c of c) shall
be issued and accompany each shipment
of product.
3. Reel must not be made with or contain
ozone depleting materials.
4. All dimensions in millimeters (mm)
Application Information
The following material is presented to assist in general design and use of the APCM-7833.
• 3.0V Characterization, for use in Data Card Applications
• cdma2000 1XRTT Description and Characterization data
• Design tips on various methods to control the bias on Vcntl pin
• Description of ACPR measurement methods
• Description of Avago Technologies evaluation demoboard for ACPM-7833
• IR Reflow Profile (applicable for all Avago Technologies E-pHEMT PAs)
3.0V Characterization, Data Card Applications
Electrical Data
All tests are done in 50Ω system at Vdd1=Vdd2=Vbias = 3.0V, 25°C, unless noted otherwise.
Parameter
Units
Min
MHz
1850
Typ
Max
Comments
1900 MHz CDMA
Frequency Range
1910
Gain (Fixed Cntl Voltage)
(Pout = 28.5 dBm)
dB
26
Vcntl = 2.5V
(Pout = 13 dBm)
dB
28
Vcntl = 2.5V
(Pout = -5 dBm)
dB
28
Vcntl = 2.5V
Pout = 28.0 dBm
%
42
Vcntl = 2.5V
Pout = 16 dBm
%
8.5
Vcntl = 2.5V
mA
500
Pout = 28.0 dBm, Vcntl= 2.5V
100
Pout = 13 dBm, Vcntl= 1.6V
30
Pout = -5 dBm, Vcntl= 1.2V
Power Added Efficiency
Total Supply Current
ACPR @ ± 1.25 MHz offset
dBc/30 kHz
-43
Pout - 28.5 dBm
ACPR @ ± 1.98 MHz offset
dBc/30 kHz
-56
Pout - 28.5 dBm
Quiescent Current
mA
60
Pout - 28.5 dBm, Vcntl = 2.5V
Input VSWR
(Pout = 28.5 dBm)
2.0:1
(Pout = 16 dBm)
2.5:1
Noise Figure
dB
4.5
Noise Power @ 80 MHz offset in 1930 - 1990 MHz
dBm/Hz
-141
Stability (Spurious): Load VSWR 5:1
dBc
-50
2Fo
dBc
-40
3Fo
dBc
-40
Harmonic Suppression
7
All phases
50
500
29
40
400
28
30
300
27
20
26
10
Idd (mA)
30
PAE (%)
GAIN (dB)
Ω system,
Typical Performance, data measured in 50Ω
Vdd1=Vdd2=Vbias = 3.0V, Vcntl = 2.5V, T = 25°C and Freq =1880 MHz.
100
0
25
0
5
10
15
20
25
0
30
5
10
15
20
25
0
30
0
5
10
Pout (dBm)
Pout (dBm)
Figure 9. Gain vs. Pout.
HARMONIC SUPPRESSION (dBc)
ACPR2 (dBc)
-60
-55
-65
-70
-75
-80
-60
-90
0
5
10
15
20
25
30
Pout (dBm)
40
GAIN (dB)
20
0
-20
-40
0
0.4
0.8
1.2
1.6
Vcntl (V)
Figure 15. Gain vs. Vcntl.
8
0
5
10
15
20
25
30
Pout (dBm)
Figure 12. ACPR (1.25 MHz offset) vs. Pout.
2.0
2.4
2.8
30
-35
-40
-45
2nd
3rd
-85
-65
25
-30
-55
-50
20
Figure 11. Idd vs. Pout.
-50
-45
15
Pout (dBm)
Figure 10. PAE vs. Pout.
-40
ACPR1 (dBc)
200
Figure 13. ACPR (1.98 MHz offset) vs. Pout.
-50
10
15
20
25
30
Pout (dBm)
Figure 14. Harmonic Suppression vs. Pout.
cdma 2000 1xRTT Characterization
System Description
CDMA2000 is the TIA’s standard for third generation
(3G) technology and is an evolution of the IS-95 CDMA
format. CDMA2000 includes 1X RTT in the single-carrier
mode and 3X RTT in the multi-carrier mode. This paper
describes the CDMA2000 1X RTT approach and its
performance with Avago Technologies 4x4 CDMA PAs,
ACPM-7833. CDMA2000 1X RTT, being an extension of
the IS-95 standard, has a chip rate of 1.2288Mchip/s.
However, in 1xRTT, the reverse link transmits more than
one code channel to accommodate the high data rates.
The minimum configuration consists of a reverse pilot
(R-Pilot) channel for synchronous detection by the Base
Transceiver System (BTS) and a reverse fundamental
channel (R-FCH) for voice. Additional channels such as
the reverse supplemental channels (R-SCHs) and the
reverse dedicated channel (R-DCCH) are used to send
data or signaling information. Channels can exist at
different rates and power levels.
Table 1 shows the transmitter specification in
CDMA2000 reverse link.
Table 1. Transmitter Specification in Reverse Link.
Specification
Spread Rate1
ERP at Maximum Output Power
Lower limit +23 dBm
Upper limit +30 dBm
Minimum Controlled Output Power
-50 dBm/1.23 MHz
Waveform Quality Factor and Frequency Accuracy
>0.944
Spurious Emission at
Maximum RF output
power offset frequency
within the range
SR1, Band Class 0(Cellular band)
SR1, Band Class1(PCS band)
885 kHz to 1.98 MHz
Less stringent of -42 dBc/30 kHz
or -54 dBm/1.23 MHz
1.25 MHz to 1.98 MHz
Less stringent of -42 dBc/30 kHz
or -54 dBm/1.23 MHz
1.98 MHz to 3.125 MHz
Less stringent of -54 dBc/30 kHz
or -54 dBm/1.23 MHz
1.98 MHz to 2.25 MHz
Less stringent of -50 dBc/30 kHz
or -54 dBm/1.23 MHz
3.125 MHz to 5.625 MHz
-13 dBm/100 kHz
2.25 MHz to 6.25 MHz
-13 dBm/1 MHz
Typical channel configurations below are based on the transmitter test
condition in the reverse link.
1) “Basic” Voice only configuration
– R-PICH @ -5.3 dB
– R-FCH @ -1.5 dB 9.6 kbps
2) Voice and Data configuration
– R-PICH @ -5.3 dB
– R-FCH @ -4.54 dB 9.6 kbps
– R-SCH1 @ -4.54 dB 9.6 kbps
3) Voice and Control configuration
– R-PICH @ -5.3 dB
– R-FCH @ -3.85 dB 9.6 kbps
– R-DCCH @ -3.85 dB 9.6 kbps
4) Control channel only configuration
– R-PICH @ -5.3 dB
– R-DCCH @ -1.5 dB 9.6 kbps
9
Combinations of these channels will increase the peak
to average power ratio for higher data rates. The
complementary cumulative distribution function
(CCDF) measurement characterizes the peak to average
power statistics of CDMA2000 reverse link. For
reference, the system specifications of peak to average
power ratio of IS-95 and CDMA2000 IX RTT are 3.9 dB
and 5.4 dB at 1% CCDF respectively.
Higher peak to average power ratio requires a higher
margin, both in higher power gain and in improved
thermal stability for PA linearity to meet the minimum
system specifications.
The test results below for the ACPM-7833 show the
compliance to the system linearity specifications with
4 channel configurations, representing a broad crosssection of CDMA2000 1X RTT environments.
Test result of ACPM-7833 using CDMA2000 1X RTT signal
Test condition - PA Evaluation board with Vdd1=Vdd2=Vbias = 3.4V, Vcntl = 2.5V, Frequency = 1880 MHz.
Test result with each channel configuration.
Channel
IVdd(mA)
Pin(dBm)
1.25 MHz
ACPR(dBc)
1.25 MHz
ACPR(dBc)
-1.98 MHz
ACPR(dBc)
+1.98 MHz
ACPR(dBc)
Pout(dBm)
Basic
451.0
-0.14
-52.6
-51.5
-60.2
-60
28
Voice+Data
435.0
0.52
-46.2
-45.7
-58.0
-58.3
28
Voice+Cntl
439.0
0.50
-45.5
-44.9
-60.1
-60
28
Cntl only
299.0
-2.56
-49.1
-48.8
-57.7
-57.5
25.5
EIA/TIA-98-D indicates a 2.5 dB allowed back off in power for control channel only configuration.
Peak to average power ration (Pout = 16 dBm)
CCDF(%)
Basic
Voice + Data
Voice + CNTL
CNTL only
10
2.11
3.37
3.44
4.00
1
3.74
4.83
5.21
5.75
0.1
4.68
5.68
6.24
6.73
0.01
5.15
6.20
6.76
7.18
0.001
5.36
6.53
7.11
7.39
0.0001
5.48
6.63
7.17
7.45
10
1. Fixed Bias Control
Design Tips to use Vcntl pin
Power Amplifier Control Using Vcntl Pin on ACPM-7833
Power amplifier control scheme in CDMA systems is
one of the important and challenging aspects of CDMAbased handset design. Handset designers must balance
maintaining adequate linearity while optimizing
efficiency at high, medium and low output power
levels. The primary method to achieve these goals is
to adjust the bias of the PA as a function of output
power. Theoretically, the best efficiency would be
achieved when the bias of the PA is continually
adjusted based on the output power requirement of
the PA. However, implementing this type of circuit can
be complex and costly. Therefore several different
approaches have been developed to provide an
acceptable trade-off between optimum efficiency and
optimum manufacturability. This application section
reviews four methods of controlling the bias of a CDMA
power amplifier: fixed, step, logical and dynamic.
Using a fixed bias point on the PA is the traditional
method, and it is the simplest. For example, the
recommended value of the fixed control voltage on
the Vcntl pin for the ACPM-7833 is 2.5V. The Vcntl pin
on the PA is controlled by PA_ON pin of the baseband
IC. When PA_ON is HIGH, the output RF signal of the
PA is enabled, enabling the subscriber unit to transmit
the required data. The switch circuit also controls the
on/off state of the PA.
Below is an example of how to control the the output
of the PA using PA_ON and Vcntl pins.
Power Mode
PA_ON
Vcntl
Power Range
Shut Down
LOW
0V
—
High Power
HIGH
2.5V
- 28.5 dBm
Battery
To Duplexer
Vbias
Vdd2
Vdd1 PA
Vcntl
TxIC
Enable
Baseband
IC
PA_ON
Switch Circuit for PA
Vcntl
PMIC or LDO
11
Note: PMIC: Power Management IC
LDO: Low Drop Output (Regulator)
2. Step Bias Control and Dynamic Bias Control (if controled
PDM1)
The PDM1 output from the baseband IC can be used
to create a software-programmable voltage, to be used
at the phone designer’s discretion. To get high
efficiency and better ACPR, the phone designers can
change control voltage of the PA by adjusting PDM1
voltage according to output power of PA. A caution
when using this approach—careful consideration must
be made to to avoid an abrupt discontinuity in the
output signal when the step bias control voltage is
applied.
The figure below is an example of how to control the
PA for multiple bias points using the PA_ON and Vcntl
pins.
Power Mode
PA_ON
Vcntl
Power Range
Shut Down
LOW
0V
—
Low Power
HIGH
1.2V
~ -5 dBm
Mid Power
HIGH
1.6V
-5 dBm ~ 13 dBm
High Power
HIGH
2.5V
13 dBm ~ 28.5 dBm
Battery
To Duplexer
Vbias
Vdd2
Vdd1
PA
Baseband
IC
TxIC
Vcntl
PA_ON
Enable
R1
Switch Circuit for PA
C1
PDM1
If PDM1 can be controlled then same circuit can be used for Dynamic bias control
12
3. Dynamic Bias Control Alternate Implementation
Phone designers can use TX_ADC_ADJ pin of the
baseband IC to get dynamic bias control with Vcntl
pin of PA. TX_ADC_ADJ is a PDM output pin produced
by the TX AGC subsystem and used to control the gain
of the Tx signal prior to the PA. The variable output
levels from two inverting operational amplifiers,
generated and compared by TX_ADC_ADJ, provide
dynamic control voltages for the Vcntl of 1.0V ~ 2.7V
with a 0.1V step.
Battery
To Duplexer
Vbias
Vdd2
Vdd1 PA
Vcntl
TxIC
Baseband IC
Vcontrol
Enable
Switch Circuit
PA_ON
R5
R3
R4
V1
R1
_
_
+
R2 Vin
C1
TX_ADC_ADJ
Av = -(V1/Vin) = -R3/R2,
V1 = -(R3/R2)Vin,
Vo = -(R5/R4)V1= [(R5*R3)/(R4*R2)]*Vin
The using of combination of two pins, PDM1 and
TX_ADC_ADJ, is another method of realizing a dynamic
bias control scheme. The two OP Amps control the
Vcntl voltage levels with compared and integrated
circuits.
Battery
To Duplexer
Vbias
Vdd2
Vdd1 PA
Vcntl
TxIC
Baseband IC
Vcontrol
PA_ON
Enable
Switch Circuit
_
_
TX_ADC_ADJ
+
+
PDM1
13
ACPR Measurement Method
Adjacent-channel power ratio (ACPR) is used to
characterize the distortion of power amplifiers and
other subsystems for their tendency to cause
interference with neighboring radio channels or
systems. The ACPR measurement often is specified as
the ratio of the power spectral density (PSD) of the
CDMA main channel to the PSD measured at several
offset frequencies. For the Cellular band (824 ~
849 MHz transmitter channel), the two offsets are at
±885 kHz and ±1.98 MHz and the measurement
resolution bandwidth specified is 30 kHz. These offsets
are at ±1.25 MHz and ±1.98 MHz for the PCS band
(1850 ~ 1910 MHz transmitter channel).
1.23 MHz
0
-10
1st ACPR (dBc)
-20
30 kHz
-40
-50
2nd ACPR (dBc)
30 kHz
-30
30 kHz
1st ACPR-L
Offset frequency
-60
-70
-80
1st ACPR-U
2nd ACPR-L
= 1.98 MHz
2nd ACPR-U
= 1.98 MHz
FREQUENCY (MHz)
Figure 16. CDMA Adjacent-Channel Power Ratio Measurement.
14
30 kHz
ACPR Testing Diagram Test
PA Test Setup
DC Power Supply
CH1 CH2 CH3 CH4
8593E
Spectrum
Analyzer
Vbias
Vcntl
Power
Divider
20 dB
Attenuator
E4406A
VSA Transmitter
Tester
CDMA PA
ACPM-7833
Figure 17. ACPR test equipment setup.
ACPM-7833 Test Result using VSA Transmitter Tester
Figure 18. ACPR measurement using VSA Transmitter tester.
15
Vdd2
Vdd1
3 dB
Attenuator
E4437B
CDMA Signal
Generator
ACPR Test Results using Spectrum Analyzer
REF 42.8 dBm
Mkr 836 MHz
35.42 dBm
AT 30 dB
RBW = 1.0 MHz
RBW = 300 kHz
RBW = 30 kHz
Center 836 MHz
VBW 100 kHz
Span 5.000 MHz
SWP 2.00 sec
Figure 19. Example ACPR measurement using Spectrum Analyzer.
The meaning of 16 dB
The accurate ACPR measurement using Spectrum
Analyzer needs to consider the normalization factor
that is dependent on the Resolution Bandwidth, RBW,
settings. The above figure (measurement shown at
836 MHz for general example) shows a comparison of
the different ACPR measurement results as a function
of various RBW values. As the RBW is reduced, less
power is captured during the measurement and
consequently the channel power is recorded as a
smaller value. For example, if the main channel power
is measured as 28 dBm in a 1.23 MHz bandwidth, its
power spectral density is 28 dBm/1.23 MHz, which can
be normalized to 11.87 dBm/30 kHz. The equation used
to calculate the normalization factor of power spectral
density is:
Normalization Factor =
10log[Normalization BW/Current BW
(Spectrum Analyzer RBW)]
= 10log[1.23X106/30X103]
ACPM-7833 Demoboard Operation Instructions
1) Module Description
The ACPM-7833 is a fully matched Power Amplifier.
The sample devices are provided on a demonstration
PC Board with SMA connectors for RF inputs and
outputs, and a DC connector for all bias and control
I/O’s. Please refer to Figures 20 through 23 and the Pin
configuration table for I/O descriptions and
connections.
2.2 µF
Vdd2
RF Out
Vdd2
Vdd1
GND
RFin
RFout
GND
GND
Vcntl
4700 pF
4700 pF
Vdd1
RFin
4700 pF
GND
GND
Vbias
Vcntl
4700 pF
= 16.13 dB
Vbias
Since the ACPR in an IS95 system is specified in a
1.23 MHz bandwidth, a channel power that is measured
using a different RBW, can be normalized to reflect the
channel power as if it was measured in a 1.23 MHz
bandwidth. The difference in channel power measured
in 30 kHz bandwidth and the channel power measured
in a 1.23 MHz bandwidth is 16 dB.
16
Figure 20. ACPM-7833 Evaluation Board Schematic and Layout.
Vdd2 (f)
GND
Vdd1 (f)
Vbias (f)
GND
PIN Configuration Table
C3
C2
C1
RF in
C4
RF out
Back side
1
GND
1b Vdd2 (s)
2
Vbias
2b GND
3
Vdd1
3b Vdd1 (s)
4
GND
4b Vcntl
5
Vdd2
5b Vbias (s)
C5
PCS
4x4 v2
Figure 21. Layer 1 – Top Metal & Solder Mask.
Figure 22. Layer 2 – Ground.
Figure 23. Layer 3 – Bottom Metal & Solder Mask.
17
Top side
C1 = 4700 pF
C2 = 4700 pF
C3 = 2.2 µF
C4 = 4700 pF
C5 = 4700 pF
2) Circuit Operation
The design of the power module (PAM) provide bias
control via Vcntl to achieve optimal RF performance
and power control. The control pin is labeled Vcntl.
Please refer to for the block diagram of this PAM.
Typical Operation Conditions
(Vdd1=Vdd2=Vbias = 3.4V)
Parameter
ACPM-7833
Frequency Range
1850 – 1910 MHz
Output Power
28.5 dBm
Vcntl
2.5 V
High Crest: On
Filter: Std
Phase Polarity: Invert
- ACPR Measurement
The ACPR (and channel power) is measured using
an Avago Technologies 4406 VSA with
corresponding ACPR offsets for IS-98c and JSTD-8.
Averaging of 10 is used for ACPR measurements.
- DC Connection
3) Maximum Ratings
Vdd 5.0V
Drain Current 1.5A
Vcntl 3V
RF input
10 dBm
Temperature -30 to 85°C
Please Note: Avoid Electrostatic Discharge on all I/
O’s.
A DC connector is provided to allow ease of
connection to the I/Os. Wires can be soldered to
the connector pins, or the connector can be
removed and I/Os contacted via clip leads or direct
soldered connections. The wiring of I/Os are listed
in Figures 20 through 23 and the Pin configuration
table. The Vdd sense connections are provided to
allow the use of remote-sensing power supplies of
compensation for PCB traces and cable resistance.
- Device Operation
1) Connect RF Input and Output for the band under
test.
2) Terminate all unused RF ports into 50 Ohms.
3)
4) Heat Sinking
The demonstration PC Board provides an adequate
heat sink. Maximum device dissipation should be
kept below 2.5 Watts.
5) Testing
- Signal Source
The CDMA modulated signal for the test is generated
using an Agilent ESG-D4000A (or ESG-D3000A)
Digital Signal Generator with the following settings:
CDMA Setup : Reverse
Spreading: On
Bits/Symbol: 1
Data: PN15
Modulation: OQPSK
Chip Rate: 1.2288 Mcps
Connect Vdd1, Vdd2 and Vdd3 supplies
(including remote sensing labeled Vdd1 S, Vdd2
S and Vbias S on the board). Nominal voltage is
3.4V.
4) Connect Vcntl supply and set reference voltage
to the voltage shown in the data packet. Note
that the Vcntl pin is on the back side of the
demonstration board. Please limit Vcntl to not
exceed the corresponding listed “DC Biasing
Condition” in the Data Packet. Note that
increasing Vcntl over the corresponding listed
“DC Biasing Condition” can result in power
decrease and current can exceed the rated limit.
5) Apply RF input power according to the values
listed in “Operation Data” in Data Packet.
6) Power down in opposite sequence.
Vbias
Vdd1
Vdd2
Bias Circuit
Input
Passive
Input
Match
On Chip
Inter-stage
Match
Passive
Output
Match
Output
Vcntl
Single control bias setting for low Idq
and 40% PAE at Pout = 28.5 dBm
Figure 24. Power Module Block Diagram.
18
IR Reflow Soldering
Figure 25 is a straight-line representation of the
recommended nominal time-temperature profile from
JESD22-A113-B IR reflow.
TEMPERATURE ( C)
235
200
183
150
60 to 150s
above 183 C
100
50
0
30
60
Preheat
Zone
90
120
150
180
TIME (seconds)
Soak
Zone
210
Reflow
Zone
Figure 25. Time-temperature Profile for IR Reflow Soldering Process.
Table 2. IR Reflow Process Zone.
Process Zone
∆Temperature
∆Temperature/∆
∆Time
Preheat Zone
25°C to 100°C
3°C/s MAX
Soak Zone
100°C to 150°C
0.5°C/s MAX (120s MAX)
Reflow Zone
150°C to 235°C (240°C MAX)
235°C to 150°C
4.5°C/s TYP
-4.5°C/s TYP
Cooling Zone
150°C to 25°C
-6°C/s MAX
Table 3. Classification Reflow Profiles.
Convection or IR/Convection
Average ramp-up rate (183°C to peak)
3°C/second max.
Preheat temperature 125 (± 25)°C
120 seconds max.
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature
10 – 20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6°C/second max.
Time 25°C to peak temperature
6 minutes max.
Note:
All temperatures measured refer to the package body surface.
19
240
270
Cooling
Zone
300
Zone 1 – Preheat Zone
Zone 4 – Cooling Zone
The average heat up rate for surface-mount component
on PCB shall be less than 3°C/second to allow even
heating for both the component and PCB. This ramp is
maintained until it reaches 100°C where flux activation
starts.
The temperature ramp down rate is 6°C/second
maximum. It is important to control the cooling rate as
fast as possible in order to achieve the smaller grain
size for solder and increase fatigue resistance of solder
joint.
Zone 2 – Soak Zone
Solder Paste
The flux is being activated here to prepare for even
and smooth solder joint in subsequent zone. The
temperature ramp is kept gradual to minimize thermal
mismatch between solder, PC Board and components.
Over-ramp rate here can cause solder splatter due to
excessive oxidation of paste.
The recommended solder paste is type Sn6337A or
Sn60Pb40A of J-STD-006.
Zone 3 – Reflow Zone
The solder paste may be deposited onto PCB by either
screen printing, using a stencil or syringe dispensing.
The recommended stencil thickness is in accordance
to JESD22-B102-C.
The third process zone is the solder reflow zone. The
temperature in this zone rises rapidly from 183°C to
peak temperature of 235°C for the solder to transform
its phase from solid to liquids. The dwell time at
melting point 183°C shall maintain at between 60 to
150 seconds. Upon the duration of 10-20 seconds at
peak temperature, it is then cooled down rapidly to
allow the solder to freeze and form solid.
Note: Solder paste storage and shelf life shall be in
accordance with manufacturer’s specifications.
Stencil or Screen
Extended duration above the solder melting point can
potentially damage temperature sensitive components
and result in excessive inter-metallic growth that causes
brittle solder joint, weak and unreliable connections.
It can lead to unnecessary damage to the PC Board
and discoloration to component’s leads.
Nominal stencil thickness
Component lead pitch
0.102 mm (0.004 in)
Lead pitch less than 0.508 mm (0.020 in)
0.152 mm (0.006 in)
0.508 mm to 0.635 mm (0.02 in to 0.025 in)
0.203 mm (0.008 in)
Lead pitch greater than 0.635 mm (0.025 in)
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www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-1899EN
AV01-0038EN - February 22, 2006