DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 17 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Switching and amplification. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. 2 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter − − 32 V − − 45 V BCY58 − − 32 V BCY59 − − 45 V − − 100 mA Tamb ≤ 45 °C − − 340 mW Tcase ≤ 45 °C − − 1 W 120 170 220 BCY58 BCY59 VCEO MIN. collector-emitter voltage IC collector current (DC) Ptot total power dissipation hFE DC current gain open base IC = 2 mA; VCE = 5 V BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII 180 250 310 BCY58/IX; BCY59/IX 250 350 460 BCY58/X; BCY59/X 380 500 630 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 150 − − MHz toff turn-off time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − 480 800 ns ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA − 450 800 ns 1997 Jun 17 2 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER CONDITIONS collector-base voltage MIN. MAX. UNIT open emitter BCY58 − 32 V BCY59 − 45 V BCY58 − 32 V BCY59 − 45 V − 7 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1 W °C open collector Tstg storage temperature −65 +150 Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 450 K/W Rth j-c thermal resistance from junction to case 150 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER TYP. MAX. UNIT IE = 0; VCB = 32 V − − 10 nA IE = 0; VCB = 32 V; Tj = 150 °C − − 10 µA IE = 0; VCB = 45 V − − 10 nA IE = 0; VCB = 45 V; Tj = 150 °C − − 10 µA − − 10 nA BCY58/VII; BCY59/VII − 20 − BCY58/VIII; BCY59/VIII 20 95 − BCY58/IX; BCY59/IX 40 190 − BCY58/X; BCY59/X 100 300 − collector cut-off current BCY59 IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 10 µA; VCE = 5 V 1997 Jun 17 MIN. collector cut-off current BCY58 ICBO CONDITIONS 3 Philips Semiconductors Product specification NPN switching transistors SYMBOL hFE BCY58; BCY59 PARAMETER DC current gain CONDITIONS hFE VBEsat MAX. BCY58/VII; BCY59/VII 120 170 220 BCY58/VIII; BCY59/VIII 180 250 310 BCY58/IX; BCY59/IX 250 350 460 380 500 630 BCY58/VII; BCY59/VII 80 250 − BCY58/VIII; BCY59/VIII 120 300 400 BCY58/IX; BCY59/IX 160 390 630 BCY58/X; BCY59/X 240 550 1000 BCY58/VII; BCY59/VII 40 − − BCY58/VIII; BCY59/VIII 45 − − BCY58/IX; BCY59/IX 60 − − DC current gain DC current gain IC = 100 mA; VCE = 1 V 60 − − 50 100 350 mV IC = 100 mA; IB = 2.5 mA 150 250 700 mV collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA base-emitter saturation voltage UNIT IC = 10 mA; VCE = 1 V BCY58/X; BCY59/X VCEsat TYP. IC = 2 mA; VCE = 5 V BCY58/X; BCY59/X hFE MIN. IC = 10 mA; IB = 0.25 mA 600 700 850 mV IC = 100 mA; IB = 2.5 mA 750 875 1200 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 5 pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − − 15 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 150 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB − 85 150 ns − 35 − ns − ns Switching times (between 10% and 90% levels) ton turn-on time td delay time tr rise time − 50 ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA toff turn-off time − 480 800 ns ts storage time − 400 − ns tf fall time − 80 − ns ton turn-on time td delay time tr − 55 150 ns − 5 − ns rise time − 50 − ns ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA toff turn-off time − 450 800 ns ts storage time − 250 − ns tf fall time − 200 − ns 1997 Jun 17 4 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Jun 17 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 5 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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