Panasonic MA786WK Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X786E
Silicon epitaxial planar type
Unit : mm
2.8
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Average forward
current
Single
VR
30
V
VRRM
30
V
IFM
300
mA
Double*2
1.45
0.95
+ 0.1
+ 0.1
0.16 − 0.06
1 : Anode 1
2 : Anode 2
JEDEC : TO-236
3 : Cathode 1, 2
EIAJ : SC-59A
Mini Type Package(3-pin)
200
100
IF(AV)
Double*2
Non-repetitive peak forward
surge current*1
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Unit
3
0.8
+0.2
1.1 −0.1
Rating
1
2
■ Absolute Maximum Ratings Ta = 25°C
Symbol
0.65 ± 0.15
1.5 − 0.05
0.95
+ 0.2
2.9 − 0.05
1.9 ± 0.2
• Two MA3X786s are contained in one package (cathode common)
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
Parameter
+ 0.25
0.65 ± 0.15
■ Features
+ 0.2
− 0.3
0.4 − 0.05
For super-high speed switching circuit
For small current rectification
Marking Symbol: M3Z
mA
70
Internal Connection
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
3
2
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
15
µA
0.55
V
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IF = 100 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
20
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
2
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X786E
Schottky Barrier Diodes (SBD)
IF  V F
VF  Ta
Forward current IF (mA)
− 20°C
Ta = 125°C
10
Forward voltage VF (V)
75°C 25°C
102
1
10−1
10−2
IR  VR
1.0
104
0.8
103
0.6
0.4
IF = 100 mA
0.2
0
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
Forward voltage VF (V)
40
80
120
160
200
IR  T a
103
Reverse current IR (µA)
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
12
8
0
0
5
10
15
20
25
Reverse voltage VR (V)
2
VR = 30 V
3V
1V
102
10
1
4
30
10−1
−40
75°C
10
25°C
0
40
80
120
160
Ambient temperature Ta (°C)
0
5
10
15
20
25
Reverse voltage VR (V)
104
16
102
10−1
0
Ct  VR
20
Ta = 125°C
1
10 mA
3 mA
Ambient temperature Ta (°C)
24
Reverse current IR (µA)
103
200
30
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