PROFET® BTS 432 I2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1) VLoad dump Clamp of negative voltage at output Vbb-VOUT Avalanche Short-circuit protection Vbb (operation) Current limitation Vbb (reverse) Thermal shutdown RON Diagnostic feedback Open load detection in OFF-state IL(SCp) CMOS compatible input IL(SCr) Electrostatic discharge (ESD) protection IL(ISO) Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Application Clamp 80 58 4.5 ... 42 -32 38 42 33 11 V V V V mΩ A A A 5 5 • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits 1 Standard SMD General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. R bb + Vbb Voltage Overvoltage Current Gate source protection limit protection 3 V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG Page 1 of 15 1999-02-19 BTS 432 I2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at T j = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb Vs 3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 125 A °C 1.7 2.0 J kV -0.5 ... +6 ±5.0 ±5.0 V mA ≤1 ≤ 75 ≤ tbd K/W EAS VESD VIN IIN IST 63 66.5 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) 4) chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on pcb4): VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 2 1999-02-19 BTS 432 I2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON -- 30 38 mΩ IL(ISO) 9 55 11 70 -- A IL(GNDhigh) -- -- 1 mA ton toff 50 10 160 -- 300 80 µs dV /dton 0.4 -- 2.5 V/µs -dV/dtoff 1 -- 5 V/µs 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V ∆Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) 42 42 -60 63 --0.2 -67 52 ---- V V V V Tj=150 °C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, V IN = 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) VIN =0, IST=0, Tj=-40...+25°C : Tj=150°C: Operating current (Pin 1)7), VIN =5 V 5) 6) 7) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) µA Ibb(off) IGND --- 40 50 70 110 -- 1.1 -- mA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST , if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG Page 3 1999-02-19 BTS 432 I2 Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 µs if V ON > V ON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) --22 -42 -- 72 --- A 20 33 -- A 80 -- 400 µs VON(CL) -- 58 -- V VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---1.7 1.3 1.0 V °C K J Integrated resistor in V bb line -Vbb Rbb --- -120 32 -- V Ω Diagnostic Characteristics Open load detection current IL(off) 10 30 60 µA 2 3 4 V min value valid only, if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at V OUT = V bb - V ON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Open load detection voltage Tj=-40..150°C: VOUT(OL) ) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL (t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Infineon Technologies AG Page 4 1999-02-19 BTS 432 I2 Input and Status Feedback11) Input turn-on threshold voltage VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V µA 10 25 50 µA td(ST OL3) 40 -- 300 µs td(ST SC) 80 200 400 µs VST(high)12) VST(low) -IST +IST13) 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 2) ∆ VIN(T) VIN = 0.4 V: IIN(off) On state input current (pin 2) VIN = 3.5 V: IIN(on) Delay time for status with open load after Input neg. slope (see diagram page 12) Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C mA 11) If a ground resistor R GND is used, add the voltage drop across this resistor. 12) V ≈ V during undervoltage shutdown St high bb 13) No current sink capability during undervoltage shutdown Infineon Technologies AG Page 5 1999-02-19 BTS 432 I2 Truth Table Input- Output level level 432 D2 432 E2/F2 432 I2 Normal operation Open load L H L H L H H H H L H H H L H H L H Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage L H L H L H L H L H H L H H (L15)) L L H L H H (L15)) L L H H H H H L L H L L Overvoltage Status 14) H L L H H L L L L L L L16) L16) L L L16) L16) L L L = "Low" Level H = "High" Level Terms Status output Ibb VLogic 3 I IN Vbb IN ST 2 IL V VST IN OUT PROFET I ST 4 VON 5 ST GND GND V bb 1 R IGND VOUT GND ESDZD Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not designed for continuous current Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high Input circuit (ESD protection) R IN + V bb I ESDZDI1 ZDI2 V ON I I OUT GND ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current Logic unit Short circuit detection 14) Power Transistor off, high impedance 15) Low resistance short V to output may be detected by no-load-detection bb 16) No current sink capability during undervoltage shutdown Infineon Technologies AG Page 6 1999-02-19 BTS 432 I2 Inductive and overvoltage output clamp GND disconnect + V bb V Z 3 V ON Vbb IN 2 PROFET OUT OUT 4 GND V VON clamped to 58 V typ. Overvolt. and reverse batt. protection GND 1 IN V ST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. + V bb R IN bb V 5 ST GND disconnect with GND pull up R bb VZ 3 IN Logic V R ST ST 2 IN Vbb OUT PROFET GND PROFET 4 OUT 5 ST GND RGND 1 Signal GND Rbb = 120 Ω typ., VZ +Rbb *40 mA = 67 V typ., add RGND, RIN , RST for extended protection V V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with charged inductive load 3 high 2 OFF I Vbb PROFET L(OL) 4 Logic unit IN Open load detection V OUT 5 ST GND 1 OUT V bb Signal GND Infineon Technologies AG Page 7 1999-02-19 BTS 432 I2 Inductive Load switch-off energy dissipation 3 high 2 IN E AS PROFET 4 E bb Vbb OUT 5 E ST IN GND 1 PROFET = V V bb bb ST GND Load OUT EL ER Energy dissipated in PROFET EAS = Ebb + EL - ER. 2 ELoad < EL, EL = 1/2 * L * I L Infineon Technologies AG Page 8 1999-02-19 BTS 432 I2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432D2 432E2 432F2 432I2 Overtemperature protection Tj >150 °C, latch function17)18) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ. 17) (when first turned on after approx. 200 µs) D E X F I X X X X X X X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X Undervoltage shutdown with auto restart X X X X Overvoltage shutdown with auto restart X X X X X X X X Status feedback for overtemperature short circuit to GND X X X X -19) -19) -19) X open load X X X X undervoltage X - - X overvoltage X - - X short to Vbb Status output type CMOS X X X X X X X X X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X Load current limit high level (can handle loads with high inrush currents) X medium level X low level (better protection of application) 17) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb Infineon Technologies AG Page 9 1999-02-19 BTS 432 I2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb ST V OUT V OUT A ST CMOS I L t A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs Figure 3a: Turn on into short circuit, Figure 2a: Switching a lamp, IN IN ST ST V OUT VOUT td(SC) I I L L t t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. Infineon Technologies AG Page 10 1999-02-19 BTS 432 I2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (Tj<Tjt) IN IN IL ST I L(SCp) I L(SCr) V ST OUT T J t t Heating up may require several milliseconds , Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and Tj<T jt Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN IN ST t d(ST OL1) t d(OL ST2) ST V OUT V OUT IL **) normal I open normal L t **) current peak approx. 20 µs t td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ Infineon Technologies AG Page 11 1999-02-19 BTS 432 I2 Figure 5b: Open load: detection in OFF-state, turn on/off to open load Figure 6a: Undervoltage: IN IN Vbb td(ST OL3) ST Vbb(u cp) Vbb(u rst) V bb(under) VOUT V OUT I L ST CMOS normal open t *) in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = 30 µA typ t Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) V on Figure 5c: Open load: detection in OFF-state, open load occurs in off-state off IN ST V off V V V bb(u rst) OUT V V I L normal load open load bb(under) bb(over) bb(o rst) bb(u cp) on normal load V bb Vbb [V] *) *) t charge pump starts at Vbb(ucp) =6.5 V typ. *) IL = 30 µA typ Infineon Technologies AG Page 12 1999-02-19 BTS 432 I2 Figure 7a: Overvoltage: IN Vbb V V ON(CL) Vbb(over) V bb(o rst) OUT ST t Infineon Technologies AG Page 13 1999-02-19 BTS 432 I2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 432 I2 Infineon Technologies AG SMD TO-220AB/5, Opt. E3122 Ordering code Ordering code Q67060-S6204-A2 BTS 432 I2 E3122A T&R: Page 14 Q67060-S6204-A3 1999-02-19 BTS 432 I2 Published by Infineon Technologies AG Balanstraße 73, D-81541 München Infineon Technologies AG 2002. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact Infineon Offices in Germany or the Infineon Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Office. 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Critical components 20) of Infineon Technologies AG, may only be used in life supporting devices or systems 21) with the express written approval of Infineon Technologies AG. 20) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 21) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 15 1999-02-19