AO3415 20V P-Channel MOSFET General Description Product Summary The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-4.5V) -4A RDS(ON) (at VGS= -4.5V) < 41mΩ RDS(ON) (at VGS= -2.5V) < 53mΩ RDS(ON) (at VGS= -1.8V) < 65mΩ ESD protected SOT23 Top View D Bottom View D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Sep 2011 Steady-State Steady-State A 1.5 W 1 -55 to 150 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -3.5 IDM TA=25°C Units V -4 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com Typ 65 85 43 °C Max 80 100 52 Units °C/W °C/W °C/W Page 1 of 5 AO3415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 Typ Max V VDS=-20V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 Units TJ=55°C -5 µA ±10 µA -0.57 -0.9 V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 VGS=-1.8V, ID=-2A 52 65 VGS=-1.5V, ID=-1A 61 mΩ Forward Transconductance VDS=-5V, ID=-4A 20 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current VGS=-4.5V, ID=-4A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-4.5V, VDS=-10V, ID=-4A A -0.64 mΩ -1 V -2 A 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20 Ω 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC 13 ns 9 ns 19 ns 29 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/µs mΩ 600 VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω IF=-4A, dI/dt=500A/µs mΩ ns 20 26 32 40 51 62 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: Sep 2011 www.aosmd.com Page 2 of 5 AO3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 -8V -4.5V VDS=-5V 35 -3.0V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 3 5 125°C 25°C VGS=-1.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 100 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 1.60 VGS=-1.5V 80 RDS(ON) (mΩ Ω) 6 60 VGS=-1.8V 40 VGS=-2.5V VGS=-4.5V ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-2A, VGS=-1.8V 1.00 0.80 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 ID=-4A 1.0E+00 100 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 80 60 125°C 125°C 25°C 1.0E-02 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 7: Sep 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 200 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs Power (W) 10.0 -ID (Amps) 20 1ms 1.0 10ms DC 100 10 100ms 0.1 10s TJ(Max)=150°C TA=25°C 1 0.0 0.00001 0.01 0.1 1 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 7: Sep 2011 www.aosmd.com Page 4 of 5 AO3415 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev 7: Sep 2011 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5