roducts., Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ16110* MJW16110* Designer's™ Data Sheet NPN Silicon Power Transistors SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector-Emitter Sustaining Voltage — VCEO(SUS) — 400 V Collector-Emitter Breakdown — V(BR)CES — 650 v State-of-Art Bipolar Power Transistor Design Fast Inductive Switching: tfj = 25 ns (Typ) @ 100°C tc = 50 ns (Typ) @ 100°C tsv = 1 us(Typ)@100°C • Ultrafast FBSOA Specified • 100°C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Symbol MJ16110 MJW16110 Unit vCEO(sus) 400 Vdc Collector-Emitter Breakdown Voltage VCES 650 Vdc Emitter-Base Voltage VEBO 6 Vdc Collector Current — Continuous — Pulsed (1) "c 'CM 15 20 Adc Base Current — Continuous — Pulsed (1) IB 10 15 Adc !BM PD Total Power Dissipation @ TC = 25°C @Tc = 100°C Derated above 25°C Operating and Storage Temperature 175 100 1 135 54 1.09 Watts TJ> Tstg -65(0200 -55to150 °C R0JC 1 0.92 °C/W (FORMERLY TO-3) MJ16110 W/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 5 Seconds TL 275 °C TO-247AE MJW16110 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MJ16110MJW16110 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit vCEO(sus) 400 — — Vdc — — 100 1000 — — — — 1000 jiAdc 10 I^Adc — ~~ — 0.3 0.7 0.3 0.4 0.9 2.0 1.0 1.5 — — 1.2 1.2 1.5 1.5 6 12 20 — See Figures 11, 12, and 13 V OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Table 1) (Ic = 20 mAdc, IB = 0) Collector Cutoff Current (VCE = 650 Vdc, VBE(off) = 1 5 v) (VCE = 650 Vdc, VBE(off) = 1-5 V, TC = 100°C) !CEV Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 iJ, TC = 100°C) !CER IEBO Emitter-Base Leakage (VEB = 6 Vdc, Ic = 0) nAdc ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 5Adc, le = 0.5Adc) (IC = 10 Ado, |B = 1.2Adc) (IC = 10Adc, !B = 2Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100°C) VcE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100°C) vBE(sat) DC Current Gain (Ic = 15 Adc, VCE= 5 vdc) hFE Vdc Vdc DYNAMIC CHARACTERISTICS Dynamic Saturation VcE(dsat) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1 kHz) Cob — — 400 PF — — — — — — 700 1500 ns 45 150 20 75 1000 2000 50 200 25 125 SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage tsv Crossover Fall Time Storage Tj = 25°C IC = 10A, I B 1=1 A, \/f*t-/ a\ ^ \ vBE(off) °v' VcE(pk) = 250 V Crossover tc tfi tsv Tj = 100°C tc tfi Fall Time Resistive Load (Table 2) td Delay Time Rise Time Storage Time Fall Time VCC = 250 V, PW = 30 us, IB2 = 2A, R B 2 = 4U tf Storage Time Fall Time (1) Pulse Test: Pulse Width = 300 [is, Duty Cycle < 2%. tr ts Vnc/«m - J <5 vV v BE(Off) ts tf — — — — — — 15 — 330 — 800 — 110 — 500 — 250 — ns