Vishay DG308BDJ Improved quad cmos analog switch Datasheet

DG308B, DG309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
DESCRIPTION
FEATURES
The DG308B, DG309B analog switches are highly improved
versions of the industry-standard DG308A, DG309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
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These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG308B and DG309B
can handle up to ± 22 V input signals. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is
a normally closed switch. (see Truth Table.)
± 22 V supply voltage rating
CMOS compatible logic
Low on-resistance - RDS(on): 45 
Low leakage - ID(on): 20 pA
Single supply operation possible
Extended temperature range
Fast switching - tON: < 200 ns
Low glitching - Q: 1 pC
BENEFITS
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Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG308A, DG309
Space savings (TSSOP)
APPLICATIONS
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Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
VGND
S4
D4
IN4
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
IN2
D2
TRUTH TABLE
Logic
0
1
S2
V+
NC
DG308B
OFF
ON
DG309B
ON
OFF
Logic “0” 3.5 V
Logic “1” 11 V
S3
D3
IN3
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
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1
DG308B, DG309B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG308BDJ
DG308BDJ-E3
16-Pin PlasticDIP
DG309BDJ
DG309BDJ-E3
DG308BDY
DG308BDY-E3
DG308BDY-T1
DG308BDY-T1-E3
16-Pin Narrow SOIC
DG309BDY
DG309BDY-E3
DG309BDY-T1
DG309BDY-T1-E3
- 40 °C to 85 °C
DG308BDQ
DG308BDQ-E3
DG308BDQ-T1
DG308BDQ-T1-E3
16-Pin TSSOP
DG309BDQ
DG309BDQ-E3
DG309BDQ-T1
DG309BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Voltages Referenced, V+ to VGND
25
(V-) - 2 to (V+) + 2
or
30 mA, whichever occurs first
Digital Inputsa, VS, VD
Current, Any Terminal
30
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
100
Storage Temperature
Power Dissipation (Package)b
Unit
44
(AK Suffix)
- 65 to 150
(DJ, DY and DQ Suffix)
- 65 to 125
16-Pin Plastic DIPc
470
16-Pin Narrow SOIC and TSSOPd
640
16-Pin CerDIPe
900
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
DG308B, DG309B
Vishay Siliconix
SPECIFICATIONSa
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
RDS(on) Match
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 11 V, 3.5 Vf
VANALOG
RDS(on)
RDS(on)
VD = ± 10 V, IS = 1 mA
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Source Off Leakage Current
IS(off)
VS = ± 14 V, VD = ± 14 V
Drain Off Leakage Current
ID(off)
VD = ± 14 V, VS = ± 14 V
Drain On Leakage Current
ID(on)
VS = VD = ± 14 V
Digital Control
Input, Voltage High
VINH
Full
Input, Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
VINH or VINL
Q
VS = 3 V, see figure 2
CL = 1000 pF, Vg = 0 V, Rg = 0 
± 0.01
± 0.02
0.5
20
0.5
20
0.5
40
- 0.5
-5
- 0.5
-5
- 0.5
- 10
0.5
5
0.5
5
0.5
10
11
1
3.5
-1
1
Room
1
5
5
Off-Isolation
Channel-to-Channel
Crosstalk
Power Supply
OIRR
CL = 15 pF, RL = 50 
VS = 1 VRMS, f = 100 kHz
Room
90
Room
95
nA
V
µA
pF
200
Room

%
- 0.5
- 20
- 0.5
- 20
- 0.5
- 40
150
16
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
V
200
Room
VOP
15
85
100
150
Room
Power Supply Range for
Continuous Operation
- 15
Room
VD = VS = 0 V, f = 1 MHz
VIN = 0 V or 15 V
15
85
100
Room
CD(on)
I-
- 15
-1
Channel-On Capacitance
Negative Supply Current
Unit
5
CD(off)
I+
Max.d
3.5
Drain-Off Capacitance
Positive Supply Current
Min.d
11
CS(off)
XTALK
Max.d
2
± 0.01
Source-Off Capacitance
VS = 0 V, f = 1 MHz,
Min.d
45
Full
Room
CIN
Typ.c
ns
pC
pF
dB
Room
Full
Room
Full
1
5
-1
-5
Full
±4
1
5
-1
-5
± 22
±4
± 22
µA
V
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DG308B, DG309B
Vishay Siliconix
SPECIFICATIONSa (for Single Supply)
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 11 V, 3.5 Vf
Temp.b
Typ.c
VD = 3 V, 8 V, IS = 1 mA
Full
Room
Full
90
VANALOG
RDS(on)
tON
tOFF
Q
VS = 8 V, see figure 2
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.d
Max.d
Min.d
Max.d
Unit
0
12
160
200
0
12
160
200
V
Room
300
300
Room
200
200
CL = 1 nF, Vgen = 6 V, Rgen = 0 
Room
VIN = 0 V or 12 V
Room
Full
Room
Full
-1
-5
Full
4
4

ns
pC
Power Supply
Positive Supply Current
I+
Negative Supply Current
I-
Power Supply Range for
Continuous Operation
VOP
1
5
1
5
-1
-5
44
4
44
µA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
DG308B, DG309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
R DS(on) - Drain-Source On-Resistance ()
R DS(on) - Drain-Source On-Resistance ()
110
100
90
±5V
80
70
± 10 V
60
50
± 15 V
40
± 20 V
30
20
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
10
- 20 - 16 - 12
-8
-4
0
4
8
12
16
20
- 15
- 10
-5
5
10
VD - Drain Voltage (V)
RDS(on) vs. VD and Power Supply Voltages
RDS(on) vs. VD and Temperature
15
40
225
V+ = 5 V
V+ = 22 V
V- = - 22 V
TA = 25 °C
30
200
20
150
I S, I D - Current (pA)
175
7V
125
10 V
100
12 V
15 V
75
ID(on)
10
IS(off), ID(off)
0
- 10
- 20
50
- 30
25
0
0
2
4
6
8
10
12
14
- 40
- 20
16
- 15
- 10
-5
VD - Drain Voltage (V)
0
5
10
15
20
Analog Voltage
Leakage Currents vs. Analog Voltage
RDS(on) vs. VD and Single Power Supply Voltages
30
1 nA
V+ = 15 V
V- = - 15 V
VS, V D = ± 14 V
20
Q - Charge (pC)
I S, I D - Current
0
VD - Drain Voltage (V)
250
RDS(on) - Drain-Source On-Resistance ()
V+ = 15 V
V- = - 15 V
90
100 pA
IS(off), ID(off)
10 pA
10
V+ = 15 V
V- = - 15 V
0
V+ = 12 V
V- = 0 V
- 10
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Leakage Currents vs. Temperature
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
- 30
- 15
- 10
-5
0
5
10
15
Analog Voltage (V)
QS, QD - Charge Injection vs. Analog Voltage
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DG308B, DG309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
V+ = 15 V
V- = - 15 V
110
OIRR (dB)
100
90
RL = 50 
80
70
60
50
40
10 k
100 k
1M
10 M
f - Frequency (Hz)
Off Isolation vs. Frequency
SCHEMATIC DIAGRAM (Typical Channel)
V+
SX
V-
Level
Shift/
Drive
V+
INX
DX
GND
V–
Figure 1.
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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
DG308B, DG309B
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
D
S
VS = + 3 V
VO
Logic
Input
tr < 20 ns
tf < 20 ns
12 V
50 %
0V
tOFF
IN
V-
GND
CL
35 pF
RL
1 k
12 V
90 %
Switch
Output
VO
tON
- 15 V
RL
VO = V S
RL + R DS(on)
Figure 2. Switching Time
C
+ 15 V
+ 15 V
C
V+
S1
VS
V+
S
VS
Rg= 50 
VO
D
D1
50 
IN1
Rg = 50 
0 V, 15 V
50 
IN
S2
NC
0 V, 15 V
GND
V-
C
50 
IN2
0 V, 15 V
GND
- 15 V
Off Isolation = 20 log
C = RF bypass
XTA LK Isolation = 20 log
VS
VO
Figure 3. Off Isolation
- 15 V
VO
VO
V+
S
D
VO
CL
1000 pF
12 V
GND
C
Figure 4. Channel-to-Channel Crosstalk
IN
Vg
V-
VS
VO
+ 15 V
Rg
VO
D2
INX
ON
OFF
ON
VV O = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x VO
- 15 V
Figure 5. Charge Injection
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
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7
DG308B, DG309B
Vishay Siliconix
APPLICATIONS
30 pF
+5V
VIN1
+ 15 V
+ 15 V
V+
VL
+
LM101A
VIN2
+ 15 V
-
DG419
- 15 V
RF1
18 k
RF1
9.9 k
RF1
100 k
Rg1
2 k
Rg2
100 
Rg3
100 
DG308B
CH
V-
GND
- 15 V
Gain =
Gain 1 (x 1)
RF + Rg
Gain 2 (x 10)
Rg
Gain 3 (x 100)
Gain 4 (x 1000)
V-
GND
Logic High = Switch On
- 15 V
Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains
15 V
V+
Logic Input
Low = Sample
High = Hold
1 k
+ 15 V
+ 15 V
- 15 V
-
J202
LM101A
VIN
+
5 M
50 pF
200 
2N4400
5.1 M
DG309B
V30 pF
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
- 15 V
VOUT
1000 pF
J500
J507
- 15 V
= 25 µs
= 1 µs
= 5 mV
= 5 mV/s
Figure 7. Sample-and-Hold
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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
DG308B, DG309B
Vishay Siliconix
APPLICATIONS
+ 15 V
160
V1
C4
fC3
Select
TTL
Control
150 pF
120
C3
1500 pF
Voltage Gain dB
fC4
Select
C2
fC2
Select
0.015 μF
fC1
Select
0.15 µF
C1
80
fC2
fC1
fC3
fL1
0
V-
DG309B
fC4
40
fL2
fL3
fL4
GND
- 40
1
- 15 V
10
100
1k
R3 = 1 M
+ 15 V
- 15 V
R1 = 10 k
LM101A
+
R2 = 10 k
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2R3CX
100 k
1M
Max Attenuation =
R DS(on)
10 k
R3
R1
= 100 (40 dB)
1
2R1CX
fL (Unity Gain Frequency) =
30 pF
10 k
Frequency – Hz

- 40 dB
Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70047.
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
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9
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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1
Package Information
Vishay Siliconix
CERDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E1 E
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L1
L
e1
C
B
B1
MILLIMETERS
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
∝
eA
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
19.05
19.56
0.750
0.770
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
∝
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.81
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.38
1.14
0.015
0.045
0°
15°
0°
15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
Document Number: 71282
03-Jul-01
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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