DinTek DTE2312 N-channel 20-v (d-s) mosfet Datasheet

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N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)a
0.0236 at VGS = 10 V
4.5
0.0263 at VGS = 4.5 V
4.5
0.0361 at VGS = 2.5 V
4.5
7.9 nC
TO-226AA
(TO-92)
S
1
G
2
D
Qg (Typ.)
D
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
G
3
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150
°C)a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Limit
20
± 12
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
25
mV/°C
- 3.7
0.6
1.5
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
20
VGS = 10 V, ID = 9.9 A
0.0196
0.0236
RDS(on)
VGS = 4.5 V, ID = 9.4 A
0.0219
0.0263
VGS = 2.5 V, ID = 8 A
0.0301
0.0361
gfs
VDS = 10 V, ID = 9.9 A
20
µA
A
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1020
VDS = 10 V, VGS = 0 V, f = 1 MHz
70
VDS = 10 V, VGS = 10 V, ID = 9.9 A
VDS = 10 V, VGS = 4.5 V, ID = 9.9 A
td(off)
17.5
27
7.9
16
2.1
VDD = 10 V, RL = 1.3 Ω
ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω
0.6
3
6
12
18
11
17
27
41
tf
11
17
td(on)
7
14
tr
td(off)
nC
1.1
f = 1 MHz
td(on)
tr
pF
160
VDD = 10 V, RL = 1.3 Ω
ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω
tf
10
15
20
30
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
4.5c
TC = 25 °C
20
IS = 7.9 A, VGS = 0 V
IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
16
24
ns
6
12
nC
7
8
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package Limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
4
VGS = 10 thru 3 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
VGS = 2 V
8
3
2
TC = 125 °C
1
4
TC = 25 °C
0
0
1
2
3
4
TC = - 55 °C
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
2.0
2.5
Transfer Characteristics
1500
0.04
C - Capacitance (pF)
1200
VGS = 2.5 V
0.03
VGS = 4.5 V
0.02
VGS = 10 V
Ciss
900
600
300
Coss
Crss
0
0.01
0
4
8
12
16
0
20
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
VDS = 10 V
ID = 9.9 A
VGS = 4.5 V, ID = 9.4 A
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
R DS(on) - On-Resistance (Ω)
1.0
VDS = 16 V
6
4
1.5
1.2
VGS = 10 V, ID = 9.9 A
0.9
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 9.9 A
10
TJ = 150 °C
TJ = 25 °C
1
0.034
0.028
TJ = 125 °C
0.022
0.016
TJ = 25 °C
0.010
0.1
0.0
0.2
0.4
0.6
0.8
1.0
5
0
1.2
VSD - Source-to-Drain Voltage (V)
10
15
20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Soure-Drain Diode Forward Voltage
1.4
30
25
1.2
20
Power (W)
V GS(th) (V)
ID = 250 µA
1.0
15
10
0.8
5
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
1
10
100
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.1
TJ - Temperature (°C)
100
1000
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
I D - Drain Current (A)
28
21
14
Package Limited
7
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
25
2.0
20
Power (W)
Power (W)
1.5
15
10
1.0
0.5
5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
10-1
Package Information
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
www.GD\VHPLMS
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