D5& www.daysemi.jp N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 7.9 nC TO-226AA (TO-92) S 1 G 2 D Qg (Typ.) D • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Load Switch G 3 S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Limit 20 ± 12 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. 1 D5& www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 25 mV/°C - 3.7 0.6 1.5 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 20 VGS = 10 V, ID = 9.9 A 0.0196 0.0236 RDS(on) VGS = 4.5 V, ID = 9.4 A 0.0219 0.0263 VGS = 2.5 V, ID = 8 A 0.0301 0.0361 gfs VDS = 10 V, ID = 9.9 A 20 µA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1020 VDS = 10 V, VGS = 0 V, f = 1 MHz 70 VDS = 10 V, VGS = 10 V, ID = 9.9 A VDS = 10 V, VGS = 4.5 V, ID = 9.9 A td(off) 17.5 27 7.9 16 2.1 VDD = 10 V, RL = 1.3 Ω ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω 0.6 3 6 12 18 11 17 27 41 tf 11 17 td(on) 7 14 tr td(off) nC 1.1 f = 1 MHz td(on) tr pF 160 VDD = 10 V, RL = 1.3 Ω ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω tf 10 15 20 30 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4.5c TC = 25 °C 20 IS = 7.9 A, VGS = 0 V IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 16 24 ns 6 12 nC 7 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package Limited Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 4 VGS = 10 thru 3 V I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 2 V 8 3 2 TC = 125 °C 1 4 TC = 25 °C 0 0 1 2 3 4 TC = - 55 °C 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 2.0 2.5 Transfer Characteristics 1500 0.04 C - Capacitance (pF) 1200 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 VGS = 10 V Ciss 900 600 300 Coss Crss 0 0.01 0 4 8 12 16 0 20 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 VDS = 10 V ID = 9.9 A VGS = 4.5 V, ID = 9.4 A 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 1.0 VDS = 16 V 6 4 1.5 1.2 VGS = 10 V, ID = 9.9 A 0.9 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.040 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 9.9 A 10 TJ = 150 °C TJ = 25 °C 1 0.034 0.028 TJ = 125 °C 0.022 0.016 TJ = 25 °C 0.010 0.1 0.0 0.2 0.4 0.6 0.8 1.0 5 0 1.2 VSD - Source-to-Drain Voltage (V) 10 15 20 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage 1.4 30 25 1.2 20 Power (W) V GS(th) (V) ID = 250 µA 1.0 15 10 0.8 5 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 TJ - Temperature (°C) 100 1000 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 28 21 14 Package Limited 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 25 2.0 20 Power (W) Power (W) 1.5 15 10 1.0 0.5 5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 10-1 Package Information TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters www.GD\VHPLMS 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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