MMBD6100LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current ANODE 1 3 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−5 Board (Note 1) TA = 25°C Derate above 25°C 3 1 PD 2 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 − Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) (For each individual diode while the second diode is unbiased) IR − 0.1 mAdc Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr Capacitance (VR = 0 V) C OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mAdc) © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 Vdc 0.55 0.8 0.7 1.1 − 4.0 ns SOT−23 CASE 318 STYLE 9 DEVICE MARKING 5B M G G 1 5B = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBD6100LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G − 2.5 pF 1 SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBD6100LT1/D MMBD6100LT1 820 W +10 V 2.0 k IF 100 mH tp tr 0.1 mF IF t trr 10% t 0.1 mF 90% DUT 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE TA = 85°C I R , REVERSE CURRENT (m A) 10 TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 40 50 MMBD6100LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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