MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS30VSJ-2 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .................................................................. 84Ω ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 80ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 30 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 120 30 A A IS ISM Source current Source current (Pulsed) 30 120 A A PD Tch Maximum power dissipation Channel temperature 45 –55 ~ +150 W °C –55 ~ +150 °C g Tstg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 65 84 mΩ — — 70 0.98 91 1.26 mΩ V — — 23 1800 — — S pF — — 230 120 — — pF pF — — 17 46 — — ns ns — 135 — ns — — 95 1.0 — 1.5 ns V — — — 80 2.77 — °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, I D = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 200 7 5 3 2 100 7 5 3 100ms 1ms TC = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 10V 6V 5V 40 4V 30 TC = 25°C Pulse Test 20 3V 10 PD = 45W 0 10ms DC DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) tw = 10ms 101 CASE TEMPERATURE TC (°C) 50 0 102 7 5 3 2 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 16 VGS = 10V 5V 4V 3V 12 8 2.5V 4 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 100 TC = 25°C Pulse Test 4.0 3.0 30A 2.0 1.0 0 10A 0 2 4 6 TC = 25°C VDS = 10V Pulse Test 10 7 5 3 2 102 7 5 3 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 7 5 4 3 VDS = 10V Pulse Test TC = 25°C 2 75°C 125°C 101 7 5 4 3 2 0 2 4 6 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C f = 1MHZ VGS = 0V Ciss 103 7 5 3 2 20 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 104 40 TRANSFER CHARACTERISTICS (TYPICAL) 30 2 10V 60 DRAIN CURRENT ID (A) 40 0 VGS = 4V 80 0 10 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 8 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 CAPACITANCE Ciss, Coss, Crss (pF) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) ID = 50A Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 102 7 5 4 3 td(off) tf tr 2 101 0 10 td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 VDS = 20V 50V 4 80V 2 0 10 20 30 40 30 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C 10 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 Tch = 25°C ID = 30A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999