UMA1N / FMA1A Transistors −100mA / −50V Complex digital transistors (with built-in resistors) UMA1N / FMA1A zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) 2.0 UMA1N zFeatures 1) Two DTA124E chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. 3) Emitter-common type. 1.3 0.9 0.65 0.65 0.7 2.1 1.25 (5) (4) 0.15 0.2 ROHM : UMT5 EIAJ : SC-88A Each lead has same dimensions Abbreviated symbol : A1 2.9 FMA1A 1.1 1.9 SMT5 Taping Taping TR T148 3000 3000 Code Part No. Basic ordering unit (pieces) (5) ROHM : SMT5 EIAJ : SC-74A − UMA1N − FMA1A zAbsolute maximum ratings (Ta=25°C) <For Tr1 and Tr2 in common> Parameter Supply voltage Input voltage Output current Collector current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) UMA1N FMA1A Pd Tj Tstg ∗ 1 120mW per element must not be exceeded. ∗ 2 200mW per element must not be exceeded. (1) (2) (4) (3) 0.8 0.15 0.3 Each lead has same dimensions Abbreviated symbol : A1 zEquivalent circuits UMA1N Limits −50 −40 to +10 −30 −100 150(TOTAL) ∗1 300(TOTAL) ∗2 Unit V V mA mA 150 °C °C −55 to +150 0.95 0.3Min. UMT5 Packaging type 0.95 1.6 2.8 zPackaging specifications Package 0.1Min. (1) (2) (3) zStructure PNP epitaxial planar silicon transistor (dual chips ; each with two built-in resistors) (5) (4) DTr1 DTr2 R1 R2 R2 R1 (3) (2) (1) (1) IN (2) GND (3) IN (4) OUT (5) OUT mW FMA1A (2) (1) DTr2 DTr1 R1 (5) R2 R2 (4) R1 (3) (1) OUT (2) OUT (3) IN (4) GND (5) IN R1=22kΩ R2=22kΩ Rev.B 1/2 UMA1N / FMA1A Transistors zElectrical characteristics (Ta=25°C) <For Tr1 and Tr2 in common> Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI fT ∗ Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio R1 R2/R1 Min. − −3 − − − 56 Typ. − − −0.1 − − − Max. −0.5 − −0.3 −0.36 −0.5 − Unit − 15.4 0.8 250 22 1 − 28.6 1.2 MHz kΩ − Conditions VCC = −5V , IO = −100µA VO = −0.2V , IO = −5mA IO = −10mA , II = −0.5mA V V mA µA − VI = −5V VCC = −50V , VI = 0V VO = −5V , IO = −5mA VCE = −10V , IE = 5mA , f = 100MHz − − ∗ Characteristics of built-in transistor. zElectrical characteristics curves −10m VO=−0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −20 −10 −5 Ta=−40˚C 25˚C 100˚C −2 −1 −500m −200m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) −2m −1m −500µ Ta=100˚C 25˚C −40˚C −200µ −100µ −50µ −20µ −10µ −1 200 100 Ta=100˚C 25˚C −40˚C 50 20 10 5 −5µ −1µ 2 1 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) VO =−5V 500 −2µ −100m −100µ −200µ −500µ −1m Fig.2 Output current vs. input voltage (OFF characteristics) −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI =20 −500m OUTPUT VOLTAGE : VO (on) (V) 1k VCC=−5V −5m −50 DC CURRENT GAIN : GI −100 Ta=100˚C 25˚C −40˚C −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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