Soft Switching Series IHW30N60T q Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Applications: • Inductive Cooking • Soft Switching Applications Type IHW30N60T VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 30A 1.5V 175°C H30T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 Unit V A TC = 25°C 60 TC = 100°C 30 Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90 Diode forward current IF 23 13 TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax IFpuls 30 Gate-emitter voltage VGE ±20 Transient Gate-emitter voltage (tp < 5 ms) V ±25 2) tSC 5 µs Power dissipation TC = 25°C Ptot 187 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction – case RthJC 0.8 Diode thermal resistance, junction – case RthJCD 1.1 Thermal resistance, junction – ambient RthJA 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25°C - 1.5 2 T j = 175 °C - 1.9 - T j = 25°C - 1.1 1.3 T j = 150 °C - 1.0 - T j = 175 °C - 1.0 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =30A VGE=0V, IF=10A Gate-emitter threshold voltage VGE(th) I C =0 .43mA, V C E =V G E Zero gate voltage collector current ICES V C E = 60 0 V , VGE=0V T j = 25°C T j = 175 °C - - 40 1000 µA Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =30A - 16.7 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E =25V, - 1630 - Output capacitance Coss VGE=0V, - 108 - Reverse transfer capacitance Crss f=1MHz - 50 - Gate charge QGate V C C = 48 0 V, I C =30A - 167 - nC - 13 - nH - 275 - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E =15V,t S C ≤5 µs V C C = 400 V, T j = 1 50° C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 23 - - 21 - - 254 - - 46 - - - - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.77 - Total switching energy Ets - 0.77 - T j = 25°C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 Ω , L σ 1 ) =1 36nH, C σ 1 ) =39pF ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 24 - - 26 - - 292 - - 90 - - - - Unit IGBT Characteristic T j = 175 °C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 Ω L σ 1 ) =1 36nH, C σ 1 ) =39pF Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 1.1 - Total switching energy Ets - 1.1 - 1) ns mJ Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series tp=2µs 90A 10µs 70A 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A TC=80°C TC=110°C 50A 40A 30A Ic 20A 10A 50µs 1A 1ms DC 10ms 10A 0A 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10Ω) 1000V 50A IC, COLLECTOR CURRENT 120W 80W Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 160W 40W 0W 25°C 10V 40A 30A 20A 10A 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.2 Sep. 08 Soft Switching Series IHW30N60T q 80A 50A 60A V G E =20V V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 15V 50A 13V 11V 40A 9V 30A 7V 20A 40A 15V 13V 30A 11V 20A 7V 9V 10A 10A 0A 0A 0V 1V 2V 3V 0V IC, COLLECTOR CURRENT 50A 40A 30A 20A T J = 1 7 5 °C 10A 2 5 °C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 1V 2.5V IC =60A 2.0V IC =30A 1.5V IC =15A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series t d(off) tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) t d(on) 10ns tf 100ns t d(on) tr tr 1ns 0A 10A 20A 10ns 30A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E) 10Ω 20Ω 30Ω 40Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) tr 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA) 6 Rev. 2.2 Sep. 08 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Soft Switching Series Eoff 1.5mJ 1.0mJ 0.5mJ 0.0mJ Eoff 1,5mJ 1,0mJ 0,5mJ 0,0mJ 0A 10A 20A 30A 40A 0Ω 50A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 50°C 75°C 1,50mJ Eoff 1,25mJ 1,00mJ 0,75mJ 0,50mJ 0,25mJ 0,00mJ 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E) Power Semiconductors E, SWITCHING ENERGY LOSSES Eoff 0.5mJ 0.0mJ 25°C 10Ω 1,75mJ 1.0mJ E, SWITCHING ENERGY LOSSES IHW30N60T q 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E) 7 Rev. 2.2 Sep. 08 C iss 1nF 1 5V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Soft Switching Series IHW30N60T q 12 0V 48 0V 1 0V C oss 100pF 5V C rss 0V 0 nC 30 nC 60 nC 0V 90 nC 12 0n C 15 0n C 18 0n QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 400A 300A 200A 100A 0A 12V tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series 0.2 0.1 -1 10 K/W R,(K/W) 0.29566 0.25779 0.19382 0.05279 0.05 0.02 τ, (s) -2 6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45*10 R1 R2 0.01 -2 10 K/W C1=τ1/R1 C2=τ2/R2 single pulse 1µs 10µs 100µs 1ms ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0 10 K/W D=0.5 0.2 0.1 -1 10 K/W 0.05 R1 0.02 R2 0.01 single pulse 10ms 100ms 10µs tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) τ, (s) -2 9.45*10 -2 2.55*10 -3 3.6*10 -4 5.1*10 -4 1.09*10 R,(K/W) 0.0715 0.2222 0.4265 0.364 0.0181 100µs 1ms C1= τ1/R1 C2= τ2/R2 10ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) IF=20A TJ=25°C 175°C 10A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 30A 20A 10A 0A 0.0V 0.5V 1.0V 1.0V 3A 0.5V 0.0V -50°C 1.5V VF, FORWARD VOLTAGE Figure 23. Typical diode forward current as a function of forward voltage Power Semiconductors 100ms 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 24. Typical diode forward voltage as a function of junction temperature 9 Rev. 2.2 Sep. 08 Soft Switching Series IHW30N60T q PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 0.780 0.164 0.138 0.216 0.238 20.31 4.47 3.70 6.00 6.30 10 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.2 Sep. 08 IHW30N60T q Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.2 Sep. 08 Soft Switching Series IHW30N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 Sep. 08