MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features MARKING DIAGRAMS • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage − • • • • • • 4 1 2 VCE(sat) = 1.0 Volt Max @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Packages* 3 AYWW J4 xH11G DPAK CASE 369C STYLE 1 4 1 AYWW J4 xH11G 2 3 A Y WW J4xH11 G IPAK CASE 369D STYLE 1 = = = = Assembly Location Year Work Week Device Code x = 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 14 1 Publication Order Number: MJD44H11/D MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol Max Unit VCEO 80 Vdc VEB 5 Vdc IC 8 16 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg 20 0.16 W W/°C W 1.75 0.014 W/°C −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W TL 260 °C Lead Temperature for Soldering 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 2 MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) Characteristic Symbol Min VCEO(sus) 80 Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES 1.0 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO 1.0 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) 1 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) 1.5 Vdc ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 60 − 40 DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG MJD45H11, NJVMJD45H11T4G/RLG Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG MJD45H11, NJVMJD45H11T4G/RLG Ccb fT pF 45 130 MHz 85 90 SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc MJD44H11, NJVMJD44H11G,/T4G/RLG MJD45H11, NJVMJD45H11T4G/RLG MJD44H11, NJVMJD44H11G,/T4G/RLG MJD45H11, NJVMJD45H11T4G/RLG MJD44H11, NJVMJD44H11G,/T4G/RLG MJD45H11, NJVMJD45H11T4G/RLG http://onsemi.com 3 td + tr ts tf ns 300 135 ns 500 500 ns 140 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc 100ms 1ms 5ms 1 THERMAL LIMIT @ TC = 25°C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 50 5 7 10 20 30 3 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 4 125 150 MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) 1000 VCE = 1 V VCE = 1 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 150°C 25°C 100 10 −55°C 0.01 0.1 1 150°C 25°C 10 10 −55°C 100 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 hFE, DC CURRENT GAIN 150°C 25°C 10 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) VCE = 4 V −55°C 0.01 0.1 1 0.01 0.1 1 10 Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain IC/IB = 20 150°C 0.5 0.4 25°C 0.3 0.2 −55°C 0.1 0.01 −55°C 100 IC, COLLECTOR CURRENT (A) 0.6 0 25°C IC, COLLECTOR CURRENT (A) 0.8 0.7 150°C 10 10 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 4 V 100 10 IC, COLLECTOR CURRENT (A) 0.1 1 10 0.8 IC/IB = 20 0.7 −55°C 0.6 0.5 0.4 25°C 0.3 150°C 0.2 0.1 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. MJD44H11 Saturation Voltage VCE(sat) Figure 9. MJD45H11 Saturation Voltage VCE(sat) http://onsemi.com 5 10 MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) 1.4 1.0 0.8 −55°C 25°C 0.6 0.4 150°C IC/IB = 20 0.2 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 1.2 0.01 0.1 1 −55°C 0.8 25°C 0.6 150°C 0.4 IC/IB = 20 0.2 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 10. MJD44H11 Saturation Voltage VBE(sat) Figure 11. MJD45H11 Saturation Voltage VBE(sat) 1.8 TA = 25°C 1.6 1.4 1.2 1.0 0.8 0.6 IC = 8 A 0.4 1A 0.2 IC = 0.1 A 0.5 A 0 0.1 1 10 IC = 3 A 100 1000 10,000 2.0 1.8 TA = 25°C 1.6 1.4 1.2 1.0 0.8 IC = 8 A 0.6 IC = 3 A 0.4 0.2 I = 0.1 A 0.5 A C 0 0.1 1 1A 10 100 1000 10,000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 12. MJD44H11 Collector Saturation Region Figure 13. MJD45H11 Collector Saturation Region 1000 C, CAPACITANCE (pF) 1000 C, CAPACITANCE (pF) 1.0 IC, COLLECTOR CURRENT (A) 2.0 Cob 100 10 1.2 0 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 1.4 0.1 1 10 Cob 100 10 100 0.1 1 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance http://onsemi.com 6 100 MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) 100 VCE = 2 V 10 0.01 fTau, CURRENT−GAIN−BANDWIDTH PRODUCT fTau, CURRENT−GAIN−BANDWIDTH PRODUCT 100 0.1 1 10 10 VCE = 2 V 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. MJD44H11 Current−Gain−Bandwidth Product Figure 17. MJD45H11 Current−Gain−Bandwidth Product 10 ORDERING INFORMATION Device Package Type MJD44H11G DPAK (Pb−Free) NJVMJD44H11G DPAK (Pb−Free) MJD44H11−1G DPAK−3 (Pb−Free) MJD44H11RLG DPAK (Pb−Free) NJVMJD44H11RLG DPAK (Pb−Free) MJD44H11T4G DPAK (Pb−Free) NJVMJD44H11T4G DPAK (Pb−Free) MJD44H11T5G DPAK (Pb−Free) MJD45H11G DPAK (Pb−Free) MJD45H11−1G DPAK−3 (Pb−Free) MJD45H11RLG DPAK (Pb−Free) NJVMJD45H11RLG DPAK (Pb−Free) MJD45H11T4G DPAK (Pb−Free) NJVMJD45H11T4G DPAK (Pb−Free) Package Shipping† 369C 75 Units / Rail 369D 1,800 / Tape & Reel 369C 2,500 / Tape & Reel 75 Units / Rail 369D 1,800 / Tape & Reel 369C 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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