HIT8050-N Silicon NPN Epitaxial REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Features • Low frequency power amplifier • Complementary pair with HIT8550-N Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Page 1 of 4 Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings 45 25 6 0.7 1.0 0.625 150 Unit V V V A A W °C –55 to +150 °C HIT8050-N Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) Min. 45 25 6 — — 45 85 — — Typ — — — — — — — — — Max. — — — 500 500 — 330 0.5 1.0 Unit V V V nA nA — — V V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 45 V, IE = 0 VEB = 6 V VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 3 V, IC = 10 mA Main Characteristics 1200 Collector Current IC (mA) 1000 1000 800 600 400 200 0 50 100 8 mA 7 mA 6 mA 5 mA 800 4 mA 600 P 3 mA C =6 25 2 mA 400 mW 1 mA 200 0 0.8 0.4 1.2 1.6 2.0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 250 25°C 200 -25°C 150 100 50 VCE = 1 V 1 0 150 Ta = 75°C 0 10 mA 9 mA IB = 0 0 300 DC Current Transfer Ratio hFE Typical Output Characteristics 10 100 Collector Current IC (mA) REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Page 2 of 4 1000 Collector Output Capacitance Cob (pF) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 100 f = 1 MHz IE = 0 10 1 0.1 1 10 100 Collector to Base Voltage VCB (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) HIT8050-N Typical Transfer Characteristics 100 1.2 VCE = 3 V Collector Current IC (mA) Collector to Emitter, Base to Emitter Saturation Voltage vs. Collector Current IC = 10 IB 1.0 Ta = 75°C VBE(sat) 0.8 10 25°C 0.6 -25°C 1 0.4 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 VCE(sat) 0 1 Base to Emitter Voltage VBE (V) 10 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 400 350 VCE = 1 V 300 250 200 150 100 50 0 1 10 100 Collector Current IC (mA) REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Page 3 of 4 100 1000 1000 HIT8050-N Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A 4.8 ± 0.3 MASS[Typ.] 0.25g Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name HIT8050-N-EQ HIT8050-N-TZ-EQ Quantity 2500 pcs. 2500 pcs. Shipping Container Bulk, Vinyl Bag Hold Box, Radial Taping Note: This product is designed for consumer use and not for automotive. REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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