Elpida HM5118165J-6 16 m edo dram (1-mword x 16-bit) 1 k refresh Datasheet

16 M EDO DRAM (1-Mword × 16-bit)
1 k Refresh
E0154H10 (Ver. 1.0)
(Previous ADE-203-636D (Z))
Jul. 6, 2001 (K)
LP
EO
Description
HM5118165 Series
The HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most
advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers Extended
Data Out (EDO) Page Mode as a high speed access mode. It is packaged in 42-pin plastic SOJ and 50-pin
plastic TSOP II.
Features
ct
du
ro
• Single 5 V (±10%)
• Access time : 50 ns/60 ns/70 ns (max)
• Power dissipation
 Active mode : 1045 mW/935 mW/825 mW (max)
 Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
• EDO page mode capability
• Refresh cycles
 1024 refresh cycles : 16 ms
: 128 ms (L-version)
• 4 variations of refresh
 RAS-only refresh
 CAS-before-RAS refresh
 Hidden refresh
 Self refresh (L-version)
• 2CAS-byte control
• Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
EO
HM5118165 Series
Ordering Information
Type No.
Access time
Package
HM5118165J-5
HM5118165J-6
HM5118165J-7
50 ns
60 ns
70 ns
400-mil 42-pin plastic SOJ (CP-42D)
HM5118165LJ-5
HM5118165LJ-6
HM5118165LJ-7
50 ns
60 ns
70 ns
HM5118165TT-5
HM5118165TT-6
HM5118165TT-7
50 ns
60 ns
70 ns
LP
HM5118165LTT-5
HM5118165LTT-6
HM5118165LTT-7
400-mil 50-pin plastic TSOP II (TTP-50/44DC)
50 ns
60 ns
70 ns
ct
du
ro
Data Sheet E0154H10
2
EO
HM5118165 Series
Pin Arrangement
HM5118165J/LJ Series
HM5118165TT/LTT Series
1
42
VSS
I/O0
2
41
I/O15
I/O1
3
40
I/O14
I/O2
4
39
I/O13
I/O3
5
38
I/O12
6
37
VSS
7
36
I/O11
8
35
I/O10
9
34
I/O9
10
33
I/O8
11
32
NC
12
31
LCAS
13
30
UCAS
14
29
OE
15
28
A9
16
27
A8
A7
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
17
26
A1
18
25
A2
19
24
A3
20
23
21
22
A0
VCC
(Top view)
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V SS
I/O15
I/O14
I/O13
I/O12
V SS
I/O11
I/O10
I/O9
I/O8
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
ro
LP
VCC
A6
A5
A4
VSS
Function
A0 to A9
Address input
— Row/Refresh address A0 to A9
— Column address
A0 to A9
I/O0 to I/O15
Data input/Data output
RAS
Row address strobe
UCAS, LCAS
Column address strobe
WE
Read/Write enable
OE
Output enable
VCC
Power supply
VSS
Ground
NC
No connection
ct
Pin name
du
Pin Description
(Top view)
Data Sheet E0154H10
3
EO
HM5118165 Series
Block Diagram
A1
Column
•
•
•
A9
address
buffers
Row
address
buffers
OE
Column decoder
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
1M array
I/O buffers
ct
du
ro
•
•
•
WE
Timing and control
Row decoder
to
UCAS LCAS
LP
A0
RAS
Data Sheet E0154H10
4
I/O0
to
I/O15
EO
HM5118165 Series
Truth Table
RAS
LCAS
UCAS
WE
OE
Output
Operation
H
D
D
D
D
Open
Standby
L
L
H
H
L
Valid
Lower byte Read cycle
L
H
L
H
L
Valid
Upper byte
L
L
L
H
L
Valid
Word
D
Open
Lower byte Early write cycle
L
L
L
L
H
L
L
H
H
L
LP
L
L
*2
L
L
H
L
L*
2
D
Open
Upper byte
L*
2
D
Open
Word
L*
2
H
Undefined
Lower byte Delayed write cycle
L*
2
H
Undefined
Upper byte
2
H
Undefined
Word
L
L
L*
L
L
H
H to L
L to H
Valid
Lower byte Read-modify-write cycle
L
H
L
H to L
L to H
Valid
Upper byte
L
L
L
H to L
L to H
Valid
Word
L
H
H
D
D
Open
Word
RAS-only refresh cycle
H to L
H
L
D
D
Open
Word
CAS-before-RAS refresh cycle or
H to L
L
H
D
D
Open
Word
Self refresh cycle (L-version)
H to L
L
L
D
D
Open
Word
L
L
L
H
H
ro
L
Open
Read cycle (Output disabled)
ct
du
Notes: 1. H: High (inactive) L: Low (active) D: H or L
2. t WCS ≥ 0 ns Early write cycle
t WCS < 0 ns Delayed write cycle
3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by the earliest of
UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.) However
write OPERATION and output High-Z control are done independently by each UCAS, LCAS.
ex. if RAS = H to L, UCAS = H, LCAS = L, then CAS-before-RAS refresh cycle is selected.
Data Sheet E0154H10
5
EO
HM5118165 Series
Absolute Maximum Ratings
Symbol
Value
Unit
Voltage on any pin relative to V SS
VT
–1.0 to +7.0
V
Supply voltage relative to VSS
VCC
–1.0 to +7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
–55 to +125
°C
Storage temperature
LP
Parameter
Tstg
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Symbol
Min
Typ
Max
Unit
Notes
VCC
4.5
5.0
5.5
V
1, 2
VIH
2.4
—
6.5
V
1
VIL
–1.0
—
0.8
V
1
ro
Notes: 1. All voltage referred to VSS
2. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins
must be on the same level.
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
HM5118165
Parameter
1,
Operating current* *
Standby current
Symbol
Min Max Min Max Min Max Unit
Test conditions
I CC1
—
200 —
170 —
150 mA
t RC = min
I CC2
—
2
—
2
—
2
mA
TTL interface
RAS, UCAS, LCAS = VIH
Dout = High-Z
—
1
—
1
—
1
mA
CMOS interface
RAS, UCAS,
LCAS ≥ VCC – 0.2 V
Dout = High-Z
—
150 —
I CC2
150 —
Data Sheet E0154H10
6
-7
150 µA
ct
Standby current
(L-version)
2
-6
du
-5
CMOS interface
RAS, UCAS,
LCAS ≥ VCC – 0.2 V
Dout = High-Z
EO
HM5118165 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V) (cont.)
HM5118165
-5
Parameter
2
RAS-only refresh current*
1
Standby current*
-6
Symbol
Min Max Min Max Min Max Unit
Test conditions
I CC3
—
200 —
170 —
150 mA
t RC = min
I CC5
—
5
5
5
RAS = VIH,
UCAS, LCAS = VIL
Dout = enable
—
LP
CAS-before-RAS refresh
current
-7
—
mA
I CC6
—
190 —
170 —
150 mA
t RC = min
EDO page mode current*1, * 3 I CC7
—
185 —
165 —
145 mA
t HPC = min
4
I CC10
—
500 —
500 —
500 µA
CMOS interface
Dout = High-Z
CBR refresh: tRC = 125
µs
t RAS ≤ 0.3 µs
Self refresh mode current
(L-version)
I CC11
—
300 —
300 —
300 µA
CMOS interface
RAS, UCAS, LCAS ≤ 0.2
V
Dout = High-Z
Input leakage current
I LI
–10 10
–10 10
–10 10
µA
0 V ≤ Vin ≤ 7 V
Output leakage current
I LO
–10 10
–10 10
–10 10
µA
0 V ≤ Vout ≤ 7 V
Dout = disable
Output high voltage
VOH
2.4
Output low voltage
VOL
0
ro
Battery backup current*
(Standby with CBR refresh)
(L-version)
VCC 2.4
VCC 2.4
VCC
V
High Iout = –2 mA
0.4
0.4
0.4
V
Low Iout = 2 mA
0
0
Typ
Max
Unit
Notes
—
5
pF
1
CI2
—
7
pF
1
CI/O
—
7
pF
1, 2
Capacitance (Ta = 25°C, VCC = 5 V ± 10%)
Parameter
Symbol
Input capacitance (Address)
CI1
Input capacitance (Clocks)
Output capacitance (Data-in, Data-out)
ct
du
Notes: 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while UCAS and LCAS = VIH.
4. VIH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V.
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. RAS, UCAS and LCAS = VIH to disable Dout.
Data Sheet E0154H10
7
EO
HM5118165 Series
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)*1, *2, *18, *19, *20
Test Conditions
Input rise and fall time: 2 ns
Input levels: 0 V, 3.0 V
Input timing reference levels: 0.8 V, 2.4 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C L (100 pF) (Including scope and jig)
LP
•
•
•
•
•
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
Parameter
HM5118165
-5
-6
-7
Min
Max
Min
Max
Min
Max
Unit
Random read or write cycle time
t RC
84
—
104
—
124
—
ns
RAS precharge time
t RP
30
—
40
—
50
—
ns
t CP
7
—
10
—
13
—
ns
t RAS
50
10000 60
10000 70
10000 ns
7
10000 10
10000 13
10000 ns
0
—
0
—
0
—
ns
7
—
10
—
10
—
ns
0
—
0
—
0
—
ns
21
7
—
10
—
13
—
ns
21
11
37
14
45
14
52
ns
3
12
30
12
35
ns
4
13
—
13
—
ns
40
—
45
—
ns
23
5
—
5
—
ns
22
15
—
18
—
ns
5
0
—
0
—
ns
6
0
—
0
—
ns
6
2
50
2
CAS precharge time
RAS pulse width
t CAS
Row address setup time
t ASR
Row address hold time
t RAH
Column address setup time
t ASC
Column address hold time
t CAH
RAS to CAS delay time
t RCD
RAS to column address delay time
t RAD
9
25
RAS hold time
t RSH
10
—
CAS hold time
t CSH
35
—
CAS to RAS precharge time
t CRP
5
—
OE to Din delay time
t OED
13
—
OE delay time from Din
t DZO
0
—
CAS delay time from Din
t DZC
0
—
Transition time (rise and fall)
tT
2
50
Data Sheet E0154H10
8
Notes
ct
CAS pulse width
du
ro
Symbol
50
ns
7
EO
HM5118165 Series
Read Cycle
HM5118165
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Access time from RAS
t RAC
—
50
—
60
—
70
ns
8, 9
Access time from CAS
t CAC
—
13
—
15
—
18
ns
9, 10, 17
Access time from address
t AA
—
25
—
30
—
35
ns
9, 11, 17
Access time from OE
t OEA
—
13
—
15
—
18
ns
9
Read command setup time
t RCS
0
—
0
—
0
—
ns
21
Read command hold time to CAS
t RCH
0
—
0
—
0
—
ns
12, 22
Read command hold time from
RAS
t RCHR
50
—
60
—
70
—
ns
Read command hold time to RAS
t RRH
0
—
0
—
0
—
ns
Column address to RAS lead time
t RAL
25
—
30
—
35
—
ns
Column address to CAS lead time
t CAL
15
—
18
—
23
—
ns
CAS to output in low-Z
t CLZ
0
—
0
—
0
—
ns
Output data hold time
t OH
3
—
3
—
3
—
ns
Output data hold time from OE
t OHO
Output buffer turn-off time
t OFF
Output buffer turn-off to OE
t OEZ
CAS to Din delay time
t CDD
Output data hold time from RAS
t OHR
Output buffer turn-off to RAS
t OFR
ro
Output buffer turn-off to WE
LP
Parameter
12
27
—
3
—
3
—
ns
—
13
—
15
—
15
ns
13, 27
—
13
—
15
—
15
ns
13
13
—
15
—
18
—
ns
5
3
—
3
—
3
—
ns
27
—
13
—
15
—
15
ns
27
t WEZ
—
13
WE to Din delay time
t WED
13
—
RAS to Din delay time
t RDD
13
—
RAS next CAS delay time
t RNCD
50
—
du
3
—
15
—
15
ns
15
—
18
—
ns
15
—
18
—
ns
60
—
70
—
ns
ct
Data Sheet E0154H10
9
EO
HM5118165 Series
Write Cycle
HM5118165
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Write command setup time
t WCS
0
—
0
—
0
—
ns
14, 21
Write command hold time
t WCH
7
—
10
—
13
—
ns
21
Write command pulse width
t WP
7
—
10
—
10
—
ns
LP
Write command to RAS lead time
t RWL
7
—
10
—
13
—
ns
Write command to CAS lead time
t CWL
7
—
10
—
13
—
ns
23
Data-in setup time
t DS
0
—
0
—
0
—
ns
15, 23
t DH
7
—
10
—
13
—
ns
15, 23
Notes
Data-in hold time
Read-Modify-Write Cycle
-5
-6
-7
ro
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Read-modify-write cycle time
t RWC
111
—
135
—
161
—
ns
RAS to WE delay time
t RWD
67
—
79
—
92
—
ns
14
CAS to WE delay time
t CWD
30
—
34
—
40
—
ns
14
Column address to WE delay time
t AWD
42
—
49
—
57
—
ns
14
OE hold time from WE
t OEH
13
—
15
—
18
—
ns
HM5118165
-5
Parameter
Symbol
-6
Max
CAS setup time (CBR refresh cycle) t CSR
5
—
CAS hold time (CBR refresh cycle) t CHR
7
—
RAS precharge to CAS hold time
5
—
Data Sheet E0154H10
10
-7
Min
Max
Min
Max
Unit
Notes
5
—
5
—
ns
21
10
—
10
—
ns
22
5
—
5
—
ns
21
ct
Min
t RPC
du
Refresh Cycle
EO
HM5118165 Series
EDO Page Mode Cycle
HM5118165
-5
-6
-7
Symbol
Min Max
Min Max
Min Max
Unit
Notes
EDO page mode cycle time
t HPC
20
—
25
30
ns
25
EDO page mode RAS pulse width
t RASP
—
100000 —
100000 —
100000 ns
16
Access time from CAS precharge
t CPA
—
28
—
35
—
40
ns
9, 17, 22
RAS hold time from CAS precharge t CPRH
28
—
35
—
40
—
ns
Output data hold time from CAS low t DOH
3
—
3
—
3
—
ns
CAS hold time referred OE
t COL
7
—
10
—
13
—
ns
CAS to OE setup time
t COP
5
—
5
—
5
—
ns
Read command hold time from
CAS precharge
t RCHC
28
—
35
—
40
—
ns
LP
Parameter
—
—
9
EDO Page Mode Read-Modify-Write Cycle
ro
HM5118165
-5
Parameter
Symbol
EDO page mode read-modify-write t HPRWC
cycle time
WE delay time from CAS precharge t CPW
-6
-7
Min
Max
Min
Max
Min
Max
Unit
57
—
68
—
79
—
ns
45
—
54
—
62
—
ns
du
Refresh
Notes
14, 22
Parameter
Symbol
Max
Unit
Note
Refresh period
t REF
16
ms
1024 cycles
Refresh period (L-version)
t REF
128
ms
1024 cycles
ct
Data Sheet E0154H10
11
EO
HM5118165 Series
Self Refresh Mode (L-version)
HM5118165L
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
RAS pulse width (self refresh)
t RASS
100
—
100
—
100
—
µs
28, 29, 30,
31
RAS precharge time (self refresh)
t RPS
90
—
110
—
130
—
ns
CAS hold time (self refresh)
t CHS
–50
—
–50
—
–50
—
ns
LP
Parameter
ct
du
ro
Notes: 1. AC measurements assume t T = 2 ns.
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh).
3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a
reference point only; if t RCD ≥ tRAD (max) + tAA (max) – tCAC (max), then access time is controlled
exclusively by t CAC .
4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a
reference point only; if t RAD is greater than the specified tRAD (max) limit, then access time is
controlled exclusively by tAA .
5. Either t OED or tCDD must be satisfied.
6. Either t DZO or tDZC must be satisfied.
7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition
times are measured between V IH (min) and VIL (max).
8. Assumes that t RCD ≤ tRCD (max) and tRAD ≤ tRAD (max). If tRCD or tRAD is greater than the maximum
recommended value shown in this table, t RAC exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that t RCD ≥ tRCD (max) and tRCD + tCAC (max) ≥ tRAD + tAA (max).
11. Assumes that t RAD ≥ tRAD (max) and tRCD + tCAC (max) ≤ tRAD + tAA (max).
12. Either t RCH or tRRH must be satisfied for a read cycles.
13. t OFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition and
are not referred to output voltage levels.
14. t WCS , t RWD, t CWD, t AWD and t CPW are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only; if t WCS ≥ tWCS (min), the cycle is an early write cycle and the
data out pin will remain open circuit (high impedance) throughout the entire cycle; if t RWD ≥ tRWD
(min), tCWD ≥ tCWD (min), and tAWD ≥ tAWD (min), or tCWD ≥ tCWD (min), tAWD ≥ tAWD (min) and tCPW ≥ tCPW
(min), the cycle is a read-modify-write and the data output will contain data read from the selected
cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access
time) is indeterminate.
15. These parameters are referred to UCAS and LCAS leading edge in early write cycles and to WE
leading edge in delayed write or read-modify-write cycles.
16. t RASP defines RAS pulse width in EDO page mode cycles.
17. Access time is determined by the longest among t AA , t CAC and t CPA.
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to
the device.
19. When both UCAS and LCAS go low at the same time, all 16-bit data are written into the device.
UCAS and LCAS cannot be staggered within the same write/read cycles.
Data Sheet E0154H10
12
EO
HM5118165 Series
ct
du
ro
LP
20 All the V CC and VSS pins shall be supplied with the same voltages.
21. t ASC, tCAH , t RCS , t WCS , t WCH, t CSR and t RPC are determined by the earlier falling edge of UCAS or LCAS.
22. t CRP , t CHR, t RCH, t CPA and tCPW are determined by the later rising edge of UCAS or LCAS.
23. t CWL, t DH, t DS and t CSH should be satisfied by both UCAS and LCAS.
24. t CP is determined by the time that both UCAS and LCAS are high.
25. t HPC (min) can be achieved during a series of EDO page mode write cycles or EDO page mode read
cycles. If both write and read operation are mixed in a EDO page mode RAS cycle (EDO page
mode mix cycle (1), (2)), minimum value of CAS cycle (tCAS + tCP + 2 tT) becomes greater than the
specified t HPC (min) value. The value of CAS cycle time of mixed EDO page mode is shown in EDO
page mode mix cycle (1) and (2).
26. When output buffers are enabled once, sustain the low impedance state until valid data is obtained.
When output buffer is turned on and off within a very short time, generally it causes large VCC/VSS
line noise, which causes to degrade VIH min/VIL max level.
27. Data output turns off and becomes high impedance from later rising edge of RAS and CAS. Hold
time and turn off time are specified by the timing specifications of later rising edge of RAS and CAS
between tOHR and t OH , and between t OFR and t OFF.
28. Please do not use tRASS timing, 10 µs ≤ tRASS ≤ 100 µs. During this period, the device is in transition
state from normal operation mode to self refresh mode. If t RASS ≥ 100 µs, then RAS precharge time
should use t RPS instead of tRP.
29. If you use distributed CBR refresh mode with 15.6 µs interval in normal read/write cycle, CBR
refresh should be executed within 15.6 µs immediately after exiting from and before entering into
self refresh mode.
30. If you use RAS only refresh or CBR burst refresh mode in normal read/write cycle, 1024 cycles of
distributed CBR refresh with 15.6 µs interval should be executed within 16 ms immediately after
exiting from and before entering into the self refresh mode.
31. Repetitive self refresh mode without refreshing all memory is not allowed. Once you exit from self
fresh mode, all memory cells need to be refreshed before re-entering the self refresh mode again.
32. XXX: H or L (H: VIH (min) ≤ VIN ≤ VIH (max), L: VIL (min) ≤ VIN ≤ VIL (max))
///////: Invalid Dout
When the address, clock and input pins are not described on timing waveforms, their pins must be
applied V IH or VIL.
Data Sheet E0154H10
13
EO
HM5118165 Series
Notes concerning 2CAS control
Please do not separate the UCAS/LCAS operation timing intentionally.
UCAS/LCAS are allowed under the following conditions.
However skew between
1. Each of the UCAS/LCAS should satisfy the timing specifications individually.
2. Different operation mode for upper/lower byte is not allowed; such as following.
UCAS
LCAS
WE
LP
RAS
Delayed write
Early write
RAS
UCAS
du
LCAS
ro
3. Closely separated upper/lower byte control is not allowed. However when the condition (tCP ≤ tUL) is
satisfied, EDO page mode can be performed.
t UL
4. Byte control operation by remaining UCAS or LCAS high is guaranteed.
ct
Data Sheet E0154H10
14
EO
HM5118165 Series
Timing Waveforms*32
Read Cycle
t RC
t RAS
t RP
RAS
LP
t CSH
t CRP
t RCD
t RSH
t CAS
tT
UCAS
LCAS
t RAD
t ASR
Address
t RAH
t ASC
t RAL
t CAL
t CAH
Column
Row
ro
t RRH
t RCHR
t RCS
WE
t DZC
t DZO
t OEA
OE
t WED
t CDD
t RDD
du
High-Z
Din
t RCH
t OED
t AA
ct
t OEZ
t OHO
t OFF
t CAC
t OH
t OFR
t OHR
t RAC
t CLZ
t WEZ
Dout
Dout
Data Sheet E0154H10
15
EO
HM5118165 Series
Early Write Cycle
tRC
tRAS
tRP
RAS
tCSH
tCRP
LP
tRCD
tRSH
tCAS
tT
UCAS
LCAS
tASR
Address
tRAH
Row
tASC
tCAH
Column
ro
tWCS
WE
tWCH
Din
Din
High-Z*
ct
Dout
tDH
du
tDS
* t WCS
Data Sheet E0154H10
16
t WCS (min)
EO
HM5118165 Series
Delayed Write Cycle*18
t RC
t RAS
t RP
RAS
t CSH
t CRP
LP
t RCD
t RSH
t CAS
tT
UCAS
LCAS
t ASR
Address
t RAH
t ASC
Row
t CAH
Column
t CWL
ro
t RCS
WE
t DZC
t DH
du
Din
t DS
t RWL
t WP
High-Z
Din
t OEH
t OED
OE
t OEZ
t CLZ
ct
#
t DZO
High-Z
Dout
Invalid Dout
Data Sheet E0154H10
17
EO
HM5118165 Series
Read-Modify-Write Cycle*18
t RWC
t RAS
t RP
RAS
LCAS
t RCD
LP
UCAS
tT
t CAS
t CRP
t RAD
t ASR
Address
t RAH
t ASC
Row
WE
Column
t CWD
ro
t RCS
t CAH
tCWL
t AWD
t RWL
t RWD
t WP
t DZC
t DS
du
High-Z
Din
t DH
Din
t OED
t DZO
t OEH
t OEA
OE
t OEZ
t AA
t RAC
t OHO
Dout
Dout
t CLZ
Data Sheet E0154H10
18
ct
t CAC
High-Z
EO
HM5118165 Series
RAS-Only Refresh Cycle
t RC
t RAS
t RP
RAS
LCAS
t CRP
LP
UCAS
tT
t ASR
Address
t RPC
t CRP
t RAH
Row
t OFR
t OFF
ct
du
!
High-Z
ro
Dout
Data Sheet E0154H10
19
EO
HM5118165 Series
CAS-Before-RAS Refresh Cycle
t RC
t RP
t RAS
t RC
t RP
t RAS
t RP
RAS
tT
LP
t RPC
t CP
t CHR
t CRP
t CSR
t CHR
")#
UCAS
t CSR
t RPC
t CP
LCAS
Address
t OFR
Dout
ro
t OFF
High-Z
ct
du
Data Sheet E0154H10
20
EO
HM5118165 Series
Hidden Refresh Cycle
t RC
t RAS
t RC
t RAS
t RP
t RC
t RP
t RAS
t RP
RAS
tT
t CHR
LP
t RSH
t CRP
t RCD
UCAS
LCAS
t RAD
t ASR t RAH
Address
t RAL
t ASC
Row
t CAH
Column
t RRH
t RCH
ro
t RCS
WE
t DZC
t WED
t CDD
t RDD
t DZO
t OEA
OE
t CAC
t AA
t CLZ
Dout
Dout
t OED
t OFF
t OH
t OEZ
t WEZ
t OHO
ct
t RAC
du
High-Z
Din
t OFR
t OHR
Data Sheet E0154H10
21
EO
HM5118165 Series
EDO Page Mode Read Cycle
t RP
t RNCD
RAS
tT
t CSH
LP
Address
tRAH tASC
Row
t CP
t HPC
tCAS
tCAS
t RCHC
t RCH t RCS
tCAH
Column 1
t ASC t CAH
t ASC t CAH
Column 2
Column 3
t CAL
t CRP
t CPRH
t CP
t
RSH
t CAS
t RCHR
t RCS
tASR
t HPC
t CP
t CAS
UCAS
LCAS
WE
t HPC
t RASP
t CAL
t RRH
t RCH
t RAL
t CAH
tASC
t WED
Column 4
t CAL
t CAL
tRDD
tCDD
tDZC
Din
High-Z
ro
tCOL
tCOP
tOED
tDZO
OE
tCPA
tOEA
tAA
tCAC
tCAC
tAA
tWEZ
tOEZ
tOHO
du
Dout
tDOH
Dout 1
tAA
tOEZ
tOEA
tRAC
Dout 2
tOFR
tOHR
tOEZ
tCPA
tCPA
tAA
tCAC
Dout 2
tOHO
Dout 3
tCAC
tOHO
tOFF
tOH
tOEA
Dout 4
ct
Data Sheet E0154H10
22
EO
HM5118165 Series
EDO Page Mode Read Cycle (2CAS)
t RP
t RNCD
t RASP
RAS
tT
t CSH
t CAS
LCAS
tHPC
t CP
t CRP
t HPC
t CP
tRSH
t CAS
LP
UCAS
t HPC
t CP
tCAS
t CAS
t RCHC
t RRH
t RCH
t RCS
WE
tASR
Address
tRAH tASC
Row
tCAH
Column 1
t ASC t CAH
t ASC t CAH
Column 2
Column 3
t CAL
High-Z
t CAL
tRDD
t CAL
tCDD
tCOL
tCOP
tOED
OE
tOEA
tCPA
tAA
tCAC
tCAC
tAA
tOHO
tDOH
tRAC
L Dout
tOEZ
du
tDZO
t WED
Column 4
ro
tDZC
Din
t CAL
t RAL
t CAH
tASC
tOEZ
tOEA
tAA
tCAC
tOHO
Dout 1
Dout 2
tOHO
tOFF
tOH
tOEA
ct
Dout 1
tOFR
tOHR
tOEZ
Dout 4
Dout 2
tCPA
tAA
tCAC
U Dout
tCPA
Dout 3
Dout 4
Data Sheet E0154H10
23
EO
HM5118165 Series
EDO Page Mode Early Write Cycle
tRP
tRASP
RAS
tT
tCSH
LP
UCAS
LCAS
tASR
Address
tHPC
tCAS
tRCD
Row
tRAH
tASC
tCAH
Column 1
tWCH
WE
Din
Dout
tDH
Din 1
tASC
tCAH
Column 2
tWCH
tWCS
tDS
tDH
tCP
tCAS
tASC
tCRP
tCAH
Column N
tWCS
tDS
tWCH
tDH
du
tDS
tRSH
tCAS
ro
tWCS
tCP
Din 2
Din N
High-Z*
ct
* t WCS
Data Sheet E0154H10
24
t WCS (min)
EO
HM5118165 Series
EDO Page Mode Delayed Write Cycle*18
t RASP
t RP
RAS
tT
t CP
LP
t CSH
t RCD
UCAS
LCAS
t CRP
t CP
t HPC
t CAS
t CAS
t RSH
t CAS
t RAD
t ASR
t ASC
t RAH
Address
t ASC
t CAH
Row
t ASC
t CAH
Column 1
t CAH
Column 2
t CWL
WE
t WP
t DZC t DS
t CWL
t RCS
t WP
t WP
t DZC t DS
t DZC t DS
t DH
t DZO
t DH
Din
2
Din
N
t DZO
#
t DZO
t DH
du
Din
1
Din
t CWL
t RWL
t RCS
ro
t RCS
Column N
t OED
t OED
t OED
t OEH
t OEH
OE
t CLZ
t CLZ
t OEZ
t OEH
t CLZ
t OEZ
t OEZ
ct
High-Z
Dout
Invalid Dout
Invalid Dout
Invalid Dout
Data Sheet E0154H10
25
EO
HM5118165 Series
EDO Page Mode Read-Modify-Write Cycle*18
t RASP
t RP
RAS
tT
t HPRWC
t RCD
UCAS
LCAS
t RSH
t CP
LP
t CP
t CAS
t CAS
t CRP
t CAS
t RAD
t ASR
Address
t ASC
t RAH
Row
t ASC
t CAH
t CAH
Column 1
t RWD
Column 2
t CWL
t WP
t CWD
t RCS
t DZC t DS
t DH
t OED
t DH
Din
2
t OED
t DZO
Din
N
t OED
t DZO
t OEH
t OEH
*#
t OEH
t DH
du
t DZO
t RWL
t WP
t DZC t DS
Din
1
t CWL
t CWD
t WP
t DZC t DS
Din
t CPW
t AWD
ro
t RCS
t CWL
t AWD
t RCS
WE
Column N
t CPW
t AWD
t CWD
t ASC
t CAH
OE
t OHO
t OEA
t CAC
t OHO
t OEA
t CAC
t AA
t AA
t CPA
t RAC
t AA
t CPA
t OEZ
t CLZ
t CLZ
ct
t OEZ
t CLZ
t OHO
t OEA
t CAC
t OEZ
High-Z
Dout
Dout 1
Dout 2
Data Sheet E0154H10
26
Dout N
EO
HM5118165 Series
EDO Page Mode Mix Cycle (1)
t RP
t RASP
RAS
tT
t CAS
t CAS
tCAS
tCAS
t CSH
LP
UCAS
LCAS
t CRP
t CP
t CP
t CP
tRSH
t RCD
t WCS
WE
t ASC
tRAH
tASR
Address
Row
t DS
Column 1
tCPW
tAWD
t ASC t CAH
tASC t CAH
Column 2
Column 3
tASC
t RAL
t CAH
Column 4
t CAL
tRDD
tCDD
t CAL
t DH
Din 1
tWP
t DH
t DS
High-Z
Din 3
tOED
tWED
OE
tCAH
t RRH
t RCH
t RCS
t RCS
ro
Din
t WCH
tCPA
tAA
tOEA
Dout
tAA
tAA
t OEZ
t DOH
Dout 2
tCAC t OHO
Dout 3
tOEZ
tCAC
du
tCAC
tOFR
tWEZ
tCPA
tCPA
tOHO
tOEA
tOFF
tOH
Dout 4
ct
Data Sheet E0154H10
27
EO
HM5118165 Series
EDO Page Mode Mix Cycle (2)
t RP
t RNCD
t RASP
RAS
tT
t CAS
t RCD
t ASC
tRAH
tASR
Address
Row
tCAS
t RCH
tCAH
Column 1
tWCS t WCH
t ASC t CAH
Column 2
Column 3
t CAH
tASC
Column 4
t CAL
t DS
t DH
tRDD
tCDD
t DH
Din 2
tOED
t RAL
t CAL
ro
High-Z
Din
t RRH
t RCH
tWP
tCPW
t ASC t CAH
t DS
tRSH
t RCS
t RCS
t CAL
Din 3
tOED
tCOP
tWED
tCOL
OE
tAA
tOEZ
t OEA
tCPA
tAA
tCAC
tRAC
t OHO
Dout 1
tOFR
tWEZ
tCPA
tOEZ
du
tOEA
tCAC
Dout
tCAS
t RCHR
t RCS
WE
t CAS
t CRP
t CP
t CP
t CP
LP
UCAS
LCAS
t CSH
t OHO
Dout 3
tAA
tCAC
tOEZ
tOEA
tOFF
tOH
tOHO
Dout 4
ct
Data Sheet E0154H10
28
EO
HM5118165 Series
Self Refresh Cycle (L-version)* 28, 29, 30, 31
t RASS
t RP
t RPS
RAS
tT
t CRP
t CSR
t CHS
#$%*+
UCAS
LP
,
t RPC
t CP
LCAS
t OFR
t OFF
Dout
High-Z
ct
du
ro
Data Sheet E0154H10
29
EO
HM5118165 Series
Package Dimensions
HM5118165J/LJ Series (CP-42D)
Unit: mm
27.06
27.43 Max
0.43 ± 0.10
0.41 ± 0.08
1.27
0.10
Dimension including the plating thickness
Base material dimension
10.16 ± 0.13
11.18 ± 0.13
2.50 ± 0.12
1.30 Max
21
0.80 +0.25
–0.17
0.74
3.50 ± 0.26
1
22
9.40 ± 0.25
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-42D
Conforms
—
1.75 g
ct
du
ro
LP
42
Data Sheet E0154H10
30
EO
HM5118165 Series
HM5118165TT/LTT Series (TTP-50/44DC)
20.95
21.35 Max
40 36
26
LP
10.16
50
Unit: mm
11 15
25
0.10
Dimension including the plating thickness
Base material dimension
0.145 ± 0.05
0.125 ± 0.04
3.20
11.76 ± 0.20
0° – 5°
0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TTP-50/44DC
Conforms
—
0.50 g
ct
du
ro
1.20 Max
0.27 ± 0.07
0.13 M
0.25 ± 0.05
1.15 Max
0.80
0.68
0.80
0.13 ± 0.05
1
Data Sheet E0154H10
31
EO
HM5118165 Series
Cautions
ct
du
ro
LP
1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any
third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s
rights, including intellectual property rights, in connection with use of the information contained in this
document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, contact Elpida Memory, Inc. before using the product in an application that demands especially
high quality and reliability or where its failure or malfunction may directly threaten human life or cause
risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc.
particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage
when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally
foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as
fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury,
fire or other consequential damage due to operation of the Elpida Memory, Inc. product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Elpida Memory, Inc..
7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc.
semiconductor products.
Data Sheet E0154H10
32
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