< C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Unit : millimeters 21.0 +/-0.3 2MIN (1) (2) 12.9 +/-0.2 Class A operation Internally matched to 50(ohm) system High output power P1dB=8W (TYP.) @f=3.4 – 3.6GHz High power gain GLP=12.5dB (TYP.) @f=3.4 – 3.6GHz High power added efficiency P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L 0.6 +/-0.15 (2) 2MIN R-1.6 11.3 FEATURES (3) 10.7 17.0 +/-0.2 QUALITY 0.1 12.0 0.2 IG 1.6 4.5 +/-0.4 item 01 : 3.4 – 3.6 GHz band power amplifier item 51 : 3.4 – 3.6 GHz band digital radio communication 2.6 +/-0.2 APPLICATION RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A RG=50ohm (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-8 Absolute maximum ratings Symbol (Ta=25C) Ratings Unit Gate to drain breakdown voltage -15 V VGSO Gate to source breakdown voltage -15 V ID Drain current 7.5 A IGR Reverse gate current -20 mA IGF Forward gate current 42 mA PT *1 Total power dissipation 42.8 W VGDO Parameter Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. *1 : Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. Unit Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - - 7.5 A gm Transconductance VDS=3V,ID=2.2A - 2 - S VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=20mA - - -4.5 V Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A 38 39.5 - dBm GLP Linear Power Gain f=3.4 – 3.6GHz 10 12.5 - dB ID Drain current - - 3 A P.A.E. Power added efficiency - 32 - % IM3 *2 3rd order IM distortion -42 -45 - dBc Rth(ch-c) *3 Thermal resistance - 3 3.5 C/W delta Vf method *2 :item -51 ,2 tone test,Po=28dBm Single Carrier Level ,f=3.6GHz,delta f=5MHz *3 :Channel-case Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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