PD - 96345
AUTOMOTIVE GRADE
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
Features
l
l
l
l
l
l
l
l
HEXFET® Power MOSFET
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
55V
RDS(on) typ.
max.
8.0mΩ
ID (Silicon Limited)
86Al
ID (Package Limited)
75A
G
S
6.5mΩ
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
AUIRL3705Z
Absolute Maximum Ratings
D2 Pak
AUIRL3705ZS
TO-262
AUIRL3705ZL
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
c
c
h
g
i
Thermal Resistance
Parameter
k
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount)
i
i
j
d
Units
l
86
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Typ.
Max.
–––
1.14
0.50
–––
–––
62
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/09/10
AUIRL3705Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
55
–––
–––
–––
–––
1.0
150
–––
–––
–––
–––
–––
0.055
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
11
12
3.0
–––
20
250
200
-200
V
V/°C
mΩ
V
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 52A
VGS = 5.0V, ID = 43A
VGS = 4.5V, ID = 30A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 52A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
e
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
40
12
21
17
240
26
83
60
–––
–––
–––
–––
–––
–––
–––
4.5
–––
–––
7.5
–––
–––
–––
2880
420
–––
–––
–––
–––
–––
–––
220
1500
330
510
–––
–––
–––
–––
Min.
Typ.
Max.
nC
ns
nH
pF
ID = 43A
VDS = 44V
VGS = 5.0V
VDD = 28V
ID = 43A
RG = 4.3 Ω
VGS = 5.0V
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
D
G
S
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
–––
75
–––
–––
340
–––
–––
–––
–––
16
7.4
1.3
24
11
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 52A, VGS = 0V
TJ = 25°C, IF = 43A, VDD = 28V
di/dt = 100A/µs
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.09mH
RG = 25Ω, IAS = 52A, VGS =10V. Part not recommended for use
above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
2
–––
Units
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
www.irf.com
AUIRL3705Z/S/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
3L-D2 PAK
Moisture Sensitivity Level
3L-TO-262
N/A
3L-TO-220
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
Class M4 (425V)
( per AEC-Q101-002)
Class H1C (2000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRL3705Z/S/L
1000
1000
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
1
2.8V
0.1
BOTTOM
10
2.8V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
1
1
10
100
0.1
1000
10
100
1000
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
120
Gfs, Forward Transconductance (S)
1000
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
100
10
TJ = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
T J = 25°C
100
80
60
TJ = 175°C
40
20
V DS = 8.0V
0
16
0
20
40
60
80
100
120
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com
AUIRL3705Z/S/L
100000
6.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 52A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance(pF)
C oss = Cds + C gd
10000
Ciss
1000
Coss
Crss
100
VDS= 44V
VDS= 28V
5.0
VDS= 11V
4.0
3.0
2.0
1.0
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
10
20
30
40
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 175°C
100.00
100
T J = 25°C
10.00
100µsec
10
VGS = 0V
10msec
1
1.00
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
2.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRL3705Z/S/L
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
90
Limited By Package
ID, Drain Current (A)
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
ID = 43A
VGS = 5.0V
1.5
1.0
0.5
175
-60 -40 -20 0
T C , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
τJ
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
τ
Ri (°C/W)
0.5413
τi (sec)
0.000384
0.5985
0.002778
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
AUIRL3705Z/S/L
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
500
ID
TOP
5.7A
8.5A
BOTTOM 52A
400
300
200
100
0
25
V(BR)DSS
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
3.0
10
V
Q
G
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25
DUT
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
L
0
0
VCC
Fig 14. Threshold Voltage vs. Temperature
1K
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
AUIRL3705Z/S/L
100
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.05
0.10
1
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
150
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 52A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
www.irf.com
AUIRL3705Z/S/L
D.U.T
Driver Gate Drive
P.W.
+
-
-
-
Reverse
Recovery
Current
+
RG
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
D.U.T. ISD Waveform
+
D=
VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
Power MOSFETs
V DS
VGS
RD
D.U.T.
RG
+
- V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRL3705Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUL3705Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRL3705Z/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUL3705ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRL3705Z/S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUL3705ZL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
www.irf.com
AUIRL3705Z/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
13
AUIRL3705Z/S/L
Ordering Information
Base part
Package Type
AUIRL3705Z
AUIRL3705ZL
TO-220
TO-262
AUIRL3705ZS
D2Pak
14
Standard Pack
Form
Tube
Tube
Complete Part Number
Quantity
50
50
AUIRL3705Z
AUIRL3705ZL
Tube
Tape and Reel Left
Tape and Reel Right
50
800
800
AUIRL3705ZS
AUIRL3705ZSTRL
AUIRL3705ZSTRR
www.irf.com
AUIRL3705Z/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and
to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and
/ or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.
IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly
or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
15