MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10 Vdc IC 300 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous BASE 1 EMITTER 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1x M G G 1 1x M G = Device Code x = M for MMBTA13LT1G, SMMBTA13LT1G x = N for MMBTA14LT1G, SMMBTA14LT1G, T3G = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBTA13LT1G, SOT−23 SMMBTA13LT1G (Pb−Free) 3,000 / Tape & Reel MMBTA14LT1G, SOT−23 SMMBTA14LT1G (Pb−Free) 3,000 / Tape & Reel SMMBTA14LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: MMBTA13LT1/D MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 30 − − 100 − 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 MMBTA14, SMMBTA14 (IC = 100 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 MMBTA14, SMMBTA14 hFE Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE − 5000 10,000 − − 10,000 20,000 − − − 1.5 − 2.0 125 − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2 MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 50k 100k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure www.onsemi.com 3 500 1000 MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L SMALL−SIGNAL CHARACTERISTICS 20 |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 200k hFE, DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k -55°C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.4 V, VOLTAGE (VOLTS) 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 9. Collector Saturation Region 1.6 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 10 500 3.0 Figure 8. DC Current Gain 5.0 7.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) -55°C TO 25°C -3.0 25°C TO 125°C -4.0 qVB FOR VBE -5.0 -55°C TO 25°C -6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients www.onsemi.com 4 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) • RqJCTJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJATJ(pk) - TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L 300 200 1.0 ms TC = 25°C TA = 25°C 100 ms 1.0 s 100 70 50 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 13. Active Region Safe Operating Area FIGURE A tP PP PP t1 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data www.onsemi.com 5 1.0k 2.0k 5.0k 10k MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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