Schottky Barrier Diodes (SBD) MA4X746 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification + 0.2 2.8 − 0.3 + 0.25 0.4 − 0.05 2 + 0.1 3 Symbol Rating Unit VR 50 V Repetitive peak reverse voltage VRRM 50 V Non repetitive peak IFSM 1 A Reverse voltage (DC) forward Peak forward current Average forward current Single Double*1 Single 300 Double*1 Single + 0.1 0.16 − 0.06 0.4 ± 0.2 0.75 IFM 0 to 0.1 0.1 to 0.3 Parameter 0.6 − 0 0.2 0.8 + 0.2 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 2 current* + 0.1 1 0.5 0.95 0.95 + 0.2 2.9 − 0.05 • IF(AV) = 200 mA, and VR > 50 V is achieved • Allowing automatic insertion with the emboss taping • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rectification efficiency caused by its low forward-risevoltage (VF) 1.9 ± 0.2 0.5 R 4 + 0.1 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M3M mA Internal Connection 225 IF(AV) 200 Double*1 mA 4 1 3 2 150 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 50 V 200 µA Forward voltage (DC) VF1 IF = 30 mA 0.36 V VF2 IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 0.55 pF V Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz Bias Application Unit N-50BU Input Pulse Output Pulse 3. * : trr measuring instrument tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA4X746 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 105 0.5 Ta = 150°C IF = 200 mA 25°C 1 10−1 10−2 100 mA 0.3 0.2 30 mA 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) Ct VR 40 80 120 160 200 IR T a 104 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 20 15 10 0 0 10 20 30 40 50 Reverse voltage VR (V) 2 103 VR = 30 V 5V 102 10 5 60 1 −40 102 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 10 20 30 40 50 Reverse voltage VR (V) 105 25 100°C 1 0 Ambient temperature Ta (°C) 30 103 10 0.1 0 Reverse current IR (µA) 100°C 10 104 0.4 − 20°C Ta = 150°C Forward voltage VF (V) Forward current IF (mA) 102 200 60