MCC MBR3020W THRU MBR30100W omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features 30 Amp Schottky l High Surge Capacity l Low Power Loss, High Efficiency l High Current Capability, Low VF l Metal of silicon Rectifier, majority Carrier Conduction l Guard Ring For Transient Protection l Plastic Package Has UL Flammability Classification 94V-0 Barrier Rectifier 20 to 100 Volts Maximum Ratings TO-247 o E o l Operating Temperature: -55 C to +150 C l Storage Temperature: -55 C to +150 C o o C B Q U Maximum Maximum MCC Part Number Recurrent Peak RMS Voltage Reverse Voltage MBR3020W MBR3030W MBR3035W MBR3040W MBR3045W MBR3060W MBR3080W MBR30100W 20V 30V 35V 40V 45V 60V 80V 100V 14V 21V 24.5V 28V 31.5V 42V 56V 70V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 60V 80V 100V 4 L A R 1 3 2 PIN 1. PIN 2. PIN 3. PIN 4. P ANODE CATHODE ANODE CATHODE K H F J V D G Note: Drawings Are Not To Scale Electrical Characteristics @ 25 C Unless Otherwise Specified o DIMENSIONS Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR3020W-3045W MBR3060W MBR3080W-30100W Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance I F(AV) I FSM VF 30.0A 200A .63V .75V .84V T C=105 o C 8.3ms half sine DIM Cj 1.0mA 500pF NOTE MIN MIN A .803 .823 20.40 20.90 B .608 .628 15.44 15.95 C .185 .205 4.70 5.21 I FM =30.0A D .043 .051 1.09 1.30 T A = 2 5o C E .059 .064 1.50 1.63 F .071 .086 1.80 2.18 o TC = 2 5 C Measured at 1.0MHz, V R =4.0V .215 BSC 5.45 BSC H .101 .130 2.56 2.87 J .019 .027 0.48 0.68 K .613 .633 15.57 16.08 L .286 .295 7.26 7.50 P .122 .133 3.10 3.38 Q .138 .145 3.50 3.70 R .130 .150 3.30 3.80 U Pulse test: Pulse width 300 usec, duty cycle 2%. MM MAX G IR INCHES MIN V .209 .120 www.mccsemi.com BSC .134 5.30 3.05 BSC 3.40 •M •C •C • AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES MBR3020W thru MBR30100W FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 200 150 100 50 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10 TJ = 75 C 1.0 0.1 TJ = 25 C 10 MBR3020WT~ MBR3045W MBR3060W 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 0.01 0.1 0 20 40 60 80 100 140 120 0 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 0.5 0.6 0.7 0.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 NUMBER OF CYCLES AT 60Hz 4 10 100 REVERSE VOLTAGE , VOLTS www.mccsemi.com 0.9