DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V 4Ω @ VGS = 5V ID TA = +25°C 310mA SOT23 270mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.008487 grams (Approximate) Drain SOT23 D Gate Gate Protection Diode S G ESD PROTECTED TO 1kV Top View Pin Configuration Top View Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN65D8L-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www. www.diodes.com/products/packages.html. Marking Information MM6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 ~ ~ Feb 2 DMN65D8L Document number: DS35923 Rev. 3 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D January 2016 © Diodes Incorporated DMN65D8L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 310 240 ID mA 270 210 800 500 ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current (Note 5) Unit V V IDM IS mA mA mA Thermal Characteristics Characteristic Symbol (Note 6) (Note 5) (Note 6) (Note 5) (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Value 370 540 348 241 91 -55 to +150 PD RJA RJC TJ, TSTG Unit mW °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1.0 ±5 V µA µA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) Static Drain-Source On-Resistance RDS(ON) 1.2 80 2 2.5 290 0.8 2.0 3 4 1.2 V ms V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.115A VGS = 5V, ID = 0.115A VDS = 10V, ID = 0.115A VGS = 0V, IS = 115mA 22.0 3.2 2.0 79.9 0.87 0.43 0.11 0.11 2.7 2.8 12.6 7.3 pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 30V, ID = 150mA ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: gFS VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing . DMN65D8L Document number: DS35923 Rev. 3 - 2 2 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN65D8L 0.6 1 VDS = 5.0V )A ( T N E R R U 0.1 C N I A R D ,D I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 0.4 0.3 0.2 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.1 TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.01 5 0 2.4 4.5 2.2 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 5.0 4.0 3.5 3.0 VGS = 5V 2.5 2.0 VGS= 10V 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS , GATE-SOURCE VOLTAGE Figure 2. Typical Transfer Characteristics 2.0 VGS = 10 V ID = 115mA 1.8 1.6 VGS = 5V ID = 115mA 1.4 1.2 1.0 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT Figure 3. Typical On-Resistance vs. Drain Current and Temperature 0.4 50 0.6 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4. On-Resistance Variation with Temperature 2.0 5 VGS(th) , GATE THRESHOLD VOLTAGE (V) (TH), RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 4 3 VGS = 5V ID = 115mA 2 VGS = 10V ID = 115mA 1 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature DMN65D8L Document number: DS35923 Rev. 3 - 2 1.8 1.6 ID = 1mA 1.4 1.2 ℃ ID = 250礎 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation vs. Ambient Temperature 3 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN65D8L 1,000 1,000 )A n ( T N E R R 100 U C E G A K A E L N 10 I A R D ,S IDSS, DRAIN LEAKAGE CURRENT (A) IS, SOURCE CURRENT (V) 1 0.1 ℃ T A = 150癈 ℃ TA = 125癈 TA = 85癈 ℃ ℃ TA = 25癈 0.01 ℃ TA = -55癈 I 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 7. Diode Forward Voltage vs. Current TA = 150°C TA = 125°C TA = -55°C TA = 25°C TA= 85°C S D 1 0 10 20 30 40 50 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 8. Typical Drain-Source Leakage Current vs. Voltage 50 f = 1MHz CT, JUNCTION CAPACITANCE (pF) 45 40 35 30 25 Ciss 20 15 10 Coss 5 0 Crss 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance DMN65D8L Document number: DS35923 Rev. 3 - 2 25 4 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN65D8L Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT23 Y Z C X DMN65D8L Document number: DS35923 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN65D8L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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